Microwave Devices and Systems

Chapter 1
Introduction to Microwave
Engineering
Introduction
Microwaves are electromagnetic waves whose frequency lies
between radio waves and infrared waves (300 MHz and 300 GHz).
Its wavelengths in air ranges from 100cm -1mm).

MICROWAVE ELECTRO MAGNETIC SPECTRUM

IEEE Microwave frequency bands
Designation Frequency range
Medium frequency (MF) 300 kHz-3 MHz
High frequency (HF) 3MHz-30MHz
Very high frequency (VHF) 30MHz-300MHz
Ultra high frequency (UHF) 300MHz-1GHz
L band 1GHz-2GHz
S band 2GHz-4GHz
C band 4GHz-8GHz
X band 8GHz-12GHz
Ku band 12GHz-18GHz
K band 18GHz-27GHz
Ka band 27GHz-40GHz
Millimeter 40GHz-300GHz
Sub millimeter >300GHZ
 Properties of Microwaves
1. Microwave are waves that radiate electromagnetic energy with
shorter wavelength. Wavelength is related to frequency by:

Wavelength*Frequency=Velocity of light
2. Microwaves travel in a straight line and are reflected by the
conducting surfaces.
3. Microwaves are absorbed by dielectric materials.
4. Microwaves are easily attenuated within short distances.
5. They are not reflected by ionosphere
6. Microwave currents flow through a thin outer layer of an
ordinary cable.
 Advantages of Microwaves:
There are many advantages of Microwaves such as the following −
• Supports larger bandwidth and hence more information is transmitted.
For this reason, microwaves are used for point-to-point communications.
• More antenna gain is possible.
• Higher data rates are transmitted as the bandwidth is more.
• Antenna size gets reduced, as the frequencies are higher.
• Low power consumption as the signals are of higher frequencies.
• Effect of fading gets reduced by using line of sight propagation.
• Provides effective reflection area in the radar systems.
• Satellite and terrestrial communications with high capacities are
possible.
• Low-cost miniature microwave components can be developed.
• Effective spectrum usage with wide variety of applications in all
available frequency ranges of operation.
 Disadvantages of Microwaves:
There are a few disadvantages of Microwaves such as the following −
• The higher the frequency, the more difficult it becomes to analyze and
design electronic circuits.
-wave analysis rather than circuit analysis
• It is difficult to implement conventional circuit components (resistors,
capacitors, inductors, and so on) at microwave frequencies.
-existence of stray and distributed reactances – residuals
• Transient time is more critical at microwave frequencies.
-the amount of time it takes for the current carriers to move through
the device
• Cost of equipment or installation cost is high.
• They are hefty and occupy more space.
• Electromagnetic interference may occur.
• Variations in dielectric properties with temperatures may occur.
• Inherent inefficiency of electric power.
 
Need for microwave devices:
At the microwave frequencies conventional transistors, IC’s and wiring won’t
work due to
1. Lead reactance
2. Transit time
1. Lead reactance
 A 10V ac oscillator is connected to a 50 Ω resistor by a copper wire (L=2.5 cm,
D=1mm). It has a dc resistance of 0.4 mΩ and an inductance of 0.027 µH.

 For low frequency electronics is negligible compared with 50 Ω load resistor.

The inductive reactance of the wire is . This X increases with frequency. So almost
all of the oscillator voltage is dropped across the connecting wire and never gets to
the load resistor
Example: = 6MHz ; X=1 Ω, = 6GHz ; X = 1000 Ω
Because of lead reactance conventional devices (wires) cannot be used to connect
microwave devices. Special microwave transmission lines are required to conduct the
microwave signal from one part of the equipment to another.
 … Cont’d
2. Transit time
 Transit time is the time required for electrons to travel from the
cathode to the plate. At low frequency, the transit time is very
negligible. But, however at higher frequencies, transit time
becomes an appreciable portion of a signal cycle which results in
decrease in efficiency of device.
 In the FET, a change in gate voltage produces a change in the
electron flow from the source to drain with a finite time (transit
time).
 At microwave frequencies this finite (transit) time becomes a
large fraction of the cycle.
 Because of the lead reactance and transit time problems, special
microwave devices must be used in place of the wiring,
transistors, and Ics of low frequency electronics.
 Difference between Conventional and
RF/Microwave Bands
Low Frequency/ Conventional RF/Microwaves
 Bandwidths are limited hence  Provide large bandwidth so its
small no. of channels can be possible to adjust large no. of
adjusted. channels.
 It uses lumped element circuit  It uses distributed circuit
theory.
theory.
 Current flow and voltage drops
 Scattering phenomena like
are used to calculate power.
absorption, reflection,
 Open wire, twisted cables, co-
axial cables are used as
refraction, etc. are used in
transmission lines. power calculation.
 Optical fibers, waveguides, strip
lines, micro-strip lines are
common transmission lines.
 …Cont’d
Low Frequency/ Conventional RF/Microwaves
 Lumped circuit elements  Cavity resonators or resonant
are used such as resistors, lines are used as oscillators,
resonators, etc.
filters, oscillators, etc.
 Density modulation or velocity
 It uses current modulated modulation are used using
mode. magnetrons, klystrons, TWTs,
 Almost all the solid state etc.
devices can be used.  Vacuum tube like devices, micro-
 It can handle low power. miniaturised solid state devices
like Gunn diodes, tunnel diodes,
IMPITT, TRAPPIT, etc. are used.
 It can handle higher power.
11
 Application of Microwave systems
The application areas are many can be categories in different ways.

