Rmaeround 1 Finalppt
Rmaeround 1 Finalppt
Rmaeround 1 Finalppt
Transistors:
construction.working.biasing
BY: S2 GROUP
ROLL NO: 7 – DHANASHREE TAMKHANE
: 8 – TANISHKA PIMPLE (AGR)
: 9 – TANMAY WALKE (GR)
: 10- TANMAY YADAV
: 12- TANVI WALTHARE
GUIDED BY- MANISHA MORE MAM
INTRODUCTION
Materials which have a conductivity between conductors and insulators.
For example: silicon, germanium, or compounds such as gallium and aesenide.
HISTORY: In 1874, Karl Braun discovered and documented the first semiconductor diode effect. During the development
of semiconductor industry, silicon (Si), and germanium (Ge) are called the first generation of semiconductors. Gallium
arsenide (GaAs) and aluminum arsenide (GaSi) represent the second generation of semiconductors
Bipolar Junction Transistors: These transistors are commonly known as junction transistors. These were the first type of
transistors produced in 1947 by Bell Labs. Bipolar Junction Transistors are of two types:
NPN transistors
PNP transistors
TYPES OF SEMICONDUCTORS:
1.INTRINSIC SEMICONDUCTOR 2.EXTRINSIC SEMICONDUCTOR
a. n-type semiconductor
b. p-type semiconductor
TYPES OF SEMICONDUCTORS
Intrinsic semiconductors: Extrinsic semiconductors:
TYPES OF EXTRINSIC
SEMICONDUCTORS
N-TYPE P-TYPE
Bipolar Junction Transistor
A bipolar junction transistor is a single silicon component where electrons and holes are used as charge carriers. A
bipolar junction transistor lets a small current be injected at one of its terminals to control large amounts of current
flowing between the other two terminals. This makes the device capable of performing switching or amplification.
This bipolar PNP junction transistor is formed with three layers of semiconductor material, with two P-type regions
sandwiched between one N-type region.
Npn transistor
The NPN transistor features three terminals: emitter, base and collector.
This transistor features two diodes that are connected back to back. The diode seen
between the emitter-base terminal is referred to as the emitter-base diode. The diode
between collector and base terminal is known as collector-base diodes. The emitter is
moderately doped, the base is lightly doped, and the collector is comparatively more
doped.
Npn transistor working
When the emitter-base junction is forward biased, a small
voltage VBE is seen. Reverse bias voltage VCE. Due to the
forward bias, the majority charge carriers in the emitter are
repelled towards the base. The electron-hole recombination
is very small in the base region since the base is lightly
doped. Most of the electrons cross into the collector region.
When the emitter is forward biased, electrons move
towards the base and create the emitter current IE. Here,
the majority charge carriers in the P-type material combine
with the holes.
Since the base of the NPN transistor is lightly doped, it lets only a few electrons to combine
and the remaining current is known as the base current IB. When the collector region is
reverse biased, it applies a greater force on the electrons reaching the collector junction and
hence attracts the electrons at the collector.
PNP Transistor
3.Current flows from collector to emitter terminal 3.Current flows from emitter to collector
terminal
4.The current flow from collector is generated 4.The current flow from emitter to collector is
by keeping a positive voltage there generated at emitter by keeping a positive
voltage there
5.Majority charge carriers are electrons 5.Majority charge carriers are holes
6.Positive voltage is connected to collector 6.Positive voltage is connected to emitter
terminal terminal
7.It switches ON with increase in current in 7.It switches ON when there is no current flow
base terminal at the base terminal
8.When current is reduced in base,transistor 8.When current is present at base of PNP
doesn’t function across the collector terminal transistor, then the transistor switches OFF
and switches OFF
Advantages and Disadvantages of using a NPN
Transistor:
Advantages:
• Small in size.
• Can work in low voltage.
• Very cheap.
• Low output impedance.
• Long lasting.
• Spontaneous actions.
Disadvantages:
• High Temperature sensitivity.
• Produce low energy and power.
• Can get damaged during a thermal
runaway.
• Cannot be operated in high frequencies
Advantages and Disadvantages of using a PNP
Transistor:
Advantages of PNP Transistor
•Small in size and could be utilized as a part of IC
design.
•Comparatively cheap, long-lasting and simpler
circuit.
•Spontaneous actions available
•Low supply voltage requirement and less output
impedence.
•Produce less noise than NPN Transistors