Medium Power Diodes

Submitted by:
Vikram 09235
Nikhil 09236
Vivek 09238
Prashant 09239
 Introduction
Power semiconductor diode is the “power level” counter part of
the “low power signal diodes” which we all know. Compared to
small signal diodes these devices are required to carry up to
several kA of current under forward bias condition and block up
to several kV under reverse biased condition. These extreme
requirements call for important structural changes in a power
diode which significantly affect their operating characteristics. It
is, therefore, important to understand the nature and implication
of these modifications in relation to the simplest of the power
devices, i.e., a power semiconductor diode.
Construction:
As compared to small signal diodes,
power diodes are required
To handle bulk power. Thus the first
basic need is to diode capable of
handling such power. A power diode
is required to conduct several kA in
forward biasing and
block several kV in reverse direction with as little power loss as
possible. By lightly doping the diode , the width of the depletion layer
can be increased and thus it can resist high voltages. But such a
construction will result in high resistance in the forward direction, thus
high power losses. Thus in order to provide wide depletion region under
reverse bias and very small resistance in forward bias a drift layer is
introduced b/w heavily doped p and n region.
Power diode under reverse bias:

Punch through type Non punch through type

When a reverse voltage is applied, the width of the depletion layer in
the diode increases. However since NdD << NaA the space charge almost
extends in the n- drift region. Thus 2 conditions arises:

 Width of drift region is less than depletion layer known as “PUNCH

THOURGH”. In non-punch through type diodes the electric field
strength is maximum at the p+ n- junction and decrease to zero at the
end of the depletion region.

 Width of drift region is more than depletion layer known as “NON

PUNCH THROUGH”. In the punch through construction the field
strength is more uniform.

If the electric field is assumed to be constant then for the same break
down voltage, the “punch through” construction will require
approximately half the drift region width of a comparable “ non - punch
through” construction.
 Under reverse bias condition only a small
leakage current (less than 100mA for a
rated forward current in excess of 1000A)
flows in the reverse direction (i.e from
cathode to anode). This reverse current is
independent of the applied reverse
voltage but highly sensitive to junction
temperature variation. When the applied
reverse voltage reaches the break down
voltage, reverse current increases very

rapidly due to impact ionization and consequent avalanche multiplication

process. Voltage across the device dose not increase any further while the
reverse current is limited by the external circuit. Excessive power loss and
consequent increase in the junction temperature due to continued operation
in the reverse brake down region quickly destroies the diode.
specifications of a power Diode under reverse bias
condition
DC Blocking Voltage (VRDC): Maximum direct
voltage that can be applied in the reverse
direction (i.e cathode positive with respect to
anode) across the device for indefinite period of
time. It is useful for selecting free-wheeling
diodes in DC-DC Choppers and DC-AC voltage
source inverter circuits.

Peak Non-Repetitive Reverse Voltage

(VRSM): It is the maximum allowable value of
the instantaneous reverse voltage across the
device that must not recur. Such transient
reverse voltage can be generated by power line
switching (i.e circuit Breaker opening / closing)
or lightning surges
RMS Reverse Voltage (VRMS): It is the RMS value of the power frequency (50/60
HZ) since wave voltage that can be directly applied across the device. Useful for
selecting diodes for controlled / uncontrolled power frequency line commutated
AC to DC rectifiers. It is given by the manufacturer under the assumption that
the supply voltage may rise by 10% at the most. This rating is different for
resistive and capacitive loads.

Peak Repetitive Reverse Voltage (VRRM): This is the maximum

permissible value of the instantiations reverse voltage appearing periodically
across the device. The time period between two consecutive appearances is
assumed to be equal to half the power cycle (i.e 10ms for 50 HZ supply). This
type of period reverse voltage may appear due to “commutation” in a converter.
Characteristics of a forward biased
power diode:
As the metallurgical p+ n- junction becomes
forward biased there will be injection of
excess p type carrier into the n- side. At low
level of injections (i.e δp << nno) all excess p
type carriers recombine with n type carriers
in the n- drift region. However at high level
of injection (i.e large forward current
density) the excess p type carrier density
distribution reaches the n- n+ junction and
attracts electron from the n+ cathode. This
leads to electron injection into the drift
region across the n- n+ junction with carrier
densities δn = δp. This mechanism is called
“double injection”
Free carrier density across the width
of diode:
O Maximum RMS Forward current (IFRMS): Due to
predominantly resistive nature of the forward voltage drop across a
forward biased power diode, RMS value of the forward current
determines the conduction power loss. The specification gives the
maximum allowable RMS value of the forward current of a given wave
shape (usually a half cycle sine wave of power frequency) and at a
specified case temperature. However, this specification can be used as a
guideline for almost all wave shapes of the forward current.
O Maximum Average Forward Current (IFAVM): Diodes
are often used in rectifier circuits supplying a DC (average) current to be
load. In such cases the average load current and the diode forward
current usually have a simple relationship. Therefore, it will be of
interest to know the maximum average current a diode can conduct in
the forward direction. This specification gives the maximum average
value of power frequency half cycle sine wave current allowed to flow
through the diode in the forward direction. Average current rating of a
diode decreases with reduction in conduction angle due to increase in
current “form factor”.
O Both IFRMS and IFAVM ratings are given at a specified case temperature. If
the case temperature increases beyond this limit these ratings has to be
reduced correspondingly. “Derating curves” provide by the
manufacturers give the relationship between I FAVM (IFRMS) with allowable
case temperature as shown in Fig.

Derating
curves for
the
forward
current of
a Power
Diode
Surge and Fault Current: In some rectifier applications a diode may be
required to conduct forward currents far in excess of its RMS or average forward
current rating for some duration (several cycles of the power frequency). This is
called the repetitive surge forward current of a diode. A diode is expected to operate
normally after the surge duration is over. On the other hand, fault current arising due
to some abnormality in the power circuit may have a higher peak valve but exists for
shorter duration (usually less than an half cycle of the power frequency). A diode
circuit is expected to be disconnected from the power line following a fault.
Therefore, a fault current is a non repetitive surge current. Power diodes are capable
of withstanding both types of surge currents and this capability is expressed in terms
of two surge current ratings

Peak Repetitive surge current rating (IFRM): This is the peak valve of
the repetitive surge current that can be allowed to flow through the diode for a
specific duration and for specified conditions before and after the surge. The surge
current waveform is assumed to be half sinusoidal of power frequency with
current pulses separated by “OFF” periods of equal duration. The case temperature
is usually specified at its maximum allowable valve before the surge. The diode
should be capable of withstanding maximum repetitive peak reverse voltage
(VRRM) and Maximum allowable average forward current (I FAVM) following the
surge. The surge current specification is usually given as a function of the surge
duration in number of cycles of the power frequency
O Peak Non-Repetitive surge current (IFRM): This
specification is similar to the previous one except that the current pulse
duration is assumed to be within one half cycle of the power frequency.
This specification is given as a function of the current pulse duration

Peak Repetitive
surge current VS
time curve of a
power diode