1. Communication 3. Radar
 UHF TV  Search
 Microwave relay  Airport traffic control
 Navigation
 Satellite
 Tracking
communication
 Fire control
 Troposcatter  Radar altimeter
communication  Velocity measuring
 Mobile radio 4. Microwave heating
 Telemetry  Industrial heating
2. Electronics jammers  Home microwave ovens
 Basic Microwave System
Block diagram of a microwave system:
 1. Microwave transmission lines
 The three basic types of microwave transmission lines are
i) Coaxial cable
ii) Waveguide
iii) Microstripline
 2. Signal control components
A variety of special signal control devices must be used at
microwave frequencies such as attenuators, phase shifters,
cavities, couplers, filters, loads, circulators, isolators and
switches.

3. Semiconductor amplifiers and oscillators

Microwave oscillators and low power amplifiers are made
from 6 types of transistor-like devices,
1. Bipolar Junction Transistors (BJT)
2. Field-effect Transistors (FET)
3. High Electron Mobility Transistors (HEMT)
4. Varactor multipliers
5. IMPATTs
 4. Microwave Tubes
 The power capabilities of microwave semiconductor
devices are limited. Most microwave systems need
more power than semiconductor sources can provide,
so microwave amplifier tubes are required
 The various microwave tubes are
1. Magnetron
2. Klystron
3. Helix travelling wave tube (TWT)
4. Coupled-cavity TWT
5. Crossed-field amplifier (CFA)
6. Gyrotron
 5. Microwave Antennas
Microwave antennas are used to transmit and receive
microwaves.
 The most common microwave antenna is the parabolic dish.
 The antenna consists of a horn that radiates microwave onto
the parabolic surface of the dish, Where they are focused
into a narrow beam.
 By making the dish big enough or the wavelength small
enough, the beam width of a Microwave antenna can be
only a fraction of a degree.
6. Low noise microwave receivers
 The major requirement of a low noise receiver is that it
amplify the very weak received microwave signal without
increasing the noise level.
 Skin depth/depth of penetration
 Microwave travel inside the transmission line as electric and
magnetic fields
 They are not carried in the metal walls of the transmission lines
but in the space between the walls.
 If the walls were made of perfect conductors, the microwave
would not penetrate at all into the walls of the guide.
 However the walls are not perfect conductors, so the microwave
fields penetrate slightly into the walls.
 The depth to which they extend is called skin depth.
 The skin depth depends on the frequency of the microwaves and
the material of the transmission line walls.
 Skin depth is defined as the distance in the walls at which the
fields have decreased to 36.8% of their value at the surface.
 Insertion loss and Return loss
Insertion loss describes the reduction of a microwave signal as it
passes through a component.
Whenever a microwave transmission line is connected to a microwave
device, the electric and magnetic fields in the transmission line and in
the device do not match, so some of the microwave power is reflected at
the connection. This reflected power is specified by return loss.
Microwave power is sent down a transmission line to a microwave
component (may be a filter, isolator, attenuator, amplifier). This power is
the incident power.
When it reaches the component, a portion is reflected back down the
transmission line and never enters the component because microwave
field configurations in the transmission line and the component are
different. Unless two identical sections of transmission lines, or two
identical components are being connected, not all of the power will get
from the transmission line into the microwave component.
The power not reflected gets into the component. There some of it gets absorbed and
the remainder passes through the component into the transmission line on the other
side. The power that actually comes out of the component is called the transmitted
power, and it is less than the incident power for two reasons:
(1)Some of the power got reflected and never got into the component in the first
place
(2)Some of the power that entered the component was absorbed inside.
The ration of the transmitted power to the incident power, in dB
terminology, is the insertion loss.
The ratio of the reflected power to the incident power, in dB
terminology, is the return loss.
 Gain
If the component is an amplifier, then the transmitted power from the
component is greater than the incident power because the incident
power is amplified. Therefore, the ratio of the transmitted power to the
incident power is defined as the gain of the amplifier.
Figure below shows input power entering an amplifier, being amplified,
and output power leaving the amplifier.
The terms input power or incident power can be used interchangeably,
and the terms output or transmitted power can be interchanged.

