PHYSICS PRESENTATION

TOPIC -> METALS SEMICONDUCTORS AND

INSULATORS AND THEIR ENERGY BAND STRUCTURES .

SUBMITTED TO
MONIKA MISHRA MAM
PRESENTED BY
- MUSHARRAF HAYAT
05711502821
-MONU KUMAR
02211502821
-SATYAM TIWARI
04711502821
-POOJA RANA
01311502821
-KASHVI MALIK
01111502821
 METALS, SEMICONDUCTORS, AND
INSULATORS
Every solid has its own characteristic energy band structure.
In order for a material to be conductive, both free electrons and empty states must be
available.

Metals have free electrons and partially filled valence bands, therefore they are highly
conductive (a).
Semimetals have their highest band filled. This filled band, however, overlaps with the next
higher band, therefore they are conductive but with slightly higher resistivity than normal metals
(b). Examples: arsenic, bismuth, and antimony.
Insulators have filled valence bands and empty conduction bands, separated by a large
band gap Eg(typically >4eV), they have high resistivity (c ).
Semiconductors have similar band structure as insulators but with a much smaller band gap.
Some electrons can jump to the empty conduction band by thermal or optical excitation (d).
Eg=1.1 eV for Si, 0.67 eV for Ge and 1.43 eV for GaAs
 CONDUCTION IN TERMS
OF BAND
Metals
An energy band is a range of allowed electron energies.
The energy band in a metal is only partially filled with electrons.
Metals have overlapping valence and conduction bands
FOR AN ELECTRON TO BECOME FREE TO CONDUCT, IT MUST
BE PROMOTED INTO AN EMPTY AVAILABLE ENERGY STATE
FOR METALS, THESE EMPTY STATES ARE ADJACENT TO THE
FILLED STATES
Generally, energy supplied by an electric field is enough to stimulate
electrons into an empty state

“Freedom”
Electron Energy

Empty States
Energy Band
States Filled with Electrons

Distance
 BAND DIAGRAM:
METAL
T>0
EC
Fermi Energy band to
“filling” EF be “filled”
function Conduction band
(Partially Filled)
E=0

At T = 0, all levels in conduction band below the Fermi energy EF are filled
with electrons, while all levels above EF are empty.
Electrons are free to move into “empty” states of conduction band with
only a small electric field E, leading to high electrical conductivity!
At T > 0, electrons have a probability to be thermally “excited” from below
the Fermi energy to above it.
 RESISTIVITY () IN
METALS
Resistivity typically increases linearly with temperature:
t = o + T
Phonons scatter electrons. Where ρo and α are constants for an
specific material
Impurities tend to increase resistivity: Impurities scatter electrons in
metals
Plastic Deformation tends to raise resistivity dislocations scatter
electrons
1
 
The electrical conductivitynq 
is controlled by controlling the number of
charge carriers in the material (n) and the mobility or “ease of
movement” of the charge carriers ()
 TEMPERATURE DEPENDENCE,
METALS
There are three contributions to 
t due to phonons (thermal)
i due to impurities
d due to deformation

 = t + i +  d
The number of electrons in
the conduction band does
not vary with temperature.
All the observed temperature
dependence of  in metals
arise from changes in 
 INSULA
TOR
The valence band and conduction band are separated by a large (> 4eV)
energy gap, which is a “forbidden” range of energies.
Electrons must be promoted across the energy gap to conduct, but the
energy gap is large. Energy gap º Eg

“Conduction Band”
Empty
Electron
Energy

“Forbidden” Energy
Gap
“Valence Band”
Filled with Electrons

Distance
 BAND DIAGRAM:
INSULATOR
Conduction band
T>0 (Empty)
EC
Egap
EF

Valence band E
(Filled)
V
At T = 0, lower valence band is filled with electrons and upper conduction
band is empty, leading to zero conductivity.
Fermi energy EF is at midpoint of large energy gap (2-10 eV) between
conduction and valence bands.
At T > 0, electrons are usually NOT thermally “excited” from valence to
conduction band, leading to zero conductivity.
 CONDUCTION IN IONIC MATERIALS
(INSULATORS)
Conduction by electrons (Electronic Conduction): In a ceramic, all
the outer (valence) electrons are involved in ionic or covalent bonds and thus they
are restricted to an ambit of one or two atoms.  g
E
If Eg is the energy gap, the fraction of electrons in the conduction band is:
e
A good insulator will have a band gap >>5eV and kBT~0.025eV at room temperature2k
AsBT
a
result of thermal excitation, the fraction of electrons in the conduction band is

~e-200 or 10-80.
There are other ways of changing the electrical conductivity in the ceramic which have
a far greater effect than temperature.
•Doping with an element whose valence is different from the atom it replaces. The
doping levels in an insulator are generally greater than the ones used in semiconductors.
Turning it around, material purity is important in making a good insulator.
•If the valence of an ion can be variable (like iron), “hoping” of conduction can
occur, also known as “polaron” conduction. Transition elements.
•Transition elements: Empty or partially filled d or f orbitals can overlap providing a
conduction network throughout the solid.
 ENERGY BANDS IN
SEMICONDUCTORS
Energy Levels and Energy Gap in a Pure Semiconductor.
The energy gap is < 2 eV. Energy gap º Eg

