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Presented By: Gaurav Gupta

This document summarizes an experiment on studying the characteristics of a p-n junction diode. The objectives are to analyze the I-V curve, reverse saturation current, temperature dependence of junction voltage and energy band gap, and variation of depletion capacitance with reverse bias. The key aspects covered include the theory of forward and reverse biasing, formulas for diode equation and temperature coefficient, and how capacitance changes with applied voltage. The apparatus required and procedures are outlined, including plotting graphs of lnI vs V, temperature vs junction voltage, and capacitance vs bias voltage.

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Lakshay Bhardwaj
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50 views14 pages

Presented By: Gaurav Gupta

This document summarizes an experiment on studying the characteristics of a p-n junction diode. The objectives are to analyze the I-V curve, reverse saturation current, temperature dependence of junction voltage and energy band gap, and variation of depletion capacitance with reverse bias. The key aspects covered include the theory of forward and reverse biasing, formulas for diode equation and temperature coefficient, and how capacitance changes with applied voltage. The apparatus required and procedures are outlined, including plotting graphs of lnI vs V, temperature vs junction voltage, and capacitance vs bias voltage.

Uploaded by

Lakshay Bhardwaj
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 14

PRESENTED BY

Gaurav Gupta

Hrishika Roy

Monika Rani
AIM:- 1. To study the I-V characteristic of p-n junction
diode, Reverse saturation current.
2. Temperature coefficient of junction voltage and energy
band gap.
3. The depletion capacitance and its variation with
reverse bias.
APPARATUS REQUIRED:-
1. STUDY OF PN JUNCTION.
2. OVEN.
3. SAMPLE SET(Si , Ge).
4. CRO
THEORY:- The p-n junction diode is the diode formed when a p-type is fused with n-type
semiconductor creating a potential barrier voltage across the junction.

1. FORWORD BIASING:- When p side of semiconductor is connected to positive side of


battery and n side is connected to the negative side.

2. REVERSE BIASING:- When the p side of semiconductor is connected to the negative side
of battery and n side to the positive side.

FORMULA USED:-
1. DIODE EQUATION:-
Taking log both sides we get,

Compare the above Equation with the Equation of straight line, y=mx+c
We will get slope,

OBSERVATION TABLE:-
Value of the eta can be calculated using graph
shown below:

*This is the graph for I-V characteristics of p-n


junction diode.
* This is the graph plotted between lnI vs V.
* The slope of the straight line gives us the value of
eta.
* The y intercept gives the value of saturation
current in logarithmic form.
Temperature dependence
• PN junction diode parameters like reverse saturation current, bias current, reverse breakdown voltage and
barrier voltage are dependent on temperature.

• A PN junction contains p-type and n-type semiconductor joined under certain conditions. Due to this as soon as
they both come in contact with each other, a barrier potential is developed at the centre due to transfer of
electrons and holes from n-type to p-type and vice versa.
• As temperature of the PN junction increases the barrier potential helps to increase the velocity of holes and
electrons and thus results in increase in conductance. With the decrease in barrier potential, conductivity of the
diode increases.
• According to the graph plotted between temperature and junction voltage, with increase in temperature ,
junction voltage decreases.
• The energy band gap of semiconductors tends to decrease as the temperature is increased.
• In order to study energy band gap of a semi conductor material, the variation of conductance with temperature
is studied.
• In semiconductors at low temperatures, there are few charge carriers to move, so conductivity is quite low.
However, with increase in temperature, more number of charge carriers get sufficient energy to be excited to the
conduction band. This leads to increase in the number of free charge carriers and hence increase in conductivity.
FORMULA USED:-The energy band gap is given by

OBSERVATIONS TABLE:-
This is the graph for temperature vs junction voltage:

We have taken a constant forward current


The slope of the graph gives us the temperature coefficient.
Capacitance variation with reverse biasing:-
Capacitance:-This is the capacitance developed due to the potential barrier of junction diode as we
have electron concentration at junction face of p side and holes concentration at junction face of n
type. It is known as transition capacitance. It is given by

where, Vbi is built in potential.


ND is donor concentration
NA is acceptor concentration.
Here, In junction diode we also have a diffusion capacitance developed
due to the forward flow of charge carriers when we apply a forward
bias.

The relation is given by

The graph below is the curve between diffusion capacitance and


voltage variation
FORMULA USED:- We have used two different signals with voltage V1 & V2. having
frequency W1 and W2.

Where, Cd is the depletion capacitance.


V is applied potential.
R is the feedback resistance.

OBSERVATION TABLE:-
The graph shown below is between Capacitance vs bias Voltage:-
* As Reverse bias voltage is Increased, the Capacitance is Decreased.
* Capacitance varies inversely with reverse bias voltage.
THANKYOU.
THANK YOU.

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