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    Basic Electronics Chap # 2 Diode: Engr. Farwa Batool

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    Farwa Jaffri
    The document discusses the voltage-current (V-I) characteristics of diodes in forward and reverse bias. In forward bias: - Current increases gradually as voltage increases until it reaches the 0.7V knee voltage, after which current increases rapidly. - The Shockley diode equation models this relationship between current and voltage. In reverse bias: - A very small saturation current flows even as the reverse voltage increases gradually. - At the breakdown voltage, the reverse current increases rapidly. The full V-I curve shows the distinct forward and reverse bias regions.

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    Download as PPTX, PDF, TXT or read online from Scribd

    Basic Electronics Chap # 2 Diode: Engr. Farwa Batool

    Uploaded by

    Farwa Jaffri
    56 views8 pages
    The document discusses the voltage-current (V-I) characteristics of diodes in forward and reverse bias. In forward bias: - Current increases gradually as voltage increases until it reaches the 0.7V knee voltage, after which current increases rapidly. - The Shockley diode equation models this relationship between current and voltage. In reverse bias: - A very small saturation current flows even as the reverse voltage increases gradually. - At the breakdown voltage, the reverse current increases rapidly. The full V-I curve shows the distinct forward and reverse bias regions.

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    lec 8 (basic electronics)

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    The document discusses the voltage-current (V-I) characteristics of diodes in forward and reverse bias. In forward bias: - Current increases gradually as voltage increases until it reaches the 0.7V knee voltage, after which current increases rapidly. - The Shockley diode equation models this relationship between current and voltage. In reverse bias: - A very small saturation current flows even as the reverse voltage increases gradually. - At the breakdown voltage, the reverse current increases rapidly. The full V-I curve shows the distinct forward and reverse bias regions.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    56 views8 pages

    Basic Electronics Chap # 2 Diode: Engr. Farwa Batool

    Uploaded by

    Farwa Jaffri
    The document discusses the voltage-current (V-I) characteristics of diodes in forward and reverse bias. In forward bias: - Current increases gradually as voltage increases until it reaches the 0.7V knee voltage, after which current increases rapidly. - The Shockley diode equation models this relationship between current and voltage. In reverse bias: - A very small saturation current flows even as the reverse voltage increases gradually. - At the breakdown voltage, the reverse current increases rapidly. The full V-I curve shows the distinct forward and reverse bias regions.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 8

    BASIC ELECTRONICS

    Chap # 2
    Diode

    Engr. Farwa Batool


    V-I Characteristic for Forward Bias
    • When a forward-bias voltage is applied across a diode, there is
    current. This current is called the forward current and is
    designated IF or diode current ID.
    • With 0 V across the diode, there is no forward current. As you
    gradually increase the forward-bias voltage, the forward current
    and the voltage across the diode gradually increase.
    • When the forward-bias voltage is increased to a value where
    the voltage across the diode reaches approximately 0.7 V
    (barrier potential), the forward current begins to increase
    rapidly.
    • 0.7V is the knee voltage for silicon.
    V-I Characteristic for Forward Bias
    • Shockley diode equation:

    • Where,
     I is the diode current,
     IS is the reverse bias Saturation current
     VD is the voltage across the diode
     VT is the thermal voltage
     n is the ideality factor, also known as the quality factor.
     VT = kT/q 
      k is the Boltzmann constant.
     T is the absolute temperature of the p–n junction
     q is the magnitude of charge of an electron.
    V-I Characteristic for Forward Bias
    • By using Shockley diode equation we can see that when VD=0V, the
    current through diode is also 0.
    • By increasing the voltage across diode, voltage across diode
    becomes equal to barrier potential thus at that time there is flood of
    electrons crossing the junction therefore current through the diode
    increases.
    V-I Characteristic for Forward Bias
    • Three points A, B, and C are shown in Figure.
    • Point A corresponds to a zero-bias condition.
    • Point B corresponds to point where the forward voltage is less than
    the barrier potential of 0.7 V.
    • Point C corresponds to point where
    the forward voltage approximately
    equals the barrier potential.
    V-I Characteristic for Reverse Bias
    • When a reverse-bias voltage is applied across a diode, there is only
    an extremely small reverse current IR or saturation current IS through
    the pn junction.
    • With 0 V across the diode, there is no reverse current.
    • As you gradually increase the reverse-bias voltage, there is a very
    small reverse current and the voltage across the diode increases.
    • When the applied bias voltage is increased to a value where the
    reverse voltage across the diode (VR) reaches the breakdown
    value (VBR), the reverse current begins to increase rapidly.
    • VBR is known as knee voltage in case of reverse bias condition of
    diode.
    • By using Shockley equation we can see that current through diode
    is equal to – IR.
    V-I curve for Reverse Bias
    The Complete V-I Characteristic Curve

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