Chapter 5:

BJT AC Analysis
BJT Transistor Modeling
• A model is an equivalent circuit that represents the AC
characteristics of the transistor.

• A model uses circuit elements that approximate the

behavior of the transistor.

• There are two models commonly used in small signal AC

analysis of a transistor:

– re model
– Hybrid equivalent model

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
The re Transistor Model

• BJTs are basically current-controlled devices; therefore the re model

uses a diode and a current source to duplicate the behavior of the
transistor.

• One disadvantage to this model is its sensitivity to the DC level. This

model is designed for specific circuit conditions.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Base Configuration
26 mV
I c  I e re 
Ie

Input impedance:
Z i  re

Output impedance:
Z o  

Voltage gain:
R L R L
AV  
re re

Current gain:
A i     1

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Configuration

The diode re model can be

replaced by the resistor re.

I e     1 I b   I b

26 mV
re 
Ie

more…
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Configuration

Input impedance:
Z i   re

Output impedance:
Z o  ro  

RL
AV  
Voltage gain: re

A i   ro  

Current gain:

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Collector Configuration

Input impedance:
Z i  (   1)re

Output impedance:
Z o  re || RE

RE
AV 
Voltage gain: R E  re

Ai    1

Current gain:

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
The Hybrid Equivalent Model
The following hybrid parameters are developed and used
for modeling the transistor. These parameters can be
found on the specification sheet for a transistor.

• hi = input resistance
• hr = reverse transfer voltage ratio (Vi/Vo)  0
• hf = forward transfer current ratio (Io/Ii)
• ho = output conductance

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Simplified General h-Parameter Model

• hi = input resistance
• hf = forward transfer current ratio (Io/Ii)

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
re vs. h-Parameter Model

Common-Emitter
h ie   re
h fe   ac

Common-Base

h ib  re
h fb     1

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
The Hybrid  Model
The hybrid  model is most useful for analysis of high-
frequency transistor applications.
At lower frequencies the hybrid  model closely
approximate the re parameters, and can be replaced by
them.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Fixed-Bias Configuration

• The input is applied to the base

• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and
output is 180

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Fixed-Bias Configuration

AC equivalent

re model

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Fixed-Bias Calculations
Input impedance:
Z i  R B ||  re
Z i   re R E  10 re

Output impedance:
Z o  R C || rO
Z o  R C ro  10R C

Voltage gain: Current gain:

Vo (R || r )
Av   C o I  R B ro
Vi re Ai  o 
I i (ro  R C )(R B   re )
RC
Av   ro  10R C
re A i   ro  10R C , R B  10 re

Current gain from voltage gain:

Zi
Ai  A v
RC

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Voltage-Divider Bias

re model requires you to determine , re, and ro.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Voltage-Divider Bias
Calculations
Input impedance:

R   R 1 || R 2
Z i  R  ||  re

Output impedance:
Z o  R C || ro Current gain:
I  R ro
Z o  R C ro  10R C Ai  o 
I i (ro  R C )(R    re )
I R 
Voltage gain: Ai  o  r  10R C
I i R    re o
Vo  R C || ro I
Av   A i  o   ro  10R C , R   10 re
Vi re Ii
Vo R
Av    C ro  10R C
Vi re Current gain from voltage gain:
Z
Ai  A v i
RC
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Emitter-Bias
Configuration

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations

Input impedance:
Z i  R B || Z b
Z b   re  (  1)R E
Z b  (re  R E )
Z b  R E

Output impedance:
Zo  R C

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Gain Calculations
Voltage gain:
Vo R C
Av  
Vi Zb
V RC
Av  o  
Vi re  R E Z b  (re  R E )
Vo R
Av    C Z b  R E
Vi RE

Current gain: Current gain from voltage gain:

I R B Zi
Ai  o  Ai  A v
Ii R B  Zb RC

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Emitter-Follower Configuration

• This is also known as the common-collector configuration.

• The input is applied to the base and the output is taken from the
emitter.
• There is no phase shift between input and output.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations
Input impedance:

Z i  R B || Z b
Z b   re  (  1)R E
Z b  (re  R E )
Z b  R E

Output impedance:

Z o  R E || re
Z o  re R E  re

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Gain Calculations
Voltage gain:

Vo RE
Av  
Vi R E  re
V
A v  o  1 R E  re , R E  re  R E
Vi

Current gain:
R B
Ai  
R B  Zb

Current gain from voltage gain:

Z
Ai  A v i
RE

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Base Configuration

• The input is applied to the

emitter.
• The output is taken from the
collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input
and output.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Calculations
Input impedance:
Z i  R E || re

Output impedance:
Zo  RC

Voltage gain:
Vo R C R C
Av   
Vi re re

Current gain:
I
A i  o     1
Ii

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Collector Feedback
Configuration

• This is a variation of the common-emitter fixed-bias configuration

• Input is applied to the base
• Output is taken from the collector
• There is a 180 phase shift between input and output

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Calculations
Input impedance:
re
Zi 
1 RC

