Mosfet
Mosfet
Mosfet
ECE249
Basic Electrical & Electronics
Engineering
Unit-
MOSFET
IV
1
Outline
• Basics
• Construction
• Principal of operation
• Important Terminologies, Configurations
• Characteristics
• BJT Vs MOSFET
• Advantages, Applications
2
M OSFE
• MOSFET – Metal Oxide
T Field Effect Transistor
• Designed to over come the shortcomings of FET (Field
Effect Transistor like slow operation, high drain resistance,
moderate input impedance).
• Metal Oxide Silicon Field Effect Transistors commonly
known as MOSFETs are electronic devices used to switch
or amplify voltages in circuits. It is a voltage controlled
device and is constructed by three terminals. The
terminals of MOSFET are named as follows: Source, Gate
and Drain 3
MOSFET Construction N - Channel
4
Cont
• A thin layer of Silicon dioxide (SiO2) is grown over the
…
entire surface and holes are made to draw ohmic contacts
for drain and source terminals.
• A conducting layer of aluminum is laid over the entire
channel, upon this SiO2 layer from source to drain which
constitutes the gate. The SiO2 substrate is connected to
the common or ground terminals.
• Because of its construction, the MOSFET has a very less
chip area than BJT, which is 5% of the occupancy when
compared to bipolar junction transistor. This device can be
operated in modes. 5
Cont… P-Channel
6
Circuit Symbols – N
Channel
7
Circuit Symbols – P
Channel
8
MOSFET Classification
9
Enhancement Mode
• Default – No gate voltage - No channel conductivity
• When there is no voltage across the gate terminal, then
the device does not conduct. When there is the maximum
voltage across the gate terminal, then the device shows
enhanced conductivity.
10
Depletion Mode
• Default: No Voltage to Gate – Maximum Conductivity
• When there is no voltage across the gate terminal, the
channel shows maximum conductance.
• When the voltage across the gate terminal is either
positive or negative, then the channel conductivity
decreases.
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Principle of Operation – Depletion
M ode
12
Cont
• No PN junction …instead there
like FET, is an insulation
layer
• Current conduction is due to the presence of diffused
channel
• Sio2 & Al metal contact forms, a capacitor
• NMOS in Depletion Mode – Biasing Requirement – Gate
to –Ve terminal & Drain is connected to the +Ve terminal
of gate voltage.
13
Cont
• When no voltage is … between
applied gate and source,
some current flows due to the voltage between drain and
source.
• Let some negative voltage is applied at VGG.
• Then the minority carriers i.e. holes, get attracted and
settles near SiO2 layer. But the majority carriers, i.e.,
electrons get repelled.
14
Cont
• With some amount of …
negative potential at VGG a certain
amount of drain current ID flows through source to drain.
When this negative potential is further increased, the
electrons get depleted and the current ID decreases.
• Hence the more negative the applied VGG, the lesser the
value of drain current ID will be.
• The channel nearer to drain gets more depleted than at
source as in FET and the current flow decreases due to
this effect. Hence it is called as depletion mode MOSFET.
15
Drain Characteristics
16
Transfer Characteristics
17
Principle of Operation – Enhancement
M ode
18
BJT Vs
M OSFET
19
Advantages & Disadvantages
• Advantages of MOSFET
• MOSFETs operate at greater efficiency at lower voltages.
• Absence of gate current results in high input impedance
producing high switching speed.
• Disadvantages of MOSFET
• MOSFETs are vulnerable to damage by electrostatic
charges due to the thin oxide layer.
• Overload voltages make MOSFETs unstable.
20
Applications of
• Radio Mfrequency
OSFETapplications use MOSFET
amplifiers extensively.
• MOSFET behaves as a passive circuit element.
• Power MOSFETs can be used to regulate DC motors.
• MOSFETs are used in the design of the chopper circuit.
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