2v. Transistor Presentation Eet

Electronic Devices and Circuits
TRANSISTOR CIRCUITS
c. kawerawera
ELECTRICAL AND ELECTRONICS

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TECHNOLOGY
TRANSISTORS
• There are two basic types of transistors:
1. The bipolar junction transistors (BJT)
NPN and PNP
2. The less unipolar or field effect
transistor {FET}. The Junction FET (JFET)
The Metal oxide semiconductor FET
(MOSFET) divided into the Depletion type
and the Enhancement type.
Transistors are used as current, voltage
and power amplifiers and as high speed
switches.
•
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2
BIPOLAR JUNCTION TRANSISTORS (BJT)
CONSTRUCTION AND CHARACTERISTICS

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The transistor is a three-layer semiconductor device consisting of either
two n- and one p-type layers of material or two p- and one n-type layers of
•
material.
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CONSTRUCTION
• The emitter layer is heavily doped, the base
lightly doped, and the collector only lightly
doped.
• The outer layers have widths much greater

than the sandwiched p- or n-type material.
• For the transistors shown, the ratio of the

total width to that of the center layer is
0.150/0.001 = 150:1.
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Operation as an amplifier
For operation as an amplifier in the active region the base-emitter
junction is forward biased and the base-collector junction is
reverse biased.
We will concentrate on common emitter configuration. This
configuration has both current and voltage gain.
•
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Transistor Characteristic
Input characteristic
•
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Transistor Characteristic
Output characteristic
• ELECTRICAL AND ELECTRONICS

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TRANSFER CHARACTERISTIC

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TRANSISTOR DATA
Transistors are identified by one of several codes. In American system they start
with 2N followed by a number e.g. 2N 3053. In continental system the first letter
gives the semiconductor material ( A for germanium and B for silicon ) and the
second letter gives the use ( C for audio frequency amplifier, F for radio frequency
amplifier ). Some manufactures have their own code.

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Transistor terminal identification

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Checking NPN Transistor
PNP leads are reversed

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DC biasing - Transistor Characteristic
Output characteristic

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DC Biasing—BJTs
The transistor operating in the ACTIVE region
Basic transistor relationships

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FIXED-BIAS CIRCUIT
•
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Fixed bias load line
•
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Effect of lower values of VCC on the load line and Q-
point.

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Given the load line of Figure below and the defined Q-point, determine the
required values of VCC, RC, and RB for a fixed-bias configuration.

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Thermal Runaway in fixed bias configuration
This regenerative action is called Thermal runaway which results in

poor performance in this configuration

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Fixed bias configuration

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THE END
FIXED BIAS CONFIGURATION
IMPROVED CIRCUIT
EMITTER STABILIZED BIAS CONFIGURATION

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Emitter stabilized bias configuration
•
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Load line for the emitter-bias configuration
•
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•
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Thermal stability

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DC BIAS WITH VOLTAGE FEEDBACK
AND
VOLTAGE-DIVIDER BIAS CONFIGURATION
•
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DC BIAS WITH VOLTAGE FEEDBACK
•
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•
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VOLTAGE-DIVIDER BIAS CONFIGURATION
•
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EXACT ANALYSIS
Redrawing the input side of the network and analysing
using Thevenin Theorem

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Inserting and analysing the Thévenin equivalent
circuit
•
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Determine the dc bias voltage VCE and the current IC for the
voltage-divider

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Further Benefits of Voltage divider bias
configuration
• Apart from the benefits of previous bias

configuration of ensuring the overall
stability of IC, any increase or decrease of
collector current results in VE increasing
or decreasing thus decreasing or
increasing VBE since VB is constant. This
results in the decrease or increase of IB
resulting in the stability of IC.

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Approximate Analysis
Partial-bias circuit for calculating the approximate base voltage VB.
•
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1. Determine the dc bias voltage VCE and the current
IC for the voltage-divider using approximate method
2. Repeat with β = 70 and comment on the results

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•
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The results clearly show the relative
insensitivity of the circuit to the change
in .

