TUNNEL DIODE

AND
GUNN DIODE
 TUNNEL DIODE
It was invented in August 1957 by Leo Esaki when
he was with Tokyo Tsushin Kogyo.
A tunnel diode or Esaki diode is a type
of semiconductor that is capable of very fast
operation, well into the microwave frequency
region, made possible by the use of the quantum
mechanical effect called tunneling thus this device
is named as tunnel diode.
TUNNEL DIODE SYMBOL
THESE DIODES HAVE A
HEAVILY DOPED P–N JUNCTION THAT IS
ABOUT 10 NM WIDE. THE HEAVY
DOPING RESULTS IN A BROKEN BAND
GAP, WHERE CONDUCTION
BAND ELECTRON STATES ON THE N-
SIDE ARE MORE OR LESS ALIGNED
WITH VALENCE BAND HOLE STATES ON
THE P-SIDE.
OPERATION
The operation depends upon quantum mechanics principle known
as “tunneling”. The movement of valence electrons from valence
energy band to conduction band with no applied forward voltage
is called “tunneling”. Intrinsic voltage barrier (0.3V for Ge) is
reduced which enhanced tunneling. Enhanced tunneling causes
effective conductivity. When the tunnel diode is slightly forward
biased, many carriers are able to tunnel through narrow depletion
region without acquiring that energy. The carriers are able to
tunnel or easily pass because the voltage barrier is reduced due to
high doping.
 FORWARD BIAS OPERATION
Under normal forward bias operation, as voltage begins to increase, electrons
at first tunnel through the very narrow p–n junction barrier and fill electron
states in the conduction band on the n-side which become aligned with empty
valence band hole states on the p-side of the p-n junction. As voltage
increases further, these states become increasingly misaligned and the current
drops. This is called negative resistance because current decreases with
increasing voltage. As voltage increases yet further, the diode begins to
operate as a normal diode, where electrons travel by conduction across the p–
n junction, and no longer by tunneling through the p–n junction barrier. The
most important operating region for a tunnel diode is the negative resistance
region. Its graph is different from normal p-n junction diode.
 REVERSE BIAS OPERATION
When used in the reverse direction, tunnel diodes are
called back diodes (or backward diodes) and can act as
fast rectifiers with zero offset voltage and extreme linearity
for power signals (they have an accurate square law
characteristic in the reverse direction). Under reverse bias,
filled states on the p-side become increasingly aligned with
empty states on the n-side and electrons now tunnel
through the p-n junction barrier in reverse direction.
As forward bias is applied, After continuous increase of V, the
significant I is produced. current achieves its minimum value
called as Valley Current. After
further increase in V, current start
increasing as ordinary diode.
APPLICATIONS
Oscillator circuits: Tunnel diodes can be used
as high frequency oscillators as the transition
between the high electrical conductivity is very
rapid. They can be used to create oscillation as
high as 5GHz. Even they are capable of
creativity oscillation up to 100 GHz in a
appropriate digital circuits.
USED IN MICROWAVE CIRCUITS: NORMAL DIODE
TRANSISTORS DO NOT PERFORM WELL IN MICROWAVE
OPERATION. SO, FOR MICROWAVE GENERATORS AND
AMPLIFIERS TUNNEL DIODE ARE. IN MICROWAVE
WAVES AND SATELLITE COMMUNICATION EQUIPMENT
THEY WERE USED WIDELY.
RESISTANT TO NUCLEAR RADIATION: TUNNEL DIODES
ARE RESISTANT TO THE EFFECTS OF MAGNETIC FIELDS,
HIGH TEMPERATURE AND RADIOACTIVITY. THAT’S
WHY THESE CAN BE USED IN MODERN MILITARY
EQUIPMENT. THESE ARE USED IN NUCLEAR MAGNETIC
RESOURCE MACHINE ALSO.
 GUNN DIODE
A Gunn diode, also known as a transferred
electron device (TED), is a form of diode, two-
terminal passive semiconductor electronic
component, with negative resistance, used in
high-frequency electronics. It is based on the
"Gunn effect" discovered in 1962 by physicist
J.B. Gunn.
ITS INTERNAL CONSTRUCTION IS UNLIKE
OTHER DIODES IN THAT IT CONSISTS ONLY OF N-
DOPED SEMICONDUCTOR MATERIAL, WHEREAS
MOST DIODES CONSIST OF BOTH P AND N-
DOPED REGIONS. IT THEREFORE DOES NOT
CONDUCT IN ONLY ONE DIRECTION AND
CANNOT RECTIFY ALTERNATING CURRENT LIKE
OTHER DIODES, WHICH IS WHY SOME SOURCES
DO NOT USE THE TERM DIODE BUT PREFER TED.
