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Bipolar Junction Transistor

This document discusses the bipolar junction transistor (BJT). It describes the structure of a BJT, including its emitter, base, and collector regions. It also explains the forward and reverse bias conditions of a BJT. The document outlines how to analyze a BJT using collector, emitter, and base currents and voltages. It defines the cutoff and saturation conditions for a BJT and provides examples and related problems.

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33 views8 pages

Bipolar Junction Transistor

This document discusses the bipolar junction transistor (BJT). It describes the structure of a BJT, including its emitter, base, and collector regions. It also explains the forward and reverse bias conditions of a BJT. The document outlines how to analyze a BJT using collector, emitter, and base currents and voltages. It defines the cutoff and saturation conditions for a BJT and provides examples and related problems.

Uploaded by

Hana hana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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4.

Bipolar Junction Transistor


CONTENTS

01 Structure of BJT
02 Forward-Reverse Bias of BJT
03 Circuit Analysis of BJT
04 Condition in Cutoff and Saturation
05 Examples and Related Problems

2
01Structure of BJT
• The basic structure of the bipolar junction transistor (BJT) determines its operating
characteristics. Semiconductive materials are used to form a BJT.
• The BJT is constructed with three regions: emitter, base, and collector.
• There two types of BJT: two n regions separated by a p region (npn), and two p
regions separated by an n region (pnp).
• The pn junction joining the base region and the emitter region is called the base-
emitter junction. The pn junction joining the base region and the collector region is
called the base-collector junction.
• Construction of BJT is shown in figure(a) and symbols of BJT are shown in figure(b).

3
01 Cont’d

(npn) (pnp) (npn) (pnp)

(a) (b)

Figure: (a) Construction of BJT and (b) Symbols of BJT


7
02 Forward-Reverse Bias of BJT
• For both npn and pnp BJTs, the base-emitter (BE) junction is forward-biased and the
base-collector (BC) junction is reverse-biased. This condition is called forward-
reverse bias.

Figure: Forward-reverse bias of a BJT


4
03 Circuit Analysis of BJT
 
• Three transistor dc currents and three dc voltages can be identified to analysis BJT.
: dc base current
: dc emitter current
: dc collector current
: dc voltage at base with respect to emitter
: dc voltage at collector with respect to base
: dc voltage at collector with respect to emitter

(a) (b)

5
04 Condition in Cutoff and Saturation
Condition in Cutoff
• A transistor is in the cutoff region when the base-emitter
junction is not forward-biased. Neglecting leakage current, all
of the currents are zero.

Condition in Saturation
• When the base-emitter junction is forward-biased and there
is enough base current to produce a maximum collector
current, the transistor is saturated.

6
05 Examples and Related Problems
Examples >> 4-1, 4-2, 4-5, 4-6, 4-9, 4-10
Related Problems >> 4-1, 4-2, 4-5, 4-9, 4-10

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