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THE END
BJT TRANSISTOR BIASING
•
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Determine VC and VB for the network

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THE END
BJT TRANSISTOR BIASING
•
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Common Emitter Amplifier Stage
• One such Common Emitter Amplifier configuration of an NPN
transistor is called a Class A Amplifier. A "Class A Amplifier"
operation is one where the transistors Base terminal is biased in
such a way as to forward bias the Base-emitter junction. The result
is that the transistor is always operating halfway between its cut-off
and saturation regions, thereby allowing the transistor amplifier to
accurately reproduce the positive and negative halves of any AC
input signal superimposed upon this DC biasing voltage. Without
this "Bias Voltage" only one half of the input waveform would be
amplified. This common emitter amplifier configuration using an
NPN transistor has many applications but is commonly used in
audio circuits such as pre-amplifier and power amplifier stages.

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Output Characteristic Curves

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Transistor Resistance Values

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The transistor as a switch

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Transistor as a Switch

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Transistor as a Switch

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Basic NPN Transistor Switching Circuit

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Basic NPN Transistor Switching Circuit
• To operate the transistor as a switch the transistor needs to be turned
either fully "OFF" (cut-off) or fully "ON" (saturated). An ideal transistor
switch would have infinite circuit resistance between the Collector and
Emitter when turned "fully-OFF" resulting in zero current flowing through
it and zero resistance between the Collector and Emitter when turned
"fully-ON", resulting in maximum current flow. In practice when the
transistor is turned "OFF", small leakage currents flow through the
transistor and when fully "ON" the device has a low resistance value
causing a small saturation voltage ( VCE ) across it. Even though the
transistor is not a perfect switch, in both the cut-off and saturation regions
the power dissipated by the transistor is at its minimum.

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Logic Switch
• Transistor switches are used for a wide variety of
applications such as interfacing large current or high
voltage devices like motors, relays or lamps to low
voltage digital logic IC's or gates like AND gates or OR
gates. Here, the output from a digital logic gate is
only +5v but the device to be controlled may require
a 12 or even 24 volts supply. Or the load such as a DC
Motor may need to have its speed controlled using a
series of pulses (Pulse Width Modulation). transistor
switches will allow us to do this faster and more
easily than with conventional mechanical switches.
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The Field Effect Transistor
• The Field Effect Transistor, or simply FET however, uses the
voltage that is applied to their input terminal, called the Gate
to control the current flowing through them resulting in the
output current being proportional to the input voltage. As
their operation relies on an electric field (hence the name
field effect) generated by the input Gate voltage, this then
makes the Field Effect Transistor a "VOLTAGE" The Field Effect
Transistor is a three terminal unipolar semiconductor device
that has very similar characteristics to those of their Bipolar
Transistor counterparts ie, high efficiency, instant operation,
robust and cheap and can be used in most electronic circuit
applications to replace bipolar junction transistors (BJT) .
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Symbols and Basic Construction

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Output Characteristics

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Biasing of JFET Amplifier

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MOSFET
• The IGFET or MOSFET is a voltage controlled field
effect transistor that differs from a JFET in that it has
a "Metal Oxide" Gate electrode which is electrically
insulated from the main semiconductor N-channel or
P-channel by a thin layer of insulating material
usually silicon dioxide (commonly known as glass).
This insulated metal gate electrode can be thought of
as one plate of a capacitor. The isolation of the
controlling Gate makes the input resistance of the
MOSFET extremely high in the Mega-ohms ( MΩ )
region thereby making it almost infinite.
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Symbols and Basic Construction

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Depletion Mode N-Channel MOSFET

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Depletion Type MOSFET
• The depletion-mode MOSFET is constructed in
a similar way to their JFET transistor
counterparts were the drain-source channel is
inherently conductive with the electrons and
holes already present within the N-type or P-
type channel. This doping of the channel
produces a conducting path of low resistance
between the Drain and Source with zero Gate
bias.
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Enhancement N-Channel MOSFET

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CMOS
• Enhancement-mode MOSFETs make excellent
electronics switches due to their low "ON" resistance
and extremely high "OFF" resistance as well as their
infinitely high gate resistance. Enhancement-mode
MOSFETs are used in integrated circuits to produce
CMOS type Logic Gates and power switching circuits
in the form of as PMOS (P-channel) and NMOS (N-
channel) gates. CMOS actually stands for
Complementary MOS meaning that the logic device
has both PMOS and NMOS within its design
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Enhancement mode N-Channel MOSFET Amplifier