The gain of the amplifier is the output power divided by the input power.
 Microwave Network Analysis
 A microwave network is formed when several microwave devices
are connected together by transmission lines for transmission of
microwave signals.
 RF and microwave circuits can be considered using network
analysis or field analysis, depending on what is more suitable for
the considered situation.
 Analyzing the microwave circuit, we must obtain the equivalent
voltages and currents. 
 If we will consider the random wave, it can be divided into the
constituents, so the electromagnetic field also divides positive and
negative constituents, and hence the equivalent voltage and current
can be presented and divided into constituents : V+, V-, I+,I-

23
 1. Impedance and Admittance Matrices
 For n ports network we can relate the voltages and currents
by impedance and admittance matrices

tN: terminal plane

providing the phase
reference for V, I
The total voltage and
current on the n-th
port:

Vn =Vn+ +Vn-
I n =I n+ - I n-
An arbitrary N-port microwave network
 The impedance matrix [Z] of the microwave network then
relates these voltages and currents:
V1   Z 11 Z 21 . . Z n1   I 1 
V   Z 12 Z 22 . . Z n 2   I 2 
 2 
 .  . . . . . . V    Z  I 
 .  . . . . . .
 
  
Vn   Z 1n Z 2n . . Z nn   I n 
 Similarly, we can define an admittance matrix [Y] as [Z ] =[Y ]- 1

 I1  Y11 Y21 . . Yn1  V1 

 I  Y12 Y22 . . Yn 2  V 
 2   2  I   Y V 
 .  . . . . .   . 
 .  . . . . . 
  
    . 
 I n  Y1n Y2 n . . Ynn  Vn   Z Y   U 

The [Z] and [Y] matrices are the inverse of each other.
 Note that both [Z] and [Y] matrices relate the total
port voltages and currents.
Y    Z  1
 Zij can be found as:
Vi
Z ij 
Ij
I k  0 , for k  j

 Yij can be found as:

Ii
Yij 
Vj
Vk  0 , for k  j

 which states that Yij can be determined by driving port

j with the voltage Vj, short-circuiting all other ports
(so Vk = 0 for k ≠ j) and measuring current at port i.
 Reciprocal Networks
 If a network does not contain non-reciprocal devices or
materials* (i.e. ferrites, or active devices), then the network is
“reciprocal.”
 it can be seen that the impedance and admittance
matrices are symmetrical, so that
Note: The inverse of a
Z ij  Z ji and Y ij  Y ji symmetric matrix is symmetric.
[Z] and [Y] are symmetric
Lossless Networks
 If the network is lossless, it can be seen that all the Zij
and Yij elements are purely imaginary.
 Either of these cases serves to reduce the number of
independent quantities or degree of freedom that an N-
port network may have.
Examples of matrices reflecting reciprocal
and symmetrical properties
18 6
1. .Z    Reciprocal but not symmetrical
 6 9 
 0.0692  0.0615
2. Y.     Reciprocal but not symmetrical
 0.0615 0.0769 

 99 20 
 
3. . Z    101 101


20

99
 Reciprocal but not symmetrical
 101 101 

0.05  0.05
4. .Y    Reciprocal & symmetrical
 0.05 0.05 
 
 Example 1:
Find the Z-parameters of the two-port network
shown below
Solution:
(a). Z11 can be found as the input
V1
impedance at port 1 when port 2 is Z11   Z A  ZC
open circuited I1 I 2 0

