Tutorial (07 March)

Frequency Analysis
 Numerical1
The MOSFET in the circuit has Vt = 1 V, k'nW/L = 0.8 mA/V2 , and VA = 40 V.
(a) Find the values of Rs , RD , and RG so that ID = 0.1 mA, the largest possible value for R D is used while a
maximum signal swing at the drain of ±1 V is possible, and the input resistance at the gate is 10 MΩ.
(b) Find the values of gm and r0 at the bias point.
(c) If terminal Z is grounded, terminal X is connected to a signal source having a resistance of 1 M Ω, and
terminal Y is connected to a load resistance of 40 k Ω, find the voltage gain from signal source to load.
(d) If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited. What is the output
resistance of the source follower?
(e) If terminal X is grounded and terminal Z is connected to a current source delivering a signal current of
10 uA and having a resistance of 100 k Ω, find the voltage signal that can be measured at Y. For simplicity,
neglect the effect of r0 .
 Numerical1
The MOSFET in the circuit has Vt = 1 V, k'nW/L = 0.8 mA/V2 , and VA = 40 V.
(a) Find the values of Rs , RD , and RG so that ID = 0.1 mA, the largest possible value for R D is used while a
maximum signal swing at the drain of ±1 V is possible, and the input resistance at the gate is 10 MΩ.
 Numerical1
The MOSFET in the circuit has Vt = 1 V, k'nW/L = 0.8 mA/V2 , and VA = 40 V.
(b) Find the values of gm and r0 at the bias point.
(c) If terminal Z is grounded, terminal X is connected to a signal source having a resistance of 1 M Ω, and
terminal Y is connected to a load resistance of 40 k Ω, find the voltage gain from signal source to load.
 Numerical1
The MOSFET in the circuit has Vt = 1 V, k'nW/L = 0.8 mA/V2 , and VA = 40 V.
(d) If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited. What is the output
resistance of the source follower?
(e) If terminal X is grounded and terminal Z is connected to a current source delivering a signal current of
10 uA and having a resistance of 100 k Ω, find the voltage signal that can be measured at Y. For simplicity,
neglect the effect of r0 .
 Numerical 2
The NMOS transistor in the source-follower circuit of Fig. (a) has gm = 5 mA/V and a
large r0 . Find the open-circuit voltage gain and the output resistance.

(b) The NMOS transistor in the common-gate amplifier of Fig. (b) has gm = 5 mA/V
and a large r0. Find the input resistance and the voltage gain.
(c) If the output of the source follower in (a) is connected to the input of the common-
gate amplifier in (b), use the results of (a) and (b) to obtain the overall voltage gain v0
/vi .
 Numerical 2
The NMOS transistor in the source-follower circuit of Fig. (a) has gm = 5 mA/V and a
large r0 . Find the open-circuit voltage gain and the output resistance.

Check the
Solution
 Numerical 2
The NMOS transistor in the source-follower circuit of Fig. (a) has gm = 5 mA/V and a
large r0 .

(b) The NMOS transistor in the common-gate amplifier of Fig. (b) has gm = 5 mA/V
and a large r0. Find the input resistance and the voltage gain.
(c) If the output of the source follower in (a) is connected to the input of the common-
gate amplifier in (b), use the results of (a) and (b) to obtain the overall voltage gain v0
/vi .
Check the
Solution
 Numerical 3
• In a FET amplifier, such as that in Fig., the resistance of the source Rsig = 100 kΩ,
amplifier input resistance (which is due to the biasing network) Rin = 100 kΩ,
Cgs = 1 pF, Cgd = 0.2 pF, gm = 3 mA/V, r0 = 50 kΩ, RD = 8 kΩ, and RL = 10 kΩ.
Determine the expected 3-dB cutoff frequency fH and the midband gain. In evaluating
ways to double fH , a designer considers the alternatives of changing either Rout or Rin.
To raise fH as described, what separate change in each would be required? What
midband voltage gain results in each case?
 Numerical3
• In a FET amplifier, such as that in Fig. , the resistance of the source Rsig = 100 kΩ,
amplifier input resistance (which is due to the biasing network) Rin = 100 kΩ,
Cgs = 1 pF, Cgd = 0.2 pF, gm = 3 mA/V, r0 = 50 kΩ, RD = 8 kΩ, and RL = 10 kΩ.
Determine the expected 3-dB cutoff frequency fH and the midband gain.
• In a FET amplifier, such as that in Fig. , the resistance of the source Rsig = 100 kΩ,
amplifier input resistance (which is due to the biasing network) Rin = 100 kΩ,
Cgs = 1 pF, Cgd = 0.2 pF, gm = 3 mA/V, r0 = 50 kΩ, RD = 8 kΩ, and RL = 10 kΩ.
In evaluating ways to double fH , a designer considers the alternatives of changing either
Rout or Rin. To raise fH as described, what separate change in each would be required?
What midband voltage gain results in each case?
• In a FET amplifier, such as that in Fig. , the resistance of the source Rsig = 100 kΩ,
amplifier input resistance (which is due to the biasing network) Rin = 100 kΩ,
Cgs = 1 pF, Cgd = 0.2 pF, gm = 3 mA/V, r0 = 50 kΩ, RD = 8 kΩ, and RL = 10 kΩ.
In evaluating ways to double fH , a designer considers the alternatives of changing either
Rout or Rin. To raise fH as described, what separate change in each would be required?
What midband voltage gain results in each case?