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    Bipolar Junction Transistor (BJT)

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    Muhammad Ameen
    The document describes the bipolar junction transistor (BJT). It discusses the construction and operation of the BJT, including its three regions (emitter, base, collector), two pn junctions, and use of both holes and electrons as carriers. It explains forward biasing of the base-emitter junction and reverse biasing of the base-collector junction for amplification. Key parameters like current gain (β), voltages, and operating regions (cutoff, active, saturation) are defined. The BJT is described functioning as both an amplifier and a switch depending on bias conditions.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd

    Bipolar Junction Transistor (BJT)

    Uploaded by

    Muhammad Ameen
    139 views36 pages
    The document describes the bipolar junction transistor (BJT). It discusses the construction and operation of the BJT, including its three regions (emitter, base, collector), two pn junctions, and use of both holes and electrons as carriers. It explains forward biasing of the base-emitter junction and reverse biasing of the base-collector junction for amplification. Key parameters like current gain (β), voltages, and operating regions (cutoff, active, saturation) are defined. The BJT is described functioning as both an amplifier and a switch depending on bias conditions.

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    For Basic Electronics

    Original Title

    BIPOLAR JUNCTION TRANSISTOR (BJT)

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    The document describes the bipolar junction transistor (BJT). It discusses the construction and operation of the BJT, including its three regions (emitter, base, collector), two pn junctions, and use of both holes and electrons as carriers. It explains forward biasing of the base-emitter junction and reverse biasing of the base-collector junction for amplification. Key parameters like current gain (β), voltages, and operating regions (cutoff, active, saturation) are defined. The BJT is described functioning as both an amplifier and a switch depending on bias conditions.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    139 views36 pages

    Bipolar Junction Transistor (BJT)

    Uploaded by

    Muhammad Ameen
    The document describes the bipolar junction transistor (BJT). It discusses the construction and operation of the BJT, including its three regions (emitter, base, collector), two pn junctions, and use of both holes and electrons as carriers. It explains forward biasing of the base-emitter junction and reverse biasing of the base-collector junction for amplification. Key parameters like current gain (β), voltages, and operating regions (cutoff, active, saturation) are defined. The BJT is described functioning as both an amplifier and a switch depending on bias conditions.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 36

    BIPOLAR JUNCTION

    TRANSISTOR (BJT)
    Introduction
    • The BJT is constructed with three doped
    semiconductor regions separated by two pn
    junctions, as shown
    • The three regions are called emitter, base,
    and collector.
    • The term bipolar refers to the use of both holes and
    electrons as current carriers in the transistor structure.

    • The pn junction joining the base region and the


    emitter region is called the base-emitter junction

    • The pn junction joining the base region and the


    collector region is called the base-collector junction

    • The base region is lightly doped and very thin


    compared to the heavily doped emitter and the
    moderately doped collector regions
    Schematic Symbol of BJT
    Basic BJT Operation
    • In order for a BJT to operate properly as an amplifier,
    the two pn junctions must be correctly biased with
    external dc voltages.

    • Figure(next slide) shows a bias arrangement for both


    npn and pnp BJTs for operation as an amplifier.

    • In both cases the base-emitter (BE) junction is


    forward-biased and the base-collector (BC) junction is
    reverse-biased. This condition is called forward-
    reverse bias.
    • The heavily doped n-type emitter region has a very high
    density of conduction-band (free) electrons.

    • These free electrons easily diffuse through the forward


    based BE junction into the lightly doped and very thin p-
    type base region

    • The base has a low density of holes

    • A small percentage of the total number of free electrons


    injected into the base region recombine with holes and
    move as valence electrons through the base region and
    into the emitter region as hole current
    • When the electrons that have recombined with holes as valence electrons
    leave the crystalline structure of the base, they become free electrons in the
    metallic base lead and produce the external base current.

    • Most of the free electrons that have entered the base do not recombine with
    holes because the base is very thin.

    • As the free electrons move toward the reverse-biased BC junction, they are
    swept across into the collector region by the attraction of the positive collector
    supply voltage

    • The free electrons move through the collector region, into the external circuit,
    and then return into the emitter region along with the base current, as shown
    in the figure(next slide )

    • The emitter current is slightly greater than the collector current because of the
    small base current that splits off from the total current injected into the base
    region from the emitter
    Transistor Currents
    • The directions of the currents in an npn
    transistor and its schematic symbol are as
    shown in Figure
    BJT CHARACTERISTICS AND PARAMETERS

    • When a transistor is connected to dc bias


    voltages, as shown in Figure for both npn and
    pnp typess, VBB forward-biases the base-
    emitter junction, and VCC reverse-biases the
    base-collector junction
    DC Beta (DC)and DC Alpha (αDC)
    • The dc current gain of a transistor is the ratio of
    the dc collector current (IC) to the dc base current
    (IB) and is designated dc beta ().

