CMOS Inverter
CMOS Inverter
Circuits
A Design
Perspective
Dr. J. Raja Paul Perinbam
Dept. of ECE
Anna University
V in V out
CL
VDD PMOS 2λ
Contacts
PMOS
In Out
In Out
Metal 1
Polysilicon
NMOS
NMOS
GND
Abut cells
VDD
Connect in Metal
Rp
VOL = 0
VOH = VDD
V out VM = f(Rn, Rp)
V out
Rn
V in 5 V DD V in 5 0
Rp tpHL = f(Ron.CL)
= 0.69 RonCL
Vout
Vout
CL CL
Rn
Vin 5 0 Vin 5 V DD
(a) Low-to-high (b) High-to-low
IDn
V in = V DD +VGSp
IDn = - IDp
V out = VDD +VDSp
Vout
Vin=1.5 Vin=1.5
VGSp=-2.5
Vin = V DD+VGSp Vout = V DD+VDSp
IDn = - IDp
ID n
Vin = 0 Vin = 2.5
Vout
NMOS sat
1.5
PMOS sat
1
NMOS res
PMOS sat NMOS res
0.5
PMOS off
0 .5 1 1 .5 2 2 .5 Vin
Digital Integrated Circuits2nd Inverter
Determining VIH and VIL
Vout
V OH
VM
V in
V OL
V IL V IH
A simplified approach
2
4
6
8
g a in
1 0
1 2
1 4
1 6
1 8
0 0 .5 1 1 .5 2 2 .5
V (V )
in
2
0 .1 5
1 .5
(V )
(V )
0 .1
out
out
V
V
0 .0 5
0 .5
Gain=-1
0
0 0 0 .0 5 0 .1 0 .1 5 0 .2
0 0 .5 1 1 .5 2 2 .5
V (V )
V (V ) in
in
tpHL = CL Vswing/2
Iav
Vout CL
~
Iav CL kn VDD
Vin = V DD
tpHL = f(Ron.CL)
= 0.69 RonCL
Vout
Vout ln(0.5)
CL
Ron
1 VDD
0.5
0.36
Vin = V DD
t
RonCL
PMOS
1.2µm
=2λ
Out
In
Metal1
Polysilicon
NMOS
GND
2 .5
?
2
tp = 0.69 CL (Reqn+Reqp)/2
1 .5
(V )
out
1 tpLH tpHL
V
0 .5
0 . 5
0 0 .5 1 1 .5 2 2 .5
t (s e c ) 10
x 1 0
4 .5
4
t (n o rm a liz e d )
3 .5
3
p
2 .5
1 .5
1
0 .8 1 1 .2 1 .4 1 .6 1 .8 2 2 .2 2 .4
V (V )
D D
0.3
tpHL(nsec)
0.25
0.2
0.15
0 0.2 0.4 0.6 0.8 1
trise (nsec)
In Out
CL
If CL is given:
- How many stages are needed to minimize the delay?
- How to size the inverters?
