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Vinodkumar Jagdale: NESGI, E & TC Department, Naigaon, Pune

This document discusses semiconductor fundamentals and pn junctions. It describes the characteristics of forward- and reverse-biased pn junctions, including that a forward-biased junction acts like a closed switch with near-zero resistance and current flows easily, while a reverse-biased junction acts like an open switch with near-infinite resistance and no current flows. It also discusses rectification using diodes and different types of rectifiers.

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60 views62 pages

Vinodkumar Jagdale: NESGI, E & TC Department, Naigaon, Pune

This document discusses semiconductor fundamentals and pn junctions. It describes the characteristics of forward- and reverse-biased pn junctions, including that a forward-biased junction acts like a closed switch with near-zero resistance and current flows easily, while a reverse-biased junction acts like an open switch with near-infinite resistance and no current flows. It also discusses rectification using diodes and different types of rectifiers.

Uploaded by

vk2you009
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Chapter 01

Vinodkumar Jagdale
Important energy bands are,
•Valence Band
•Conduction Band
•Forbidden Band
 Semiconductor fundamentals
 What is a Semiconductor ?
A pn junction
Forward- and reverse-biased pn junctions
Semiconductor diode v-i characteristic
The v-i characteristic of the semiconductor diode
Forward bias Reverse Bias

Biasing polarities (+) (-) (-) (+)


IF
Equivalent switch ON OFF
state

Device resistance Zero Infinite

Device current A-to-K current Zero


determined by external
resistance and voltage
A-to-K voltage Zero Equal to the applied
voltage
What is rectification?
What is Rectifier?
Types of Rectifier.
Half Wave Rectifier
Dual Polarity Half Wave rectifier
Full Wave rectifier(Center Tap)
Dual polarity Full Wave Rectifier(Center Tap)
Full Wave Bridge Rectifier
VP VS RL VL

VP VS RL VL
VP VS RL VL

VL ( pk )  VS ( pk )  VF
NS
VS ( pk )  VP ( pk )
NP
Vrms
Vpk   2 Vrms
0.707
 D. C. or Average Load Current (Idc)
 D. C. or Average Load Voltage (Vdc)

 A. C. or RMS Load Current (Irms)

 A. C. or RMS Load Voltage (Vrms)


 Ripple Factor(r)

 Voltage Regulation
 D.C. Output Power Pdc

Pdc = I2dc * RL

 A.C. Input Power Pac

Pac = Is2rms * (RS+RF+RL)

 Rectification Efficiency
 Transformer Utilization Factor (TUF)

 Peak Inverse Voltage (PIV)

PIV = Vm Volts
 D. C. or Average Load Current (Idc)
 D. C. or Average Load Voltage (Vdc)

 A. C. or RMS Load Current (Irms)

 A. C. or RMS Load Voltage (Vrms)


 Ripple Factor(r)

 Voltage Regulation
 D.C. Output Power Pdc

Pdc = I2dc * RL

 A.C. Input Power Pac

Pac = Is2rms * (RS+RF+RL)

 Rectification Efficiency
 Transformer Utilization Factor (TUF)

 Peak Inverse Voltage (PIV)

PIV = 2 Vm Volts
 D. C. or Average Load Current (Idc)
 D. C. or Average Load Voltage (Vdc)

 A. C. or RMS Load Current (Irms)

 A. C. or RMS Load Voltage (Vrms)


 Ripple Factor(r)

 Voltage Regulation
 D.C. Output Power Pdc

Pdc = I2dc * RL

 A.C. Input Power Pac

Pac = Is2rms * (RS+2RF+RL)

 Rectification Efficiency
 Transformer Utilization Factor (TUF)

 Peak Inverse Voltage (PIV)

PIV = Vm Volts
 Peak Diode Current (Ip)

Where T1 is charging time & T2 is Discharging time


 Ripple Factor (r)

 RMS Ripple Voltage (Vr(rms))


 Peak Diode Current (Ip)

Where T1 is charging time & T2 is Discharging time

 Ripple Factor (r)


 RMS Ripple Voltage (Vr(rms))

 Average Load Voltage


(Vdc)
Simple capacitor filtering is adequate for many
electronic applications.
In more critical applications, more complex filter
networks are required to reduce or eliminate ripple
voltage
Examples of more complex filters are:
 LC filters.
 Pi(CLC) filters.
For a large change of current, voltage remains at VZ
Zener acts like an automatically varying resistor.
Can be obtained with VZ from 2.4 – 200 V.
Typical LED Characteristics

Semiconductor
Wavelength Colour VF @ 20mA
Material

GaAs 850-940nm Infra-Red 1.2v


GaAsP 630-660nm Red 1.8v
GaAsP 605-620nm Amber 2.0v
GaAsP:N 585-595nm Yellow 2.2v
AlGaP 550-570nm Green 3.5v
SiC 430-505nm Blue 3.6v
GaInN 450nm White 4.0v
 When forward biased, electrons from the N-type
material may recombine with holes in the P-type
material.
 System energy is decreased
 Excess energy emitted as light
 Indium gallium nitride (InGaN) semiconductors
have been used to make colored LEDs
 Stop lights
 Progress toward white LEDs is promising
Other Types of LED
Advantages OF Using LEDs
Disadvantages OF Using LEDs
LED Applications
Dot Matrix Display
• Introduction
• Features
• How to drive Dot Matrix Display
Structure of Dot Matrix Display

pin 13 3 4 10 6 pin 13 3 4 10 6

1 2 3 4 5 1 2 3 4 5
column column

row row

9 1 9 1

14 2 14 2

8 3 8 3

12 4 12 4

1 5 1 5

7 6 7 6

2 7 2 7

Figure 10.23. Anode row matrix LEDs (Fairchild GMA8X75C) Figure 10.22. Cathode row matrix LEDs (Fairchild GMC8X75C)
 Two parallel ports are needed to drive the matrix display.
 One port drives the column whereas the other port drives
the rows.
 One needs to scan the matrix LED displays one row at a
time, from top to bottom.
 For multiple matrix LED displays in the application, time-
multiplexing technique needs to be used.
 Dedicated driver chips such as MAX6952 (SPI interface)
and MAX6953 (I2C interface) are available for cathode-
row matrix LED displays to simplify the interfacing.
Concept of Multiplexing
Types of multiplexed Display
 Character-Oriented Displays
 Pixel-Oriented Displays

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