(b). The transfer impedance can be

found measuring the open-circuit V1 1 ZCV2
Z12    ZC
voltage at port 1 when a current I2 is I2 I 0
I 2 Z B  ZC
1

applied at port 2. (by voltage

division)
V2 1 ZCV1
(c). Z21 is found as Z21    ZC
I1 I1 Z A  ZC
(This proves that the network is I 2 0

reciprocal)
(d). Z22 is found as V2
Z 22   Z B  ZC
I2 I1 0
 Example 2:
Derive the [Z] and [Y] matrices for the two-
port network shown
Solution:
(a). Find Z11
 Z A (Z A  Z B ) 
I1  
V1  Z  Z  Z B Z A (Z A  Z B )
Z11   A A
  Z 22 (by symmetry)
I1 I 2 0
I1 2Z A  Z B

(b). Find Z21  ZA 

I1Z11  
V2  Z A  Z B   Z A ( Z A  Z B )  Z A 
Z 21     
I1 I
2 0
I1  2 Z A  Z B  Z A  Z B 
Z A2
Z 21   Z12 (by reciprocity)
2Z A  Z B

I1 I1 Z  ZB
Y11    A  Y22 (by symmetry)
V1 V 0  Z AZ B  Z AZ B
2 I1  
(c). Find Y11  Z A  ZB 
Example 2: Solution cont’d
(d). Find Y21

 V1
I2 ZB 1
Y21     Y12 (by reciprocity)
V1 V 0 V1 ZB
2

The answers can be checked by:

 Z Y   U 
 The ABCD Matrix
 In practice, many microwave networks consist of a cascade
connection of two or more two-port networks. In this case, it is
convenient to define a 2x2 transmission, or ABCD, matrix for
each two-port network.
 The ABCD matrix of the cascade connection of two or more than
two-port networks can be easily found by multiplying the ABCD
matrices of the individual two-ports.
 The ABCD matrix is defined for the two-port network in terms of
the total voltages and currents as follow:

V 1  AV 2  BI 2

I 1  CV 2  DI 2

V1   A B  V 2 
 I   C D   I 2 
 1 
Cascade connection of two two-port networks

V1   A1 B1  V 2  V 2   A2 B 2  V3 
 I   C D1   I 2   I   C D 2   I 3 
 1  1  2  2
 Substituting,

V1   A1 B1   A2 B 2  V3 
 I   C D1   C 2 D 2   I 3 
 1  1
 Cascaded network
I1a I2a I1b I2b

V1a a V2a V1b b V2b

V1a   Aa Ba   V2a  V1b   Ab Bb   V2b 

 I   C Da   I 2a   I   C Db   I 2b 
 1a   a  1b   b
However V2a=V1b and –I2a=I1b then
The main use of ABCD matrices are
V1a   Aa Ba   Ab Bb   V2b  for chaining circuit elements together
 I   C Da  Cb Db   I 2b 
 1a   a
Or just convert to one matrix Where
V1a   A B   V2b   A B   Aa Ba   Ab Bb 
 I   C D   I  C D   C Da  Cb Db 
 1a     2b     a
 Determination of ABCD parameters
V1  AV2  BI 2 I1  CV2  DI 2

Since A is independent of B, to determine A put I2 equal to zero and

determine the voltage gain V1/V2=A of the circuit. In this case port
2 must be open circuit.

V V1
A 1 for port 2 open circuit B for port 2 short circuit
V2  I2 V
I 2 0 2 0

I I1 for port 2 short circuit

C 1 for port 2 open circuit D
V2  I2 V
I 2 0 2 0

If the network is reciprocal, Z12=Z21, and AD-BC=1.

 ABCD matrix for series impedance
I1 I2
Z
V1 V2

V1 V1
A for port 2 open circuit B for port 2 short circuit
V2 I 2 0
 I2 V
2 0

V1= V2 hence A=1 V1= - I2 Z hence B= Z

I1 I1
C for port 2 open circuit D for port 2 short circuit
V2  I2 V
I 2 0 2 0

I1 = - I2 = 0 hence C= 0 I1 = - I2 hence D= 1

The full ABCD matrix can be written 1 Z 

0 1 
 
 ABCD for T impedance network
I1 I2
Z1 Z2

V1

Z3
V2

V1
A for port 2 open circuit
V2 I 2 0 Therefore

then Z3 V1 Z1  Z 3 Z1
V2  V1 A   1
Z1  Z 3 V2 Z3 Z3
 …cont’d
V1
B for port 2 short circuit Z1 I2
 I2 V
2 0

