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    Presentation ON Tri Gate Transistor: Prepared By: Sandeep (1706435)

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    Heera Heerar
    The document discusses the tri-gate transistor, which employs a novel three-dimensional gate design that improves current drive over traditional planar transistors. Tri-gate transistors incorporate a raised source and drain structure for lower resistance and are built on an ultra-thin layer of fully depleted silicon for reduced leakage. This allows tri-gate transistors to turn on and off faster while dramatically reducing power consumption compared to planar transistors. Tri-gate transistors are expected to replace nanometer transistors in Intel microprocessors by 2010 and help extend Moore's Law into the next decade.

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    Presentation ON Tri Gate Transistor: Prepared By: Sandeep (1706435)

    Uploaded by

    Heera Heerar
    487 views10 pages
    The document discusses the tri-gate transistor, which employs a novel three-dimensional gate design that improves current drive over traditional planar transistors. Tri-gate transistors incorporate a raised source and drain structure for lower resistance and are built on an ultra-thin layer of fully depleted silicon for reduced leakage. This allows tri-gate transistors to turn on and off faster while dramatically reducing power consumption compared to planar transistors. Tri-gate transistors are expected to replace nanometer transistors in Intel microprocessors by 2010 and help extend Moore's Law into the next decade.

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    TRI GATE TRANSISTOR

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    The document discusses the tri-gate transistor, which employs a novel three-dimensional gate design that improves current drive over traditional planar transistors. Tri-gate transistors incorporate a raised source and drain structure for lower resistance and are built on an ultra-thin layer of fully depleted silicon for reduced leakage. This allows tri-gate transistors to turn on and off faster while dramatically reducing power consumption compared to planar transistors. Tri-gate transistors are expected to replace nanometer transistors in Intel microprocessors by 2010 and help extend Moore's Law into the next decade.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    487 views10 pages

    Presentation ON Tri Gate Transistor: Prepared By: Sandeep (1706435)

    Uploaded by

    Heera Heerar
    The document discusses the tri-gate transistor, which employs a novel three-dimensional gate design that improves current drive over traditional planar transistors. Tri-gate transistors incorporate a raised source and drain structure for lower resistance and are built on an ultra-thin layer of fully depleted silicon for reduced leakage. This allows tri-gate transistors to turn on and off faster while dramatically reducing power consumption compared to planar transistors. Tri-gate transistors are expected to replace nanometer transistors in Intel microprocessors by 2010 and help extend Moore's Law into the next decade.

    Copyright:

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    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 10

    PRESENTATION

    ON
    TRI GATE TRANSISTOR

    PREPARED BY:
    SANDEEP
    (1706435)
    INTRODUCTION

    Transistors are the microscopic, silicon-based


    switches that process the ones and zeros of
    the digital worlds and are the fundamental
    building block of all semiconductor chips. With
    traditional planar transistors, electronic signals
    travel as if on a flat, one-way road.
    DEFINITION
    HISTORY
     Since their inception in the late 1950s,
    planar transistors have acted as the basic
    building block of microprocessors. The
    scaling of planar transistors requires the
    scaling of gate oxides and source/drain
    junctions. In 2002 Intel developed the
    world’s first CMOS tri-gate transistor,which
    employs a novel three-dimensional gate
    design that improves the drive current. Tri-
    gate transistors are expected to replace the
    nanometer transistors in the Intel
    microprocessors by 2010
    ARCH
     The tri-gate is built on an ultra-thin layer of
    fully depleted silicon for reduced current
    leakage. This allows the transistor to turn on
    and off faster, while dramatically reducing
    power consumption. It also incorporates a
    raised source and drain structure for low
    resistance, which allows the transistor to be
    driven with less power. The design is also
    compatible with the future introduction of a
    high K gate dielectric for even lower leakage.
     Moore's law describes a long-term trend in
    the history of computing hardware, in which
    the number of transistors that can be placed
    inexpensively on an integrated circuit has
    doubled approximately every two
    years.Moore's law 21st centuries precisely
    describes a driving force of technological
    and social change in the late 20th and early.
    ADVANTAGE
     Lower leakage and consume much less
    power.
     Faster & cooler operation.
     45% increase in speed or 50x reduction in
    off-current.
     The basic building blocks for future
    microprocessors.
     Moore's Law scaling can be taken well into
    the next decade .
    THANKS

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