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Fermi Function: I A D A D

The Fermi function describes the carrier concentrations in a semiconductor as a function of doping levels and temperature. It relates the electron and hole concentrations to the donor and acceptor dopant concentrations. The document also defines key equations for drift and diffusion currents, electric field, mobility, carrier lifetimes and diffusion lengths. It describes the basic operation and characteristics of a PN junction, MOS capacitor and MOSFET transistor.

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0% found this document useful (0 votes)
55 views3 pages

Fermi Function: I A D A D

The Fermi function describes the carrier concentrations in a semiconductor as a function of doping levels and temperature. It relates the electron and hole concentrations to the donor and acceptor dopant concentrations. The document also defines key equations for drift and diffusion currents, electric field, mobility, carrier lifetimes and diffusion lengths. It describes the basic operation and characteristics of a PN junction, MOS capacitor and MOSFET transistor.

Uploaded by

JesusSQA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Fermi Function

1/ 2
 N D  N A   N D  N A  
2

n      ni 
2

 2   2  
1/ 2
 N A  N D   N A  N D  
2

p      ni 
2

 2   2  

J p|drift  q  p  Vdp J n|drift  q  n  Vdn    q n  n  p   p 


R 
J p|drift  q  p   p E J n|drift  q  n   n E A 1 1
 
 q n  n  p   p 
dp dn
Jp | diff   q  Dp  Jn | diff  q  Dn 
dx dx

1 dEc 1 dEi 1 dEv 1


E  field    V   Ec  EREF 
q dx q dx q dx q
dV
E  field  
dx

Dn kT Dp kT
 
n q p q

p
t
 
p
P
d p n
dt
 Dp 
d 2 pn pn
dx 2

p
 Gˆ p  Rˆ p   Lp  D p p

n
t
 
n
n
dn p
dt
 Dn 
d 2 n p
dx 2

n p
n

 Gˆ n  Rˆ n  Ln  Dn n
KT  N D N A 
Vbi   FN   FP   ln  2

q n
 i 
p-side n-side
qNa qNd
 ( x)   (x  xp )  ( x)   ( xn  x )
s s

qNa qNd
V ( x)   ( x)  ( x  x p )2 V ( x)   ( x)  Vbi  Va   ( xn  x ) 2
2 s 2 s

 2 Nd  Vbi  Va    2 Na  Vbi  Va  
1/ 2 1/ 2

xp   s   xn   s  
 q Na  ( Na  Nd )   q Nd  ( Na  Nd ) 

 2 ( Na  Nd )  Vbi  Va  
1/ 2

W  xn  x p   s  
 q Nd  Na 

 Dp 

C' s 2
( F / cm ) JTOT  q pno 
Dn

n po   e qVa / KT  1 
W  Lp Ln 

n-type p-type

M >  S rectifying ohmic

M <  S ohmic rectifying


Mode of Operation P-type N-type

Accumulation Vg < 0 fS < 0 Vg > 0 fS > 0

Depletion VTN > Vg > 0 2fF > f S > 0 VTP < Vg < 0 2 fF < f S < 0

Onset of Inversion VTN = Vg 2 fF = f S VTP = Vg 2 fF = f S

Inversion VTN < Vg 2 fF < f S VTP > Vg 2 fF > f S

1
qN AW (S )
 2  2 Vg   S  p  type
W  W (S )   Si S  p  type Cox
 qN A  qN DW (S )
Vg   S  n  type
Cox
1
 2  2
W  W (S )   Si S  n  type
 qN D 

1/ 2 Inversion and Accumulation C 'MOS C  Cox


 2 
W  WT   Si 2F  p  type
Depletion
 qN A 
1/ 2
 2   1 1 
1
 Si
W  WT   Si 2F  n  type C 'MOS C     C DEP 
 Cox C DEP W (S )
 qN D  

Cutoff: Vgs < VTN


ON: Vgs > VTN
ID 
W
L

 nCox Vgs  VTN Vds  12 Vds 2 
Linear: Vds < Vgs-VTN
Saturation: Vds > Vgs-VTN

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