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M-Ram: (Magnetoresistive - Random Access Memory)

M-RAM is a type of non-volatile memory that uses magnetoresistance to store data. It has advantages over other memory types like DRAM and flash, including non-volatility, high speed, low power consumption, and scalability. M-RAM uses magnetic tunnel junctions consisting of ferromagnetic layers separated by a thin insulating barrier to represent binary data states. A single M-RAM cell uses one magnetic tunnel junction and one transistor. M-RAM shows promise for future memory applications and could be used in areas like biosensors that integrate magnetic markers with memory arrays.

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Lakshmi Kanth
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81 views21 pages

M-Ram: (Magnetoresistive - Random Access Memory)

M-RAM is a type of non-volatile memory that uses magnetoresistance to store data. It has advantages over other memory types like DRAM and flash, including non-volatility, high speed, low power consumption, and scalability. M-RAM uses magnetic tunnel junctions consisting of ferromagnetic layers separated by a thin insulating barrier to represent binary data states. A single M-RAM cell uses one magnetic tunnel junction and one transistor. M-RAM shows promise for future memory applications and could be used in areas like biosensors that integrate magnetic markers with memory arrays.

Uploaded by

Lakshmi Kanth
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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

M-RAM (Magnetoresistive – Random


Access Memory)
Information flux.
Information Information Information
Information
transmission Processing storage
Input
word
Outside

Output

Magnetic (HDD)
DRAM, MRAM
Optical (CD, DVD)

M-RAM M. Bernacki, S. Wąsek


Memory categories.

WHY DO WEE NEED


M-RAM MEMORY ????

M-RAM M. Bernacki, S. Wąsek


Basic attractions
of M-RAM.
 Nonvolatility;
 Speed;
 Low-power consumption;
 Scalability.

M-RAM M. Bernacki, S. Wąsek


Basic attractions
of M-RAM.

Transfer data to microprocessor


without
creating a bottleneck!

M-RAM M. Bernacki, S. Wąsek


History and development...

M-RAM based on:


 M-RAM – quick view.
 Magnetoresistivity.
 AMR effect - 80-th.
 GMR effect - 80-th.
 TMR effect – 1995 year.

M-RAM M. Bernacki, S. Wąsek


Storage and states of a bit.
MRAM: charge and spin.
Storage state:
Soft ferromagnet
 DRAM: charge of capacitor.
„1” Insulator
[%]

 Flash, EEPROM: charge on floating gate. Hard ferromagnet


 FeRAM: charge of a ferroelectric capacitor.
TMR

„0”
Field [Oe]
M-RAM M. Bernacki, S. Wąsek
Implementation
of 1-MTJ / 1-transistor cell.

NiFe (free layer)


Al2O3 (tunneling barrier)
CoFe (fixed layer)

SAF
Ru

CoFe (pinned layer)


Word
line

I I
unclad  2 H clad
HHclad
w2  w

M-RAM M. Bernacki, S. Wąsek


Write.

Word
line

Without digit line With digit line


current current

M-RAM M. Bernacki, S. Wąsek


Write.

RA [kOhm-um2]
Word
line

Easy axis field [Oe]

M-RAM M. Bernacki, S. Wąsek


Read.

Word line Word


line

M-RAM M. Bernacki, S. Wąsek


Sizes of MTJ.

4nm NiFe (free layer) Ferromagnet I


1..2nm Al2O3 (tunneling barrier)
3nm CoFe (fixed layer) Tunnel barrier

Ru

3nm CoFe (pinned layer) Ferromagnet II

M-RAM M. Bernacki, S. Wąsek


Other MRAM cell
architectures.
Twin cell arrays:
 Circuit is faster than the 1T1TMR implementation.

 Less atractive on a cell density and cost basis.

Diode cell:
 SOI diodes allow the integration of a memory with most circuits
without sacrificing silicon wafer surface area.

 SOI diodes suitable for this aplication haven’t been developed yet.

Transistorless array:
 Large reduce in cell area.

 Complex circuity required to read bit state, slow read.

M-RAM M. Bernacki, S. Wąsek


MRAM 32Kb
memory segment.

Bit Bit line


line 0 31
Digit
line
Word line

Word line
Digit
line

M-RAM M. Bernacki, S. Wąsek


Reference generator.
Bit RMAX RMIN
line
Digit
line

Word
line

Word
line

Digit
line
RMAX RMIN RREF = 1/2(RMAX + RMIN)

M-RAM M. Bernacki, S. Wąsek


1Mb MRAM architecture.

Available modes:
Active mode
Sleep mode
Standby mode

M-RAM M. Bernacki, S. Wąsek


Examples and performance
of M-RAM technology.
 Motorola semiconductors –2002.
Freescale
Technology: semiconductors –2003/2004.
0.6um, 5-level metal CMOS, copper interconnects;
Technology:
Capacity: 1MB0.18mikrons, 5-level metal CMOS, copper interconnects;
Capacity:
Access 4MB;
time: 35ns
 Access time: 15-20ns

M-RAM M. Bernacki, S. Wąsek


Roadmap to future
storage technologies.

RRAM
with
CMR
M-RAM M. Bernacki, S. Wąsek
Bio – MRAM,
vision for tomorrow?

MRAM array Biomolecule labeled by magnetic markers

M-RAM M. Bernacki, S. Wąsek


References.

 Wykład z przedmiotu „Magnetyczne nośniki pamięci”, AGH;


 Materiały z Uniwersytetu Bielefeld: wykład „Thin films and nanostructures”;
 Materiały seminaryjne z „Motorola Labs”;
 Materiały z sympozjum „VLSI symposium 2002”;
 www.freescale.com
 www.motorola.com

M-RAM M. Bernacki, S. Wąsek


Dziękujemy za uwagę 

M-RAM M. Bernacki, S. Wąsek

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