Z2 VZ2
Solving for voltage in Z2 Z3

Z2Z3
Z2  Z3
VZ 2  V1
Z2Z3
Z1  Hence
Z2  Z3
V1 ZZ
B  Z 2  Z1  1 2
But VZ 2   I 2 Z 2  I2 Z3
 …cont’d
Z1
I1 I2
I1
C for port 2 open circuit
V2 I 2 0
Z3 V2

Analysis

 I 2  I1
Therefore

I1 1
V2   I 2 Z 3  I1Z 3 C 
V2 Z 3
 …cont’d
I1
D for port 2 short circuit Z1 I2
 I2 V I1
2 0

Z2 V Z2
Z3
I1 is divided into Z2 and Z3, thus

 Z3
I2  I1
Z 2  Z3 Full matrix

Hence  Z1 Z1Z 2 
1  Z Z1  Z 2 
Z3 
D
I1
 1
Z2  2 
 I2 Z3  1 1
Z2 
 Z 3 Z3 
 Relationship to Impedance Matrix
• The impedance parameters of a network can be easily converted
to ABCD parameters.
• From the definition of the ABCD parameters, and from the
defining relation for the Z parameters for a two-port network

V1  I 1 Z 11  I 2 Z 12 V 2  I 1 Z 21  I 2 Z 22
ABCD parameters of some useful two-port networks
Z
1 Z 
Series impedance 0 1 
 

 1 0
Z Shunt impedance 1 
 Z 1

 Z1 Z1Z 2 
Z1 Z2 1  Z Z1  Z 2 
Z3 
 2 
T-network  1 1
Z2 
Z3  Z 3 Z3 

Z3
 Z3 
 1  Z3 
Z1 Z2 Z2
p-network  
 1  1  Z3 1
Z3 
 Z1 Z 2 Z1Z 2 Z1 
 The Scattering Matrix
At high frequencies, Z, Y, h & ABCD parameters are difficult
(if not impossible) to measure.
o V and I are not uniquely defined
o Even if defined, V and I are extremely difficult
to measure (particularly I).
o Required open and short-circuit conditions are
often difficult to achieve.

 Scattering (S) parameters are often the best

representation for multi-port networks at high frequency.
 The Scattering Matrix
Consider the N-port network

Vn+ , In+ is the amplitude of the voltage and current wave incident on port n.
Vn- , In- is the amplitude of the voltage and current wave reflected from port n.
 The Scattering Matrix
b1  0   S11a1  0   S12a2  0  Vi 
S ij  
b2  0   S21a1  0   S22a2  0  Vj
Vk  0 , for  k  j

b1  0  Output is
S11 
a1  0  a2  0
matched input reflection coef.
w/ output matched
b1  0  Input is
S12  reverse transmission coef.
a2  0  a1  0
matched
w/ input matched
b2  0 
S21  Output is forward transmission coef.
a1  0  a2  0
matched w/ output matched
b2  0  Input is
S22  output reflection coef.
a2  0  a1  0
matched
w/ input matched
48
 Example:
Find the scattering parameters of the 3 dB
attenuator with a 50 Ω Characteristic
impedance.
Solution:
(a). S11 can be found as the reflection coefficient seen at port 1 when port 2 is
terminated in a matched load (Zo = 50Ω)
V1 Z in(1)  Z 0
S11    (1)
 (1)
V1 V 2  0
V 2  0 Z in  Z 0 Z 0 on port 2

where:  141.8 8.56  50 

Z in  8.56     50 
141.8   8.56  50 
Hence,
S11  0  S 22 (by symmetry)
(b). S21 can be found by applying an incident wave at port 1, V1+, and measuring
the out coming wave at port 2, V2-. This is equivalent to the transmission
coefficient from port 1 to port 2.

V2
S 21  
V1 V 2  0
From the fact that S11 = S22 = 0, we know that V1- = 0 when port 2 is terminated
in Z0 = 50 Ω, and that V2+ = 0. In this case, V1+ = V1 and V2- = V2.
Example: solution cont’d.
(b). By applying a voltage V1 at port 1 and using voltage division twice, we find
V2- = V2 as the voltage across the 50 Ω load resistor at port 2.
  41.44  50 
V  V2  V1 
2    0.707V1
 41.44  8.56  50  8.56 

where:
41.44 
141.8 58.56
141.8  58.56
It is the resistance of the parallel combination of the 50 Ω load and the 8.56 Ω
resistor with the 141.8 Ω resistor.
Thus,
S12  S 21  0.707
If the input power is: V  2
1

