Scribd
Upload
33 views16 pages

Diffusion: Dr. Rohan Gupta A.P, Ece

This document discusses diffusion in semiconductors. It describes how impurities are introduced into semiconductors through diffusion processes using different methods like from a chemical vapor source or ion implantation. The document explains that diffusion occurs more rapidly at high temperatures, around 900-1100 degrees Celsius, and very slowly at room temperature. It also discusses different mechanisms of diffusion, including substitutional, interstitial, interstitial-substitutional, kick out, interstitialcy, and combinational diffusion, and how crystal structure and temperature affect diffusion rates.

Uploaded by

Navdeep Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
33 views16 pages

Diffusion: Dr. Rohan Gupta A.P, Ece

This document discusses diffusion in semiconductors. It describes how impurities are introduced into semiconductors through diffusion processes using different methods like from a chemical vapor source or ion implantation. The document explains that diffusion occurs more rapidly at high temperatures, around 900-1100 degrees Celsius, and very slowly at room temperature. It also discusses different mechanisms of diffusion, including substitutional, interstitial, interstitial-substitutional, kick out, interstitialcy, and combinational diffusion, and how crystal structure and temperature affect diffusion rates.

Uploaded by

Navdeep Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 16

Diffusion

Dr. Rohan Gupta


A.P,ECE
Diffusion
• Impurities introduced in to selected region of
semiconductor
• Dopant atoms introduced in many ways
• Diffusion from chemical source in to vapor form at
high temperature
• Diffusion from doped oxide source
• Diffusion from ion implanted layer
• 900 to 1100 degree centigrade
• Melting point of silicon is 1420 degree centigrade
• Rate at which impurities diffuse is of order of
1 micrometer per hour
• Penetration depth of order of 0.3 to 30
micrometer
• Diffusion process slow at room temperature
• Use of selective masking makes possible wide
variety of devices available in form of ICs
Diffusion in solids
• Diffusion mechanisms
• Crystal structure plays important role
• Wandering of impurity takes place
Substitutional Diffusion
• At high temperature atoms move out of lattice
site
• Impurity occupies position in crystal after it is
cooled
• Replacing silicon atom by impurity atom
• Applicable to diffusants such as boron,
phosphorus and arsenic
Substitutional Diffusion
• Impurity atom has to overcome energy barrier
• Jump rate is very slow at ordinary
temperature
• Diffusion rate can be speeded up by increase
in temperature
• 1000 degree centigrade
Interstitial Diffusion
• Impurity atoms do not replace but moves
• Gold, copper and silver
• Gold is used to increase speed of digital ICs
• Void is big enough to contain impurity atom
• Impurity atom located in one void can move to
neighboring void
Interstitial Diffusion
• Diffusion rate slow at room temperature
• 1000 degree centigrade
• Diffusion rate greater than substitutional
diffusion
• Long term stability can not be achieved with
Lithium
Interstitial-substitutional Diffusion
• Impurity atoms occupy substitutional as well
as interstitial sites
• Move at significant rate
• Dissociative mechanism by which
substitutional impurity atom can become
interstitial leaving behind vacancy can be
controlling factor for this process
• Copper and Nickel
Interstitial-substitutional Diffusion
Kick out Mechanism
Interstitialcy Diffusion
• Modified version of substitutional diffusion
• Pushing substituionally located impurity atom
in to interstitial sites
• Diffuse to adjacent substitutional sites and
create new self interstitials
• Boron and phosphorous
Interstitialcy Diffusion
Combinational Diffusion
• Fraction diffuse substantially and rest
interstitially
• Movement of impurities and not ultimate
destination
• It is possible that some may end in
substitutional sites and others in interstitial
sites

You might also like