 RF

Output impedance:
Z o  R C || R F

Voltage gain:
Vo R
Av   C
Vi re

Current gain:
I R F
Ai  o 
Ii R F  R C
I R
Ai  o  F
Ii RC

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Collector DC Feedback Configuration
• This is a variation of the
common-emitter, fixed-bias
configuration
• The input is applied to the base
• The output is taken from the
collector
• There is a 180 phase shift
between input and output

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Calculations

Input impedance:
re
Zi 
1 RC

 RF

Output impedance:
Z o  R C || R F

Voltage gain: Current gain:

Vo R I R F
Av   C Ai  o 
Vi re Ii R F  R C
I R
Ai  o  F
I RC
i

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Two-Port Systems Approach
This approach:
• Reduces a circuit to a two-port system
• Provides a “Thévenin look” at the output terminals
• Makes it easier to determine the effects of a changing load

With Vi set to 0 V:
Z Th  Z o  R o

The voltage across

the open terminals is:
E Th  A vNL Vi

where AvNL is the

no-load voltage
gain.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Effect of Load Impedance on Gain

This model can be applied to

any current- or voltage-
controlled amplifier.

Adding a load reduces the

gain of the amplifier:
Vo RL
Av   A vNL
Vi RL  Ro
Zi
Ai  A v
RL

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Effect of Source Impedance on Gain

The fraction of
applied signal that
reaches the input of
the amplifier is:
R i Vs
Vi 
Ri  Rs

The internal resistance of the signal source reduces the

overall gain:
Vo Ri
A vs   A vNL
Vs R i  R s

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Combined Effects of RS and RL on Voltage
Gain
Effects of RL:
Vo R L A vNL
Av  
Vi RL  Ro
R
Ai  A v i
RL

Effects of RL and RS:

Vo Ri RL
A vs   A vNL
Vs R i  R s R L  R o
R  Ri
A is   A vs s
RL

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Cascaded Systems

• The output of one amplifier is the input to the next amplifier

• The overall voltage gain is determined by the product of gains of the
individual stages
• The DC bias circuits are isolated from each other by the coupling
capacitors
• The DC calculations are independent of the cascading
• The AC calculations for gain and impedance are interdependent

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
R-C Coupled BJT Amplifiers

Input impedance, first stage:

Z i  R 1 || R 2 ||  re

Output impedance, second stage:

Zo  RC

Voltage gain:
R C || R 1 || R 2 ||  re
A v1 
re
RC
A V2 
re
A v  A v1 A v 2

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Cascode Connection

This example is a CE–CB

combination. This arrangement
provides high input impedance
but a low voltage gain.

The low voltage gain of the

input stage reduces the Miller
input capacitance, making this
combination suitable for high-
frequency applications.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Darlington Connection

The Darlington circuit provides a very high

current gain—the product of the individual
current gains:
D = 12
The practical significance is that the circuit
provides a very high input impedance.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
DC Bias of Darlington Circuits

Base current:
V  VBE
I B  CC
R B   DR E

Emitter current:
I E  ( D  1)I B   D I B

Emitter voltage:
VE  I E R E

Base voltage:
VB  VE  VBE

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Feedback Pair

This is a two-transistor circuit that operates like a

Darlington pair, but it is not a Darlington pair.

It has similar characteristics:

• High current gain
• Voltage gain near unity
• Low output impedance
• High input impedance

The difference is that a Darlington

uses a pair of like transistors,
whereas the feedback-pair
configuration uses complementary
transistors.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Current Mirror Circuits

Current mirror circuits

provide constant current
in integrated circuits.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Current Source Circuits
Constant-current sources can be built using FETs, BJTs, and
combinations of these devices.

IE  IC
VZ  VBE
I  IE 
RE

more…

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Current Source Circuits

VGS = 0V
ID = IDSS = 10 mA

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Fixed-Bias Configuration
Input impedance:
Z i  R B || h ie

Output impedance:
Z o  R C || 1 / h oe

Voltage gain:
Vo h  R || 1 / h o e 
Av    fe C
Vi h ie

Current gain:
I
A i  o  h fe Z i  R B || h ie
Ii

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Voltage-Divider Configuration
Input impedance:
Z i  R  || h ie

Output impedance:
Zo  RC

Voltage gain:
gain
h  R || 1/h oe 
A v   fe C
h ie

Current gain:
h fe R 
Ai  
R   h ie

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Emitter-Follower Configuration
Input impedance:
Z b  h fe R E
Z i  R o || Z b
Z b  h fe R E
Output impedance:
Z i  R o || Z b
h
Z o  R E || ie
h fe

Voltage gain:
Vo RE
Av  
Vi R E  h ie / h fe

Current gain:
h fe R B
Ai 
R B  Zb
Zi
Ai  A v
RE

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Base Configuration
Input impedance:
Z i  R E || h ib

Output impedance:
Zo  R C

Voltage gain:
Vo h R
Av    fb C
Vi h ib

Current gain:
I
A i  o  h fb  1
Ii

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Troubleshooting
Check the DC bias voltages

 If not correct, check power supply, resistors, transistor.

Also check the coupling capacitor between amplifier
stages.

Check the AC voltages

 If not correct check transistor, capacitors and the

loading effect of the next stage.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.