Unit 2 First Class Ece

UNIT 2
SMALL-SIGNAL HYBRID-Π
EQUIVALENT CIRCUIT OF BIPOLAR
TRANSISTOR (BJT)
Department of Electronics and Communication Engineering
Subject Code : EC8351 Year/ Sem : II / III

Subject Name : Electronic Circuits I
1
SMALL SIGNAL HYBRID- EQUIVALENT
CIRCUIT OF BIPOLAR TRANSISTOR
• Need to develop a small-signal equivalent circuit -- use
hybrid- model because is closely related to the physic of
transistor.
• Treat transistor as two-port network.
2
SMALL SIGNAL HYBRID- EQUIVALENT CIRCUIT
OF BIPOLAR TRANSISTOR
2-PORT SYSTEM
3
SMALL SIGNAL HYBRID-Π EQUIVALENT CIRCUIT
OF BIPOLAR TRANSISTOR CONT..
• Based on 2-port network, 1 input port and 1 output port

shorted together to form a common port of both input and
output.
• Transistor has input and output ports shorted (emitter)
resulting a small-signal 2-port hybrid- π network.
• Figure shows iB vs. vBE with
small-time varying signal
superimposed at Q-pt.
• Since sinusoidal signals are

small, the slope at Q-pt treated
as a constant, has units of
conductance.
• The inverse of this conductance

is small-signal resistance, rπ
5
• We can relate small-signal input base current to small-signal input
voltage by:
v be  i b r
• Finding rπ from Q-point slope lead to:
v be VT  VT
 r  
ib I BQ I CQ
• rπ also known as diffusion resistance and is a function of Q-point
parameters. VT is known as thermal voltage. 6

• Now, we consider the output terminal characteristic of BJT.
• Assume o/p collector current is independent of collector-emitter

voltage collector-current is a function of base-emitter voltage,
so the equation:
i C
i C  .v BE
v BE Q  pt
• From eq 5.2 in Chapter 5 Neaman,
 v BE 
iC  I S exp 
 VT 
7
• After substitution and rearrange the above, we obtain:
• The term ICQ / VT is a conductance. Since this term relates current

in collector to a voltage in B-E circuit, it is called
transconductance and is written:
iC 1  v BE  I CQ
 . I S exp  
v BE Q  pt
VT  VT  Q  pt VT
• Transconductance also a function of Q-pt parameters and directly

proportional to dc bias current.
I CQ
gm 
VT
8
SMALL-SIGNAL HYBRID- EQUIVALENT CIRCUIT
USING TRANSCONDUCTANCE
gm=ICQ/VT
r=VT/ICQ
Transconductance parameter
9
• We can relate small-signal collector current to small-signal base
current for o/p of equivalent circuit.
i C
ic  .i b
i B Q  pt
• Where
i C

i B Q  pt
• β is called ac common-emitter current gain.
• Thus:
i c  i b
10
ib
(Ib )

Current gain parameter

11
Small-signal voltage gain cont..
• Combine BJT equivalent cct to ac equivalent cct.
Small-signal hybrid-π model
12
• Voltage gain, Av = ratio of o/p voltage to i/p voltage.
• Small-signal B-E voltage is called the control voltage, Vbe or V.
• The dependent current source is gmV flows through RC produce

–ve C-E voltage at the output.
Vo  Vce   g mVbe  RC
13
• From the input portion of the circuit, using voltage divider:
 r 
• The small-signal Vbe  
voltagegain is: Vs
 r  RB 
Vo  r 
Av    g m RC   
Vs  r  RB 
14
Example 1
Given :  = 100, VCC = 12V
VBE = 0.7V, RC = 6k,
VT=0.026V, RB = 50k and
VBB = 1.2V
Calculate the small-signal
voltage gain.
15
Solutions
VBB  VBE ( on ) 1.2  0.7