Then the output power is: 2Z 0

V
2
 2
S V
21 1
 2
 0.707 2
V
1
 2
V1
 2

  
2Zthe
Which is one-half (-3 dB) of 2Zpower.
0 input 0 2Z 0 4Z 0
Conversion between Scattering and impedance parameters
For a N-ports network, assuming every port has the same
impedance and set Z0n = 1, we have
Vn =Vn+ +Vn-
I n =I n+ - I n- =Vn+ - Vn-

[Z ][I ] =[Z ][V + ] - [Z ][V - ] =[V ] =[V + ]+[V - ]

Þ ([Z ] +[U ])[V - ] =([Z ] - [U ])[V + ]
Þ [S] =[V - ][V + ]- 1 =([Z ] +[U ])- 1 ([Z ] - [U ])

1  0
Identity matrix [U ] =[    ]
0  1
 Reciprocal and Lossless Networks
 Scattering matrix for reciprocal networks is symmetric
 S    S t
 Scattering matrix for lossless networks is unitary
n 1 for i  j 
 S ki S kj* 
0

for i  j 
k 1
That is, for unitary matrix,

 S  t  S    U 
S 
  S t 1

 Example 1:
A two-port network is known to have the following
scattering matrix

(a). Determine if the network is reciprocal and lossless.

(b). If port 2 is terminated with a matched load, what is
the return loss seen at port 1?
(c). If port 2 is terminated with a short circuit, what is
the return loss seen at port1?
 Solution
(a1). Because [S] is not symmetric, the network is not reciprocal.
(a2). To be lossless, the scattering parameters must satisfy:
(For i = j)

Taking the first

n
column (i = 1),
 S ki Ski*  S11  S 21   0.15   0.85  0.745
2 2 2 2

k 1

Since it is not equal to 1, then the network is not lossless!

(b). When port 2 is terminated with a matched load, the reflection
S11 atport
coefficient seen  0.115is

 is20 log    20 log  0 . 15   16 . 5 dB

So the returnRLloss

(c). When port 2 is terminated with a short circuit, the reflection

coefficient seen at port 1 can be found as follows:
V2  atVport
For a short circuit 2

2:
Example 1: Solution
(c). From the scattering matrix:

The given scattering matrix has 2 x 2 dimension, then

V1  S11V1  S12V2  S11V1  S12V2 eq.1

V2  S 21V1  S 22V2  S 21V1  S 22V2 eq.2

From eq.2:
 S 21
V2  V1
Dividing eq. 1 by V1+ and1 using
S 22 the above result gives

V1
    S11 
S12 S 21
 0.15 
 
0.85  45o 0.8545o 
 0.452
V1 1  S 22 1  0.2
Example 1: Solution
(c). So the Return Loss is
RL  20 log   20 log 0.452  6.9 dB
An important point to understand about scattering
parameters is that reflection coefficient looking into port n
is not equal to Snn unless all other ports are matched (as
illustrated in the previous example).
Similarly,, the transmission coefficient from port m to port n
is not equal to Snm unless all other ports are matched.
Changing the terminations or excitations of a network does
not change its scattering parameters, but may change the
reflection coefficient at a given port, or the transmission
coefficient between two ports.
 Example 2:
Consider two two-port networks with individual scattering
matrices [SA] and [SB]. Show that the overall S21 parameter
of the cascade of these networks is given by
S 21A S 21B
S 21 
1 S 22A S11B
Solution
V1   

For [SA]:   S  
A V1
 
 A B

For [SB]:  B 
V    S  VA 
B

 2   2 
For overall network: V1  V1 
     S   
V 2  V 2 
Find S21:
V 2
S 21  
V1 V 2  0
From [SB]:
B  S 11B A  S 12B V 2 V 2  S 21B A  S 22B V 2
For V2+ =0:
 V 2
B  S 11B A V 2 S A
B
21 A B
S 21
Example 2: Solution
From [SA]:
A  S 21A V1  S 22A B
Substituting B will give:
A  S 21A V1  S 22A S 11B A
Substituting A
V 2  V 

 S A
21V1

 S A
22 S B
11

 SB
2

S 21B  21 
Thus,
V 2 S 21A S 21B
S 21   
V1 1  S 22A S 11B
 Microwave Network Analysis

The ABCD Matrix –

Conversions Between Two-Port Network Parameters