RW
CL
RW Load (CL)
tp = k RWCL
2W
W
Cint CL
Load
CN = Cunit
Delay ~ RW ( Cint + C L )
In Out
1 2 N CL
f =NF
Minimum path delay
(
t p = Nt p 0 1 + N F / γ )
Digital Integrated Circuits2nd Inverter
Example
In Out
1 f f2 CL= 8 C1
C1
f =38 =2
ln f
t p 0 ln F f γ
( 1/ N
)
t p = Nt p 0 F / γ + 1 = +
γ ln f ln f
∂t p t p 0 ln F ln f − 1 − γ f
= ⋅ =0
∂f γ ln f 2
1 8 64 2 8 18
1 4 16 64 3 4 15
1 64 4 2.8 15.3
2.8 8 22.6
• Leakage
Leaking diodes and transistors
Vin Vout
CL
Energy/transition = CL * Vdd2
Vdd Vt
CL
E 0 → 1 = CL • Vdd • ( V dd – Vt )
Can exploit reduced swing to lower power
(e.g., reduced bitline swing in memory)
Istat
Vout
CL
Vin =5V
Pstat = P(In=1).Vdd . Istat
Wasted• Dominates over dynamic consumption
energy …
Should be avoided in almost all cases,
• Not a function of switching frequency
but could help reducing energy in others (e.g. sense amps)
• General Scaling
most realistic for todays situation —
voltages and dimensions scale with different factors
TiSi2 AlCu
SiO2
Tungsten
poly
p-well n-well SiO2
n+ p-epi p+
p+
M2
M4
M1 M3
Polysilicon Aluminum
9 2
0
Well or Polysilicon
6
10 2
3 3
Active Metal1
Contact
or Via 2
3 Hole 3
2 2 4
Metal2
Select
3 2
2
2
1
3 3
2 5
Well
Substrate
A A’
Out
(a) Layout
A A’
n
psubstrate Field
+ +
n p Oxide
(b) CrossSection along AA’
In Out
• Dimensionless layout entities
• Only topology is important
• Final layout generated by
1 “compaction” program
GND
Current State
Next state
Registers
Q D
CLK
2 storage mechanisms
• positive feedback
• charge-based
D Q D Q
Clk Clk
Clk Clk
D D
Q Q
In D Q Out In D Q Out
G G
CLK CLK
clk clk
In In
Out Out
N P
Logic
Latch Latch
Logic
CLK
t Register
tsu thold D Q
D DATA CLK
STABLE t
tc 2 q
Q DATA
STABLE t
Vo1 Vi2
V o2 =V i 1
Vi1 Vo2
A
Vi2 =Vo1
B
Vi1 =Vo2
V i2 5 V o1
C C
B B
V i1 5 V o2 V i1 5 V o2
d d
Gain should be larger than 1 in the transition region
Q D D
CLK
CLK
D
CLK
Forcing the state
Converting into a MUX (can implement as NMOS-only)
Q 0 Q
1
D 0 D 1
CLK CLK
CLK
CLK
CLK
QM
CLK
QM
CLK
CLK
0 Q D
1 QM
1
QM
D 0 Q
CLK
CLK
I2 T2 I3 I5 T4 I6 Q
QM
D I1 T1 I4 T3
CLK
2.5
CLK
1.5
Volts
D
tc 2 q(lh) tc 2 q(hl)
Q
0.5
2 0.5
0 0.5 1 1.5 2 2.5
time, nsec
VDD VDD
M2 M6
CLK M4 CLK M8
X
D Q
CL1 CL2
CLK M3 CLK M7
M1 M5
Master Stage
Fan-out
considerati
ons
D Q
Clk
T
Clk PWm
tsu
D
thold
tc-q td-q
Q
D Q
Clk
T
Clk
D thold
tsu
tc-q
Q
Clk tJS
delay delay
(a) Positive skew
R1 R2 R3
In Combinational Combinational
D Q D Q D Q •••
Logic Logic
delay
(b) Negative skew
TCLK
TCLK
1
CLK1
CLK2 2 4
th
TCLK +
TCLK
1 3
CLK1
CLK2 2 4
tc q tlogic
tc q, cd t
tsu, thold
tc q tlogic
tc q, cd t
tsu, thold
REGS Combinational
In Logic
CLK t log ic
tc-q , tc-q, cd t log ic, cd
ts u, thold
tjitter
TSU
Flip TClk-Q
-flop
φ=1
φ=0
Logic
Representation after
M. Horowitz, VLSI Circuits 1996.
TSU
TSU TClk-Q
TClk-Q
φ=1
φ=1 φ=0
φ=0
Logic delay
Precharge Evaluate Precharge
Evaluate
Clk
Latch
Logic
Clk
PW
P
L1 L2
Logic
Latch Latch
Logic
L2 latch
L1
Logic
L2 φ=1
Latch Latch
L1 latch
Logic
Long φ=0
path
M
N
Fan-out N Fan-in M
Ri = ∞
Ro = 0
Fanout = ∞
g=∞
NMH = NML = VDD/2
V in