Scribd Logo
Upload

Welcome to Scribd!

  • 673 views

    RRAM: Resistive Random Access Memory (Memristor)

    Uploaded by

    Shafkat Sakeebur Rahman
    RRAM (Resistive Random Access Memory), also known as memristor, is a type of non-volatile memory that could replace DRAM and flash memory. The document discusses the history of memristor theory and HP's working prototype in 2008. It also summarizes potential applications in mass storage devices and as a successor to DRAM. While the physics of resistance switching in RRAM is still unclear, it involves perovskite oxides, transition metal oxides or molecular materials. The document concludes that the reason for resistance switching is unknown but that RRAM can be built from different materials and has advantages over today's memory technologies.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd

    RRAM: Resistive Random Access Memory (Memristor)

    Uploaded by

    Shafkat Sakeebur Rahman
    673 views14 pages
    RRAM (Resistive Random Access Memory), also known as memristor, is a type of non-volatile memory that could replace DRAM and flash memory. The document discusses the history of memristor theory and HP's working prototype in 2008. It also summarizes potential applications in mass storage devices and as a successor to DRAM. While the physics of resistance switching in RRAM is still unclear, it involves perovskite oxides, transition metal oxides or molecular materials. The document concludes that the reason for resistance switching is unknown but that RRAM can be built from different materials and has advantages over today's memory technologies.

    Original Description:

    Basics of a Memristor

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PPT, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    RRAM (Resistive Random Access Memory), also known as memristor, is a type of non-volatile memory that could replace DRAM and flash memory. The document discusses the history of memristor theory and HP's working prototype in 2008. It also summarizes potential applications in mass storage devices and as a successor to DRAM. While the physics of resistance switching in RRAM is still unclear, it involves perovskite oxides, transition metal oxides or molecular materials. The document concludes that the reason for resistance switching is unknown but that RRAM can be built from different materials and has advantages over today's memory technologies.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    673 views14 pages

    RRAM: Resistive Random Access Memory (Memristor)

    Uploaded by

    Shafkat Sakeebur Rahman
    RRAM (Resistive Random Access Memory), also known as memristor, is a type of non-volatile memory that could replace DRAM and flash memory. The document discusses the history of memristor theory and HP's working prototype in 2008. It also summarizes potential applications in mass storage devices and as a successor to DRAM. While the physics of resistance switching in RRAM is still unclear, it involves perovskite oxides, transition metal oxides or molecular materials. The document concludes that the reason for resistance switching is unknown but that RRAM can be built from different materials and has advantages over today's memory technologies.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 14

    RRAM: Resistive Random Access

    Memory (Memristor)

    Md. Rezaul Kabir


    [email protected]

    Markus Soldemo
    [email protected]

    IM2654 Smart Electronic Materials


    2008 – 11 – 07
    Agenda
    Memristor / RRAM

    History

    Applications

    Physics

    Conclusions
    Memristor, HP labs
    Memristor / RRAM

    Memristor symbol Memristor, HP labs


    History

    1971: The theory of the Memristor 2008: HP has a working memristor prototype

    1960s: Resistance switching End of 1990s: Research on resistance switching


    Applications
    RRAM, successor to:
    Memristor

    DRAM

    Mass storage devices


    Memristor, HP labs
    Physics
    Schematic view of RRAM cell

    Materials/structures used
     Perovskite oxides
     Transition metal oxides

     Molecular materials

    Reasons for resistance switching


    Schematic view of RRAM cell

    Al / TiOx / Al ”Sandwich”
    Materials/structures used
    Perovskite oxides
    SrTiO3 (STO), SrZrO3 (SZO)

    SZO

    Perovskite oxide structure


    SrZrO3 (SZO) – Voltage – Current diagram
    Materials/structures used
    Transition metal oxides
    TiO2, Co-O

    Al / TiOx / Al ”Sandwich”

    TMO – Voltage – Current diagram

    Memristor, HP labs
    Materials/structures used
    Molecular materials
     Conductive filaments Conductive filaments

     Interfacial effects

     Trapped charges
    Interfacial effects

    Trapped charges
    Reasons for resistance switching
    ”...so far the reasons for the ”The microscopic nature of
    resistive switching induced by resistance switching and charge
    voltage pulse or bias voltage are transport in such devices is till
    not clear.” under debate, but one proposal
    is that the hysteresis requires
    - Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, Wen-Yueh Jang,
    Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng, some sort of atomic
    ”Bistable Resistive Switching of a Sputter-Deposited Cr-
    doped SrZrO3 Memory Film”, IEEE ELECTRON DEVICE rearrangement that modulates
    LETTERS, VOL. 26, NO. 6, JUNE 2005
    the electronic current.”
    - Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart &
    R. Stanley Williams, ”The missing memristor found”, Nature,
    Vol 453, 1 May 2008, doi:10.1038/nature06932
    Conclusions
     The reason for resistance switching is unknown

     RRAMs can be build by different kinds of materials

     The RRAM has advantages on today's memories

     The memristor is found and may have other applications


    than RRAM
    Sources

    H. Shima, Y. Tamai, Oxide nanolayer improving RRAM operational performance, Microelectron. J (2008),
    doi:10.1016/j.mejo.2008.06.096

    Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive nonvolatile memories”, J Electroceram, DOI
    10.1007/s10832-007-9081-y, 2007

    Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R. Stanley Williams, ”The missing memristor found”, Nature, Vol 453, 1
    May 2008, doi:10.1038/nature06932

    Chih-Yang Lin, Meng-Han Lin, Ming-Chi Wu, Chen-Hsi Lin, Tseung.Yuen Tseng, ”Improvement of Resistive Switching
    Characteristics in SrZrO3 Thin Films With Embedded Cr Layer”, IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 10, OCTOBER
    2008

    Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, Wen-Yueh Jang, Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng, ”Bistable
    Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film”, IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 6,
    JUNE 2005

    Picture references
    Slide 2, 3, 5, 9 http://upload.wikimedia.org/wikipedia/en/9/9f/Memristor.jpg (accessed: 2008-11-04)
    Slide 3 http://upload.wikimedia.org/wikipedia/commons/b/ba/Memristor-Symbol.svg (accessed 2008-11-04)
    Slide 5 http://upload.wikimedia.org/wikipedia/en/d/df/Open_HDD_and_SSD.JPG (accessed 2008-11-05)
    Slide 5 http://upload.wikimedia.org/wikipedia/en/5/5f/Edoram.jpg (accessed 2008-11-05)
    Slide 7, 9 Lee-Eun Yu, Sungho Kim, Min-Ki Ryu, Sung-Yool Choi and Yang-Kyu Choi, ”Structure Effects on Resistive Switching
    of Al/TiOx/Al Devices for RRAM Applications”, IEEE ELECTRON DEVICE LETTER, VOL. 29, NO. 4, APRIL 2008
    Slide 8 http://upload.wikimedia.org/wikipedia/commons/5/54/Perovskite.jpg (accessed 2008-11-04)
    Slide 8 Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive nonvolatile memories”, J
    Electroceram, DOI 10.1007/s10832-007-9081-y, 2007.
    Slide 9 Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive nonvolatile memories”, J
    Electroceram, DOI 10.1007/s10832-007-9081-y, 2007.
    Questions

    You might also like