Power semiconductor diodes and

circuits
•Power diodes have a significant role in power
electronics circuits for conversion of electrical power.
•Power diode act as a switch to perform various
functions, such as switch in rectifiers, freewheeling in
switching regulators, voltage isolation etc.
•Power diodes can be assumed as ideal switch.
•Power diodes are similar to pn junction diodes except
that the power diodes have high power, voltage and
current rating as compare to ordinary signal diodes.
•Frequency response of power diodes is low as
compared to ordinary signal diodes.
 DIODE CHARACTERISTICS
• A p-n junction diode is formed by placing p and
n type semiconductor materials in intimate
contact on an atomic scale. This may be
achieved by diffusing acceptor impurities in to an
n type silicon crystal or by the opposite
sequence.
• In an open circuit p-n junction diode, majority
carriers from either side will defuse across the
junction to the opposite side where they are in
minority. These diffusing carriers will leave
behind a region of ionized atoms at the
immediate vicinity of the metallurgical junction.
• This region of immobile ionized atoms is
called the space charge region. This
process continues till the resultant electric
field (created by the space charge density)
and the potential barrier at the junction
builds up to sufficient level to prevent any
further migration of carriers.
• At this point the p-n junction is said to be
in thermal equilibrium condition.
 REVERSE BIAS
• When an external voltage is applied with p side
more negative than the n side the junction is
said to be under reverse bias condition. This
reverse bias adds to the height of the potential
barrier. The electric field strength at the junction
and the width of the space change region (also
called “the depletion region” because of the
absence of free carriers) also increases. On the
other hand, free minority carrier densities (np in
the p side and pn in the n side) will be zero at
the edge of the depletion region on either side
(Fig 2.1 (b)).
• This gradient in minority carrier density
causes a small flux of minority carriers to
defuse towards the deletion layer where
they are swept immediately by the large
electric field into the electrical neutral
region of the opposite side. This will
constitute a small leakage current across
the junction from the n side to the p side.
There will also be a contribution to the
leakage current by the electron hole pairs
generated in the space change layer by
the thermal ionization process.
• These two components of current together
is called the “reverse saturation current
Is” of the diode. Value of Is is independent
of the reverse voltage magnitude (up to a
certain level) but extremely sensitive to
temperature variation.
• When the applied reverse voltage exceeds
some threshold value (for a given diode)
the reverse current increases rapidly. The
diode is said to have undergone “reverse
break down”.
• Electrons accelerated by the large depletion
layer electric field due to the applied reverse
voltage may attain sufficient K.E to liberate
another electron from the covalent bonds when it
strikes a silicon atom. The liberated electron in
turn may repeat the process. This cascading
effect (avalanche) may produce a large number
of free electrons very quickly resulting in a large
reverse current. The power dissipated in the
device increases manifold and may cause its
destruction. Therefore, operation of a diode in
the reverse breakdown region must be avoided.
 FORWARD BIAS
• When the diode is forward biased (i.e., p side more positive than n
side) the potential barrier is lowered and a very large number of
minority carriers are injected to both sides of the junction. The
injected minority carriers eventually recombines with the majority
carries as they defuse further into the electrically neutral drift region.
The excess free carrier density in both p and n side follows
exponential decay characteristics.
• Carrier density gradients on either side of the junction are supported
by a forward current IF (flowing from p side to n side) which can be
expressed as
• ID=IS exp(VD/nVT) -1
• Where Is = Reverse saturation current ( Amps)
• v = Applied forward voltage across the device (volts)
• q = Change of an electron
• k = Boltzman’s constant
• T = Temperature in Kelvin
I-V Characteristics
Construction and Characteristics of
Power Diodes
• As mention in the introduction Power Diodes of largest
power rating are required to conduct several kilo amps of
current in the forward direction with very little power loss
while blocking several kilo volts in the reverse direction.
• Large blocking voltage requires wide depletion layer in
order to restrict the maximum electric field strength
below the “impact ionization” level. Space charge density
in the depletion layer should also be low in order to yield
a wide depletion layer for a given maximum Electric
fields strength. These two requirements will be satisfied
in a lightly doped p-n junction diode of sufficient width to
accommodate the required depletion layer.
• Such a construction, however, will result in a
device with high resistively in the forward
direction. Consequently, the power loss at the
required rated current will be unacceptably high.
• On the other hand if forward resistance (and
hence power loss) is reduced by increasing the
doping level, reverse break down voltage will
reduce. This apparent contradiction in the
requirements of a power diode is resolved by
introducing a lightly doped “drift layer” of
required thickness between two heavily doped p
and n layers as shown in Fig 2.3(c).
 Important specifications of a power Diode under reverse
bias condition usually found in manufacturer’s data sheet
• DC Blocking Voltage (VRDC): Maximum direct voltage
that can be applied in the reverse direction (i.e cathode
positive with respect to anode) across the device for
indefinite period of time. It is useful for selecting free-
wheeling diodes in DC-DC Choppers and DC-AC voltage
source inverter circuits.
• RMS Reverse Voltage (VRMS): It is the RMS value of the
power frequency (50/60 HZ) since wave voltage that can be
directly applied across the device. Useful for selecting
diodes for controlled / uncontrolled power frequency line
commutated AC to DC rectifiers. It is given by the
manufacturer under the assumption that the supply voltage
may rise by 10% at the most. This rating is different for
resistive and capacitive loads.
• Peak Repetitive Reverse Voltage (VRRM): This is the maximum
permissible value of the instantiations reverse voltage appearing
periodically across the device. The time period between two
consecutive appearances is assumed to be equal to half the power
cycle (i.e 10ms for 50 HZ supply).
• Peak Non-Repetitive Reverse Voltage (VRSM): It is the maximum
allowable value of the instantaneous reverse voltage across the
device that must not recur. Such transient reverse voltage can be
generated by power line switching (i.e circuit Breaker opening /
closing).
 Forward Bias
• The voltage dropt across a forward conducting power diode has two
components i.e
• Vak = Vj + VRD (2.2)
• Where Vj is the drop across the p+ n- junction and can be
calculated from equation (2.1) for a given forward current jF. The
component VRD is due to Ohmic drop mostly in the drift region.
Detailed calculation shows
• VRD ∞ JF WD (2.3)
• Where JF is the forward current density in the diode and WD is the
width of the drift region. Therefore
• Vak = Vj + RON IF
• Important specifications of a power Diode under forward bias
condition usually found in manufacturer’s data sheet

