The document discusses semiconductors and their properties. It explains that semiconductors have conductivity between conductors and insulators. Semiconductors can be intrinsic, consisting of pure materials like silicon, or extrinsic through doping with impurities. Doping creates either N-type semiconductors with excess electrons or P-type with excess holes. The movement of electrons and holes in response to electric fields enables the flow of current in semiconductors. The position of the Fermi level determines whether a semiconductor acts as N-type or P-type.
The document discusses semiconductors and their properties. It explains that semiconductors have conductivity between conductors and insulators. Semiconductors can be intrinsic, consisting of pure materials like silicon, or extrinsic through doping with impurities. Doping creates either N-type semiconductors with excess electrons or P-type with excess holes. The movement of electrons and holes in response to electric fields enables the flow of current in semiconductors. The position of the Fermi level determines whether a semiconductor acts as N-type or P-type.
The document discusses semiconductors and their properties. It explains that semiconductors have conductivity between conductors and insulators. Semiconductors can be intrinsic, consisting of pure materials like silicon, or extrinsic through doping with impurities. Doping creates either N-type semiconductors with excess electrons or P-type with excess holes. The movement of electrons and holes in response to electric fields enables the flow of current in semiconductors. The position of the Fermi level determines whether a semiconductor acts as N-type or P-type.
The document discusses semiconductors and their properties. It explains that semiconductors have conductivity between conductors and insulators. Semiconductors can be intrinsic, consisting of pure materials like silicon, or extrinsic through doping with impurities. Doping creates either N-type semiconductors with excess electrons or P-type with excess holes. The movement of electrons and holes in response to electric fields enables the flow of current in semiconductors. The position of the Fermi level determines whether a semiconductor acts as N-type or P-type.
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Nautical Electronics
Semiconductors & Diodes
UNIT 1
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Introduction Electronic devices and circuits deal with the study of mostly semiconductor devices and their associated concepts.
Based on the electrical conductivity, the materials in nature are
classified into three types: Conductors, Insulators and Semiconductors.
Conductors are those having very good conductivity.
Insulators are those having very poor conductivity.
Semiconductors are those having conductivity(resistivity) level
between conductor and insulator.
Dr.G.Veera Senthil Kumar
Contd... Properties of Semiconductors:
Semiconductors have the resistivity which is less than insulators
and more than conductors.
Semiconductors have negative temperature co-efficient. The
resistance in semiconductors, increases with the decrease in temperature and vice versa.
The conducting properties of a Semiconductor changes, when a
suitable metallic impurity is added to it, which is a very important property.
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Energy band structure of materials
Figure(a) represents the insulator in which the forbidden energy gap is
large. e.g. diamond (Eg=6eV)
Figure(b) represents the semiconductor in which the forbidden energy gap
is about 1eV. e.g. For Ge, Eg = 0.785 eV and for Si, Eg = 1.21 eV
Figure(c) represents the conductor in which there is no forbidden energy
gap.
Dr.G.Veera Senthil Kumar
Semiconductors Most of the electronic devices are made from semiconductor materials.
Semiconductors are of two types: Intrinsic and extrinsic semiconductors
Dr.G.Veera Senthil Kumar
Contd... A pure form of semiconductor is called an intrinsic semiconductor. e.g. Silicon(Si)and Germanium(Ge). Other examples: Gallium Arsenide (GaAs), Indium Antimonide (InSb),etc
But intrinsic semiconductor finds less applications
because of less conduction at room temperature.
In semiconductor, the conduction is due to both
electrons and holes.
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Condcution in Semiconductors
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Contd... Due to the thermal energy supplied to the crystal, some electrons tend to move out of their place and break the covalent bonds. These broken covalent bonds, result in free electrons which wander randomly. But the moved away electrons creates an empty space or valence behind, which is called as a hole. These holes are assumed to be positive charge and moving ina direction opposite to that of electrons. The movement of holes constitute the current in semiconductor is called hole current.
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Seimconductors(Contd…) To increase the conductivity of intrinsic semiconductor, doping is done. The result is extrinsic semiconductor.
Doping is the process of adding impurity to an intrinsic semiconductor.
The impurities added, are generally pentavalent and trivalent impurities.
Extrinsic semiconductors are of two types: P-type and N-type.
Adding pentavalent impurities(donor) such as phosphorous, arsenic and antimony to get N-type semiconductor. It increases the number of electrons than that of holes.
Adding trivalent impurities(acceptor) such as boron or aluminium to get P-
type. It increases the number of holes than that of electrons.
Dr.G.Veera Senthil Kumar
N-Type Semiconductor Arsenic atom is added to the germanium atom, four of the valence electrons get attached with the Ge atoms while one electron remains as a free electron.
In N-type extrinsic semiconductor, as the conduction takes
place through electrons, the electrons are majority carriers and the holes are minority carriers. Dr.G.Veera Senthil Kumar, Assistant Professor, IMU P-Type Extrinsic Semiconductor Boron atom is added to the germanium atom, three of the valence electrons get attached with the Ge atoms, to form three covalent bonds. But, one more electron in germanium remains without forming any bond. As there is no electron in boron remaining to form a covalent bond, the space is treated as a hole.
In P-type extrinsic semiconductor, as
the conduction takes place through holes, the holes are majority carriers while the electrons are minority carriers.
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Conductivity of Semiconductor In an intrinsic semiconductor, the number of electrons is equal to the number of holes.
At room temperature, we can find few electrons and holes. They
move in opposite direction in an electric field E.
Further, electrons move with its mobility μn and holes move with mobility μp.
Let the number of electrons be n and number of holes be p
The total current density in an intrinsic semiconductor is J = Jn + Jp = qnμnE + qpμp E = σE where the conductivity, σ = (nμn+pμp)q and q is the charge
Dr.G.Veera Senthil Kumar
Conductivity of Semiconductor(Contd…) In case of extrinsic semiconductor, the conductivity of an N-type semiconductor is is σn = nμnq the conductivity of an P-type semiconductor is is σp = pμpq
Dr.G.Veera Senthil Kumar
Fermi level in semiconductors The highest energy level that an electron can occupy at the absolute zero temperature is known as the Fermi Level. Fermi level in intrinsic semiconductor: Fermi level is at the middle of the forbidden energy gap. Fermi level in Extrinsic semiconductor is shown below:
Dr.G.Veera Senthil Kumar,
Assistant Professor, IMU Movement of Fermi level(EF) with Temperature
In a N-type semiconductor, at very high temperature, more number of
electrons and holes are formed.
Concentration of thermally generated electrons in the conduction band is far
greater than concentration of donor electrons.
Hence, number of holes become equal to the number of electrons.
Semiconductor becomes intrinsic and EF returns to the middle of the
forbidden energy gap.
Hence it is concluded that as temperature of P-type or N-type semiconductor
increases, EF progressilvely moves towards the middle of the forbidden gap.