“Conduction Band” (Nearly)

Empty – Free electrons

“Forbidden” Energy Gap

Electron
Energy

“Valence Band” (Nearly) Filled with

Electrons – Bonding electrons

Semiconductors have resistivities in between those of metals and insulators. Elemental

semiconductors (Si, Ge) are perfectly covalent; by symmetry electrons shared
between two atoms are to be found with equal probability in each atom.
Compound semiconductors (GaAs, CdSe) always have some degree of ionicity. In III-V
compounds, eg. Ga+3As+5, the five-valent As atoms retains slightly more charge than is
necessary to compensate for the positive As+5 charge of the ion core, while the charge of Ga+3
is not entirely compensated. Sharing of electrons occurs still less fairly between the ions Cd+2
and Se+6 in the II-VI compund CdSe.
SEMICONDUCTOR MATERIALS
SEMICONDUCTORBANDGAP
ENERGY E
Carbon (Diamond)
(EV) G
5.47
Silicon 1.12
Germanium 0.66
Tin 0.082
Gallium Arsenide 1.42 IIIA IV V V IA
A A
Indium Phosphide 1.35 5
10 .811
6
12.01115
7
14.0067
8
15.9994

Silicon Carbide 3.00 B C N O

Cadmium Selenide 1.70 Bo ro n Ca rb o n N it ro g e n O xy g e n
26.9815 28.086 30.9738 32.064
Boron Nitride 7.50 13 14 15 16

Aluminum Nitride 6.20 IIB

Al Si P S
Gallium Nitride 3.40 A lum inum Silic o n Pho sp ho rus Sulf ur

Indium Nitride 1.90

65.37 69.72 72.59 74.922 78.96

30 31 32 33 34

Portion of the Periodic Table Including the Zn Ga Ge As Se

Zinc G a llium Ge rm a nium A rse nic Se le nium
Most Important Semiconductor 112.40 114.82 118.69 121.75 127.60
Elements 48 49 50 51 52

Cd In Sn Sb Te
C a d m ium Ind ium Tin A ntim o ny Te llurium
200.59 204.37 207.19 208.980 (210)
80 81 82 83 84
 BAND DIAGRAM: SEMICONDUCTOR WITH
NO DOPING
T>0
Conduction band
(Partially Filled)
E
EF
CV
Valence band
(Partially Empty) E

At T = 0, lower valence band is filled with electrons and upper conduction

band is empty, leading to zero conductivity.
Fermi energy EF is at midpoint of small energy gap (<1 eV) between
conduction and valence bands.
At T > 0, electrons thermally “excited” from valence to conduction band,
leading to measurable conductivity.
 SEMI-CONDUCTORS
(INTRINSIC - IDEAL)
Perfectly crystalline (no perturbations in the periodic
lattice). Perfectly pure – no foreign atoms and no
surface effects
At higher temperatures, e.g., room temperature (T @ 300 K), some
electrons are thermally excited from the valence band into the conduction
band where they are free to move.
“Holes” are left behind in the valence band. These holes behave like
mobile positive charges.

CB electrons and VB holes

can move around (carriers).
At edges of band the kinetic
energy of the carriers is nearly
zero. The electron energy
increases upwards.
The hole energy
increases downwards.
Si Si Si Si Si Si Si
positive
ion core
Si Si Si Si Si Si Si
valence
electron
Si Si Si Si Si Si Si

Si Si Si Si Si Si Si
free
electron
Si Si Si Si Si Si Si
free

Si Si Si Si Si Si Si hole
Semiconductors in Group
IV
Carbon
Silicon
Germanium
Tin
Each has 4 valence Electrons.
Covalent bond
 UV 12.4-3.10
Violet eV
Blue 425-492 3.10-2.92
Green nm eV
Yellow 492-575 2.92-2.52
Orang nm eV
e Red 575-585 2.52-2.15
Near 10,000-700
nm nm
eV 1.77-0.12
IR 585-647
eV 2.15-2.12
nm eV
647-700 2.12-1.92
nm
Red eV
Violet
1.92-1.77
eV

Orange Blue
100-400 NM
400-425 NM
Yellow Green
 PHOTOCONDUCT
IVITY
Conductivity is dependent on
the intensity of the incident
Eg hh EEg g electromagnetic radiation

E = h = hc/, c = (m)(sec -1)

Band Si - 1.11 eV (Infra red)

Gaps: Ge 0.66 eV (Infra red)
GaAs 1.42 eV (Visible red)
ZnSe 2.70 eV (Visible
yellow) SiC 2.86 eV (Visible
blue) GaN 3.40eV (Blue)
AlN 6.20eV (Blue-UV)
BN 7.50eV (UV)
Total conductivity  = e + h = nqe + pqh
For intrinsic semiconductors: n = p &  =nq(e + h)
REFERENCES-

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WWW.LEARNMECHANICAL.COM
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