    • Typical values of βDC range from less than 20 to 200


    or higher. βDC is usually designated as an equivalent
    hybrid (h) parameter, hFE, on transistor datasheets.
    • The ratio of the dc collector current (IC) to the
    dc emitter current (IE) is the dc alpha (αDC).
    • The alpha is a less-used parameter than beta
    in transistor circuits.

    • Typically, values of αDC range from 0.95 to 0.99


    or greater, but αDC is always less than 1. The
    reason is that IC is always slightly less than IE by
    the amount of IB
    Relation Ship of & β(derivation on Board )

    IE=IC+IB ……………(i)
    IE= βIB+IB
    IE=(β+1)IB …………(ii)
    As we know α=IC/IE & β=IC/IB , so Eq(iii) becomes by putting value
    of IB
    Example: Determine the dc current gain βDC and the emitter
    current IE for a transistor where IB =50 µA and IC =3.65 mA.
    Transistor DC Model
    • The input circuit is a forward-biased diode through which there is
    base current.

    • The output circuit is a dependent current source (diamond-shaped


    element) with a value that is dependent on the base current, IB, and
    equal to βDCIB
    BJT Circuit Analysis
    • Consider the basic transistor bias circuit configuration in Figure

    • Three transistor dc currents and three dc voltages can be


    identified

    • IB: dc base current


    • IE: dc emitter current
    • IC: dc collector current
    • VBE: dc voltage at base with respect to emitter
    • VCB: dc voltage at collector with respect to base
    • VCE: dc voltage at collector with respect to emitter
    • The base-bias voltage source, VBB, forward-
    biases the base-emitter junction, and the
    collector-bias voltage source, VCC, reverse-
    biases the base-collector junction.

    • When the base-emitter junction is forward-


    biased, it is like a forward-biased diode and has
    a nominal forward voltage drop of

    • Since the emitter is at ground (0 V), by


    Kirchhoff’s voltage law, the voltage across RB is
    Example: Determine IB, IC, IE, VBE, VCE, and
    VCB for the figure. The transistor has a βDC =
    150
    Transistor i-v characteristics
    Transistor Voltages
    Three different types of voltages are involved in
    the description of transistors and transistor
    circuits.
    • Transistor supply voltages: VCC ,VBB
    • Transistor terminal voltages: VB ,VC , VE
    • Voltages across transistor junctions: VBE ,VCE , VCB
    All of these voltages and their polarities are shown
    in the next slide
    • The most important characteristic of the BJT is
    the plot of the collector current(IC) , versus the
    collector-emitter voltage(VCE) , for various
    values of the base current(IB) as shown on the
    circuit
    • Cutoff region
    ₋ Base-emitter junction is reverse biased. No current flow
    ₋ VCE=VCC, IB=0
    • Saturation region
    ₋ Base-emitter junction forward biased
    ₋ Collector-base junction is forward biased
    ₋ IC reaches a maximum which is independent of IB and β.
    ₋ No control.
    ₋ VCE(sat)=VCC-IC(sat)RC
    ₋ VCE(sat) is normally assumed 0.2V
    ₋ VCE < VBE
    • Active region
    ₋ Base-emitter junction forward biased
    ₋ Collector-base junction Reverse biased
    ₋ Control, IC = βIB (as can be seen from Figure
    there is a small slope of IC with VCE
    ₋ VBE <VCE<VCC
    • Breakdown region
    ⁻ IC and VCE exceed specifications damage to the
    transistor
    DC Load Line
    • Figure shows a dc load line
    connecting the cutoff point and the
    saturation point.

    • The bottom of the load line is at


    ideal cutoff where IC =0 and VCE
    =VCC

    • The top of the load line is at


    saturation where IC =IC(sat) and VCE
    =VCE(sat).

    • In between cutoff and saturation


    along the load line is the active
    region of the transistor’s operation
    Determine whether or not the transistor in saturation.
    Assume VCE(sat) = 0.2 V.
    THE BJT AS A SWITCH
    • In part (a), the transistor is in the cutoff region because
    the base-emitter junction is not forward-biased. In this
    condition, there is, ideally, an open between collector
    and emitter, as indicated by the switch equivalent
    • In part (b), the transistor is in the saturation region
    because the base emitter junction and the base-
    collector junction are forward-biased and the base
    current is made large enough to cause the collector
    current to reach its saturation value. In this
    condition, there is, ideally, a short between collector
    and emitter, as indicated by the switch equivalent
    Conditions in Cutoff

    Conditions in Saturation
    Example:
    (a)For the transistor circuit in Figure, what is VCE
    when VIN =0 V?
    (b) What minimum value of IB is required to
    saturate this transistor if βDC is 200? Neglect
    VCE(sat).
    (c)Calculate the maximum value of RB when VIN
    =5V
    Solution
    THE BJT AS AN AMPLIFIER
    • Amplification is the process of linearly increasing the
    amplitude of an electrical signal and is one of the
    major properties of a transistor.

    • BJT exhibits current gain (called β). When a BJT is


    biased in the active (or linear) region

    • BE junction has a low resistance due to forward bias


    and the BC junction has a high resistance due to
    reverse bias

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