THE GUNN DIODE SYMBOL USED IN CIRCUIT DIAGRAMS
VARIES. OFTEN A STANDARD DIODE IS SEEN IN THE DIAGRAM,
HOWEVER THIS FORM OF GUNN DIODE SYMBOL DOES NOT
INDICATE THE FACT THAT THE GUNN DIODE IS NOT A PN
JUNCTION. INSTEAD ANOTHER SYMBOL SHOWING TWO
FILLED IN TRIANGLES WITH POINTS TOUCHING IS USED AS
SHOWN BELOW.
 OPERATION
The operation of the Gunn diode can be
explained in basic terms. When a voltage is
placed across the device, most of the voltage
appears across the inner active region. As this is
particularly thin this means that the voltage
gradient that exists in this region is exceedingly
high.
THE DEVICE EXHIBITS A NEGATIVE RESISTANCE REGION ON
ITS V/I CURVE AS SEEN BELOW. THIS NEGATIVE RESISTANCE
AREA ENABLES THE GUNN DIODE TO AMPLIFY SIGNALS. THIS
CAN BE USED BOTH IN AMPLIFIERS AND OSCILLATORS.
HOWEVER GUNN DIODE OSCILLATORS ARE THE MOST
COMMONLY FOUND.
THIS NEGATIVE RESISTANCE REGION MEANS
THAT THE CURRENT FLOW IN DIODE INCREASES
IN THE NEGATIVE RESISTANCE REGION WHEN
THE VOLTAGE FALLS - THE INVERSE OF THE
NORMAL EFFECT IN ANY OTHER POSITIVE
RESISTANCE ELEMENT. THIS PHASE REVERSAL
ENABLES THE GUNN DIODE TO ACT AS AN
AMPLIFIER AND OSCILLATOR.
GUNN DIODE OPERATION AT MICROWAVE
FREQUENCIES
At microwave frequencies, it is found that the dynamic action of
the diode incorporates elements resulting from the thickness of
the active region. When the voltage across the active region
reaches a certain point a current is initiated and travels across the
active region. During the time when the current pulse is moving
across the active region the potential gradient falls preventing
any further pulses from forming. Only when the pulse has
reached the far side of the active region will the potential
gradient rise, allowing the next pulse to be created.
IT CAN BE SEEN THAT THE TIME TAKEN FOR
THE CURRENT PULSE TO TRAVERSE THE
ACTIVE REGION LARGELY DETERMINES THE
RATE AT WHICH CURRENT PULSES ARE
GENERATED, AND HENCE IT DETERMINES
THE FREQUENCY OF OPERATION.
TO SEE HOW THIS OCCURS, IT IS NECESSARY TO LOOK
AT THE ELECTRON CONCENTRATION ACROSS THE
ACTIVE REGION. UNDER NORMAL CONDITIONS THE
CONCENTRATION OF FREE ELECTRONS WOULD BE THE
SAME REGARDLESS OF THE DISTANCE ACROSS THE
ACTIVE DIODE REGION. HOWEVER A SMALL
PERTURBATION MAY OCCUR RESULTING FROM NOISE
FROM THE CURRENT FLOW, OR EVEN EXTERNAL NOISE
- THIS FORM OF NOISE WILL ALWAYS BE PRESENT AND
ACTS AS THE SEED FOR THE OSCILLATION. THIS GROWS
AS IT PASSES ACROSS THE ACTIVE REGION OF THE
GUNN DIODE.
THE INCREASE IN FREE ELECTRONS IN ONE AREA CAUSE THE FREE ELECTRONS
IN ANOTHER AREA TO DECREASE FORMING A FORM OF WAVE. IT ALSO RESULTS
IN A HIGHER FIELD FOR THE ELECTRONS IN THIS REGION. THIS HIGHER FIELD
SLOWS DOWN THESE ELECTRONS RELATIVE TO THE REMAINDER. AS A RESULT
THE REGION OF EXCESS ELECTRONS WILL GROW BECAUSE THE ELECTRONS IN
THE TRAILING PATH ARRIVE WITH A HIGHER VELOCITY. SIMILARLY THE AREA
DEPLETED OF ELECTRONS WILL ALSO GROW BECAUSE THE ELECTRONS
SLIGHTLY AHEAD OF THE AREA WITH EXCESS ELECTRONS CAN MOVE FASTER. IN
THIS WAY, MORE ELECTRONS ENTER THE REGION OF EXCESS MAKING IT
LARGER, AND MORE ELECTRONS LEAVE THE DEPLETED REGION BECAUSE THEY
TOO CAN MOVE FASTER. IN THIS WAY THE PERTURBATION INCREASES.
