Unit 1 - DSD
Unit 1 - DSD
• Number System -
Code using symbols that refer to
a number of items.
• Binary System -
Uses two symbols (base 2 system)
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT 3
PLACE VALUE
• Numeric value of symbols in different positions.
• Example - Place value in binary system:
Place Value 8s 4s 2s 1s
Number 1 1 0 0
RESULT: Binary 1100 = decimal 8 + 4 + 0 + 0 = decimal 12
IFETCE/ECE /II YEAR/III
4
SEM/19UECPC301/DSD/Unit 1/PPT
BINARY TO DECIMAL
CONVERSION
Binary 1 1 0 0 1 1
Decimal 32 + 16 + 0 + 0 + 2 + 1 = 51
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT 5
DECIMAL TO BINARY
CONVERSION
Divide by 2 Process
Decimal # 13 ÷ 2 = 6 remainder 1
6 ÷ 2 = 3 remainder 0
3 ÷ 2 = 1 remainder 1
1 ÷ 2 = 0 remainder 1
1
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT
1 0 1
6
HEXADECIMAL NUMBER SYSTEM
Uses 16 symbols -Base 16 System
0-9, A, B, C, D, E, F
Hexadecimal E A
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT 8
DECIMAL TO HEXADECIMAL
CONVERSION
Divide by 16 Process
Decimal # 47 ÷ 16 = 2 remainder 15
2 ÷ 16 = 0 remainder 2
2 F
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT 9
HEXADECIMAL TO DECIMAL
CONVERSION
Convert hexadecimal number 2DB
to a decimal number
256s 16s 1s
Place Value
2 D B
Hexadecimal
Assume A, B, and C are logical states that can have the values 0 (false) and 1
(true).
A B=A+B
Step 1: Change all ORs to ANDs and all ANDs to ORs. A B=Y
Literals
F = (X’+Y+Z)(X’+Y+Z’)(X’+Y’+Z’)
= M4M5M7
= ΠM(4,5,7)
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT 38
• f1(a,b,c) = ∑ m(1,2,4,6), where ∑ indicates that this is a sum-of-
products form, and m(1,2,4,6) indicates that the minterms to
be included are m1, m2, m4, and m6.
F = A’B’C+A’BC’+AB’C’
= Σm(1,2,4)
• F= (A+B+C’)(A+B+C)(A’+B’+C)(A’+B’+C’)
= ΠM(0,2,6,7)
• Coressponding K-map
• Corresponding K-Map
• In Loop 1 the variable A has both logic 0 and logic 1 values in the same loop. B
has a value of 1. Hence minterm equation is: F = B.
• In Loop 2 Variable B has both logic 0 and 1 values in the same loop. A = 1,
hence minterm equation is: F = A.
• The overall Boolean expression for F is therefore: F= A + B
• In Loop 1 ,C has both logic 0 and logic 1 values in the same loop. A has a
value of 0 and B has a logic value of 1. Hence minterm equation is: F = A ‘B
• In Loop 2 ,the same but A = 1 and B = 0, hence minterm eqn is: F = AB’ .
• In Loop 3 the two variables A and B both have logic 0 and logic 1 values in
the same loop. C has a value of 1. Hence minterm equation is: F = C .
• The overall Boolean expression for F is therefore F = A’B+AB’+C
• In Loop 2 the two variables B and C both have logic 0 and logic 1 values in the same
loop. A has a value of 1 and D has a value of 0. Hence minterm equation is: F =AD’ .
• In Loop 3 the variable D has logic 0 and logic 1 values in the same loop. A and B both
have a value of 0 and C has a value of 1. Hence minterm equation is: F =A’B’C .
• In Loop 4 the two variables B and C both have logic 0 and logic 1 values in the same
loop. A has a value of 0 and D has a value of 1. Hence minterm equation is: F = A’D.
• In Loop 5 the variable C has logic 0 and logic 1 values in the same loop. A and D both
have s a value of 1 and B has a value of 0. Hence minterm equation is: F = ADB’.
• The overall Boolean expression for F is therefore: F= BC’ + AD’+ A’B’C + A’D+ ADB’
m5 0101 4 0100
m6 0110 8 1000
m8 1000 5 0101
m9 1001 6 0110
m10 1010 9 1001
m13 1101 10 1010
dm0 0000 7 0111
dm7 0111 13 1101
dm15 1111 15 1111
Inverter or
NOT gate
All NOR input pins connect to the input signal A gives an output A’.
An AND gate can be replaced by NOR gates as shown in the figure (The
AND gate is replaced by a NOR gate with all its inputs complemented by
NOR gate inverters)
The figure shows in which a NAND gate can be used as an inverter (NOT gate).
All NAND input pins connect to the input signal A gives an output A’.
An AND gate can be replaced by NAND gates as shown in the figure (The AND is
replaced by a NAND gate with its output complemented by a NAND gate
inverter).
An OR gate can be replaced by NAND gates as shown in the figure (The OR gate is
replaced by a NAND gate with all its inputs complemented by NAND gate inverters).
Advantages:
* Resistor-Transistor gates are not very
expensive
•They are very simple to construct.
Drawback
They draw a great amount of current from the
power supply. They are used in slower
applications, but cannot be used in today’s
computers as they cannot switch at high
speeds.
Application:
RTL gates can be used as amplifiers as well to
amplify small signals. They can also be used
as an interface between digital and linear
circuits.
Advantages
* The main advantage of TTL IC’s is that they are compatible with other
IC’s.
* It has high speed of operation.
* Its smaller size yields more function on an IC.
* It has low output impedance which improves the fan out capability.
* It has good noise immunity, in worst case it is 0.4V and typically it
touches 1V.
•It is less expensive.
Disadvantages
* It generates switching transients, which can be eliminated by the use of
bypass capacitors.
* Wired output capability is not possible except with low level and open
collector IC’s.
Advantages
* Low cost. Simplicity of design.
* Low heat dissipation.
* Superior fan-out and Wide logic swings.
•Good noise margin performance and Wide-range operation.
Disadvantages
* Slower than Bipolar digital ICs such as TTL devices.
* Careful handling for protects from static discharges is needed.
* Transient voltages can damage the oxide layer in the chip.
Resistor-Transistor
Logic (RTL)
• replace diode switch
with a transistor switch
• can be cascaded =
• large power draw
IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit 1/PPT 84
was…
Diode-Transistor Logic (DTL)
• essentially diode logic with transistor amplification
• reduced power consumption
• faster than RTL
I OH I OL
DC fanout = min( , )
I IH I IL
TPD,HL TPD,LH
VNH
Noise margin:
VNL VN = min(VNH,VNL)
Distinct features
• Multi-emitter transistors
• Totem-pole transistor
arrangement
• Open LTspice example:
2-input
TTL NAND… IFETCE/ECE /II YEAR/III SEM/19UECPC301/DSD/Unit NAND
1/PPT 91
TTL evolution
Schottky series (74LS00) TTL
• A major slowdown factor in BJTs is due to transistors
going in/out of saturation
• Shottky diode has a lower forward bias (0.25V)
• When BC junction would become forward biased, the
Schottky diode bypasses the current preventing the
transistor from going into saturation