1. I BQ    10 A
RB 50
2.
I CQ  I BQ  100(10A)  1 mA
3.
VCEQ  VCC  I CQ RC  12  (1)(6)  6 V
4.
VT (100)(0.026)
r    2.6 k
I CQ 1
5.
I CQ 1
gm    38.5 mA / V
6. VT 0.026
Vo  r 
Av    g m RC     11 .4
Vs  r  RB  16
Example 2
• Given VCC=5V, VBB=2V, RB=650kΩ, RC=15kΩ, β=100

and VBE(on)=0.7V.
• Determine:
a) Q-points,
b) gm and r
c) voltage gain.
17
HYBRID-Π EQUIVALENT CIRCUIT INCLUDING
EARLY EFFECT
Early Voltage
(VA)
18
• Figure above show current-voltage characteristic for constant
values of B-E voltage.
• The curves are linear with respect to C-E voltage in forward-
active mode.
• The slope is due to base-width modulation effect  Early Effect.
• When the curves extrapolated at zero current, they meet a point
on –ve voltage axis, vce = -VA. VA --- Early voltage with typical
value in range of 50 < VA < 300V.

19
• Early Effect => collector current, iC is dependent to collector-
emitter voltage, vCE (refer Chapter 5-Neaman):
  v BE   v CE 
iC  I S exp  . 1  
  VT   VA 
• The output resistance, rO:
v CE
rO 
i C Q  pt
• Substitute and rearrange both equation,

1   v BE  1 I CQ
 I S exp  . 
rO   VT  V A Q  pt
VA
20
• Hence, small-signal transistor output resistance, rO become:
VA
rO 
I CQ
• rO is equivalent to Norton resistance  rO is parallel with
dependent current sources.
21
MODIFIED BIPOLAR EQUIVALENT CIRCUITS
INCLUDING RO DUE TO EARLY EFFECT.
Transconductance
parameter
ro=VA/ICQ
Current gain
parameter
22
EXPANDED HYBRID-Π EQUIVALENT
CIRCUIT
• Include 2 additional resistance, rb and rμ.
• rb  series resistance of semiconductor

material.
• Since rb << rμ., rb is neglected (short cct)
at low freq.
• rμ  reverse-biased diffusion resistance

of B-C junction. Typically in megaohms
and neglected (open cct).
• Normally, in hybrid-π model, we

neglect both rb and rμ. 23
OTHER SMALL-SIGNAL PARAMETERS
-H PARAMETER
• h-parameter -> relate small-signal terminal currents and
voltages of 2-port network.
• The linear r/ship between terminal currents and voltages are:
•
V be  hie I b  hreV ce Equation 1
• Where: I c  h fe I b  hoeV ce Equation 2
• i for input
• r for reverse
• f for forward
• o for output
• e for common-emitter
• Equation 1: KVL at input, hie in series with dependent voltage
source, hreVce
• Equation 2: KCL at output, hoe is in parallel with dependent 24
h-parameter
Common-emitter transistor h-parameter model of C-E BJT
25
h-PARAMETER
h-parameter in relation with hybrid-π are shown below:
26

Unit 2 First Class Ece

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UNIT 2

Department of Electronics and Communication Engineering

Subject Code : EC8351 Year/ Sem : II / III

• Based on 2-port network, 1 input port and 1 output port

• Since sinusoidal signals are

• The inverse of this conductance

• rπ also known as diffusion resistance and is a function of Q-point

parameters. VT is known as thermal voltage. 6

• Assume o/p collector current is independent of collector-emitter

• From eq 5.2 in Chapter 5 Neaman,

• The term ICQ / VT is a conductance. Since this term relates current

• Transconductance also a function of Q-pt parameters and directly

• β is called ac common-emitter current gain.

Current gain parameter

• Combine BJT equivalent cct to ac equivalent cct.

Small-signal hybrid-π model

• Small-signal B-E voltage is called the control voltage, Vbe or V.

• The dependent current source is gmV flows through RC produce

VBB  VBE ( on ) 1.2  0.7

• Given VCC=5V, VBB=2V, RB=650kΩ, RC=15kΩ, β=100

values of B-E voltage.

• The curves are linear with respect to C-E voltage in forward-

• The slope is due to base-width modulation effect  Early Effect.

• When the curves extrapolated at zero current, they meet a point

value in range of 50 < VA < 300V.

emitter voltage, vCE (refer Chapter 5-Neaman):

• The output resistance, rO:

• Substitute and rearrange both equation,

• rO is equivalent to Norton resistance  rO is parallel with

dependent current sources.

• rb  series resistance of semiconductor

• Since rb << rμ., rb is neglected (short cct)

• rμ  reverse-biased diffusion resistance

• Normally, in hybrid-π model, we

Common-emitter transistor h-parameter model of C-E BJT

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