THE PEAK WILL TRAVERSE ACROSS THE DIODE UNDER THE ACTION OF THE
POTENTIAL ACROSS THE DIODE, AND GROWING AS IT TRAVERSES THE
DIODE AS A RESULT OF THE NEGATIVE RESISTANCE. THE REASON FOR THIS
UNUSUAL ACTION CAN BE SEEN IF THE VOLTAGE AND CURRENT CURVES
ARE PLOTTED FOR A NORMAL DIODE AND A GUNN DIODE. FOR A NORMAL
DIODE THE CURRENT INCREASES WITH VOLTAGE, ALTHOUGH THE
RELATIONSHIP IS NOT LINEAR. ON THE OTHER HAND THE CURRENT FOR A
GUNN DIODE STARTS TO INCREASE, AND ONCE A CERTAIN VOLTAGE HAS
BEEN REACHED, IT STARTS TO FALL BEFORE RISING AGAIN. THE REGION
WHERE IT FALLS IS KNOWN AS A NEGATIVE RESISTANCE REGION, AND
THIS IS THE REASON WHY IT OSCILLATES.
 APPLICATION
Because of their high frequency capability, Gunn diodes are mainly
used at microwave frequencies and above. They can produce some of
the highest output power of any semiconductor devices at these
frequencies. Their most common use is in oscillators, but they are also
used in microwave amplifiers to amplify signals. Because the diode is
a one-port (two terminal) device, an amplifier circuit must separate the
outgoing amplified signal from the incoming input signal to prevent
coupling. One common circuit is are flection amplifier which uses
a circulator to separate the signals. A bias tee is needed to isolate the
bias current from the high frequency oscillations.
DISASSEMBLED RADAR SPEED GUN. THE GREY ASSEMBLY
ATTACHED TO THE END OF THE COPPER-COLORED HORN
ANTENNA IS THE GUNN DIODE OSCILLATOR WHICH GENERATES
THE MICROWAVES.
SENSORS AND MEASURING INSTRUMENTS

Gunn diode oscillators are used to generate microwave power

for: airborne collision avoidance radar, anti-lock brakes, sensors
for monitoring the flow of traffic, car radar detectors, pedestrian
safety systems, "distance traveled" recorders, motion detectors,
"slow-speed" sensors (to detect pedestrian and traffic movement
up to 50 mph), traffic signal controllers, automatic door openers,
automatic traffic gates, process control equipment to monitor
throughput, burglar alarms and equipment to detect trespassers,
sensors to avoid derailment of trains, remote vibration detectors,
rotational speed tachometers, moisture content monitors.
 RADIO AMATEUR
By virtue of their low voltage operation, Gunn diodes can serve as microwave
frequency generators for very low powered (few-milliwatt)
microwave transceivers called Gunnplexers. They were first used by British
radio amateurs in the late 1970s, and many Gunnplexer designs have been
published in journals. They typically consist of an approximately 3 inch
waveguide into which the diode is mounted. A low voltage (less than 12 volt)
direct current power supply, that can be modulated appropriately, is used to
drive the diode. The waveguide is blocked at one end to form a resonant
cavity and the other end usually feeds a horn antenna. An additional
"mixer diode" is inserted into the waveguide, and it is often connected to a
modified FM broadcast receiver to enable listening of other amateur stations.
Gunn plexers are most commonly used in the 10 GHz and 24 GHz ham
bands.
RADIO ASTRONOMY
Gunn oscillators are used as local oscillators for
millimeter-wave and submillimeter-wave radio
astronomy receivers. The Gunn diode is mounted in a
cavity tuned to resonate at twice the fundamental
frequency of the diode. The cavity length is changed by a
micrometer adjustment. Gunn oscillators capable of
generating over 50 mW over a 50% tuning range (one
waveguide band) are available.
THE GUNN OSCILLATOR FREQUENCY IS MULTIPLIED BY A DIODE
FREQUENCY MULTIPLIER FOR SUBMILLIMETER-WAVE
APPLICATIONS.
GUNN DIODES ARE ALSO KNOWN AS TRANSFERRED ELECTRON
DEVICES, TED, ARE WIDELY USED IN MICROWAVE RF
APPLICATIONS FOR FREQUENCIES BETWEEN 1 AND 100 GHZ.
THE GUNN DIODE IS MOST COMMONLY USED FOR GENERATING
MICROWAVE RF SIGNALS - THESE CIRCUITS MAY ALSO BE
CALLED A TRANSFERRED ELECTRON OSCILLATOR OR TEO. THE
GUNN DIODE MAY ALSO BE USED FOR AN AMPLIFIER IN WHAT
MAY BE KNOWN AS A TRANSFERRED ELECTRON AMPLIFIER OR
TEA.
AS GUNN DIODES ARE EASY TO USE, THEY FORM A RELATIVELY
LOW COST METHOD FOR GENERATING MICROWAVE RF SIGNALS.