Short Channel Effects
Short Channel Effects
in MOSFETs
Fabio D’Agostino
Daniele Quercia
Fall, 2000
Presentation Outline
• Short-Channel Devices
• A numerical example
• Conclusion
Definition
•Surface scattering
•Velocity saturation
•Impact ionization
•Hot electrons
Drain-induced barrier lowering (DIBL)
Punchthrough
gm = W Cox vde(sat)
Impact ionization
1
2q Si N A 2 F
qDI
VT 0 VFB 2 F
Cox Cox
x j x dD
2
x dm x j LD
2 2
Modification of VTH due to SCE
where 2
xdD Si VDS 0
qN A
1 x j 2 xdD 2 x
VT 0 2q Si N A 2 F 1 1 1 dS
1
Cox 2 L xj
x
j
Modification of VTH due to SCE
Numerical example
We obtain …
where
___________
VT0= ( 0.343/ L[m] ) * (-0.724 + ( 1 + 2 xdD)
_________________
xDd = 0.13 (0.76 + VDS)
Modification of VTH due to SCE
0.8
Vth: Threshold voltage [V]
0.7
0.6
0.5
0.4
0.3
0.2
0 1 2 3 4 5 6
L: Channel length [um]
Simulation: impact of SCE on the threshold voltage