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Enhancement Type MOSFET
• The DC biasing of this common source (CS) MOSFET amplifier
circuit is virtually identical to the JFET amplifier. The MOSFET
circuit is biased in class A mode by the voltage divider
network formed by resistors R1 and R2. The AC input
resistance is given as RIN = RG = 1MΩ.
• Metal Oxide Semiconductor Field Effect Transistors are three
terminal active devices made from different semiconductor
materials that can act as either an insulator or a conductor by
the application of a small signal voltage. The MOSFETs ability
to change between these two states enables it to have two
basic functions: "switching" (digital electronics) or
"amplification" (analogue electronics).
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The MOSFETs
• The MOSFETs have the ability to operate within three different regions:
• 1. Cut-off Region - with VGS < Vthreshold the gate-source voltage is lower
than the threshold voltage so the transistor is switched "fully-OFF" and
IDS = 0, the transistor acts as an open circuit
•
• 2. Linear (Ohmic) Region - with VGS > Vthreshold and VDS > VGS the transistor
is in its constant resistance region and acts like a variable resistor whose
value is determined by the gate voltage, VGS
•
• 3. Saturation Region - with VGS > Vthreshold the transistor is in its constant
current region and is switched "fully-ON". The current IDS = maximum as
the transistor acts as a closed circuit.

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The MOSFET as a Switch

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MOSFET as a Switch
• The minimum ON-state gate voltage required to ensure that the MOSFET
remains fully-ON when carrying the selected drain current can be
determined from the V-I transfer curves above. When VIN is HIGH or equal
to VDD, the MOSFET Q-point moves to point A along the load line. The
drain current ID increases to its maximum value due to a reduction in the
channel resistance. ID becomes a constant value independent of VDD, and is
dependent only on VGS. Therefore, the transistor behaves like a closed
switch but the channel ON-resistance does not reduce fully to zero due to
its RDS(on) value, but gets very small.
• Likewise, when VIN is LOW or reduced to zero, the MOSFET Q-point moves
from point A to point B along the load line. The channel resistance is very
high so the transistor acts like an open circuit and no current flows
through the channel. So if the gate voltage of the MOSFET toggles
between two values, HIGH and LOW the MOSFET will behave as a "single-
pole single-throw" (SPST) solid state switch’

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Cut Off Region

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Saturation Region

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Using MOSFET as a Switch

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Power MOSFET Motor Control

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CMOS Controller
• The two MOSFETs are configured to produce a bi-directional switch
from a dual supply with the motor connected between the common
drain connection and ground reference. When the input is LOW the
P-channel MOSFET is switched-ON as its gate-source junction is
negatively biased so the motor rotates in one direction. Only the
positive +VDD supply rail is used to drive the motor.
• When the input is HIGH, the P-channel device switches-OFF and the
N-channel device switches-ON as its gate-source junction is
positively biased. The motor now rotates in the opposite direction
because the motors terminal voltage has been reversed as it is now
supplied by the negative -VDD supply rail. Then the P-channel
MOSFET is used to switch the positive supply to the motor for
forward direction (high-side switching) while the N-channel
MOSFET is used to switch the negative supply to the motor for
reverse direction (low-side switching).
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CMOS Controller
• There are a variety of configurations for driving the two
MOSFETs with many different applications. Both the P-
channel and the N-channel devices can be driven by a
single gate drive IC as shown. However, to avoid cross
conduction with both MOSFETs conducting at the same
time across the two polarities of the dual supply, fast
switching devices are required to provide some time
difference between them turning "OFF" and the other
turning "ON". One way to overcome this problem is to
drive both MOSFETs gates separately. This then produces
a third option of "STOP" to the motor when both
MOSFETs are "OFF".

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CMOS Controller

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The FET Family Tree

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Differences between a FET and a Bipolar

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• END OF PRESENTATION
• THANK YOU

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Electronic Devices and Circuits

ELECTRICAL AND ELECTRONICS

CONSTRUCTION AND CHARACTERISTICS

ELECTRICAL AND ELECTRONICS

• The outer layers have widths much greater

• For the transistors shown, the ratio of the

• ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

• ELECTRICAL AND ELECTRONICS

Basic transistor relationships

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

This regenerative action is called Thermal runaway which results in

• ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

FIXED BIAS CONFIGURATION

EMITTER STABILIZED BIAS CONFIGURATION

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

VOLTAGE-DIVIDER BIAS CONFIGURATION

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

• Apart from the benefits of previous bias

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

ELECTRICAL AND ELECTRONICS

BJT TRANSISTOR BIASING

ELECTRICAL AND ELECTRONICS

BJT TRANSISTOR BIASING

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