• Maximum RMS Forward current (IFRMS): Due to predominantly

resistive nature of the forward voltage drop across a forward biased
power diode, RMS value of the forward current determines the
conduction power loss. The specification gives the maximum
allowable RMS value of the forward current of a given wave shape
(usually a half cycle sine wave of power frequency) and at a
specified case temperature. However, this specification can be used
as a guideline for almost all wave shapes of the forward current.

• Maximum Average Forward Current (IFAVM): Diodes are often

used in rectifier circuits supplying a DC (average) current to be load.
In such cases the average load current and the diode forward
current usually have a simple relationship. Therefore, it will be of
interest to know the maximum average current a diode can conduct
in the forward direction. This specification gives the maximum
average value of power frequency half cycle sine wave current
allowed to flow through the diode in the forward direction.
• Average Forward Power loss (PAVF): Almost all power loss in a
diode occurs during forward conduction state. The forward power
loss is therefore an important parameter in designing the cooling
arrangement.

• Surge and Fault Current: In some rectifier applications a diode

may be required to conduct forward currents far in excess of its
RMS or average forward current rating for some duration (several
cycles of the power frequency). This is called the repetitive surge
forward current of a diode. A diode is expected to operate normally
after the surge duration is over. On the other hand, fault current
arising due to some abnormality in the power circuit may have a
higher peak valve but exists for shorter duration (usually less than
an half cycle of the power frequency). A fault current is a non
repetitive surge current. Power diodes are capable of withstanding
both types of surge currents.
 Reverse Recovery Time
• ta is due to the charge stored in the
depletion region of the junction and
represents the time between zero crossing
and peak reverse current.
• tb is due to the charge stored in bulk
semiconductor material and represents the
time between peak reverse current to 25%
of peak reverse current.
• trr=ta+tb
• Where as ta/tb is the softness factor (SF)
 Reverse Recovery Charge
• Qrr is the amount of charge carriers that
flow across the diode in reverse direction
due to the changeover from forward to
reverse condition.

• Qrr=area enclosed by reverse recovery

current