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    Introduction

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    Dastan Prince

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    Introduction

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    Introduction

    Uploaded by

    Dastan Prince

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    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 20

    Introduction to VLSI

    Introduction
     Integrated circuits: many transistors on one chip.
     Very Large Scale Integration (VLSI): very many
     Complementary Metal Oxide Semiconductor
    – Fast, cheap, low power transistors
     Introduction: How to build your own simple CMOS
    chip
    – CMOS transistors
    – Building logic gates from transistors
    – Transistor layout and fabrication

    CMOS VLSI Design 2


    A Brief History
     1958: First integrated circuit
    – Flip-flop using two transistors
    – Built by Jack Kilby at Texas Instruments
     2003
    – Intel Pentium 4 mprocessor (55 million transistors)
    – 512 Mbit DRAM (> 0.5 billion transistors)
     53% compound annual growth rate over 45 years
    – No other technology has grown so fast so long
     Driven by miniaturization of transistors
    – Smaller is cheaper, faster, lower in power!
    – Revolutionary effects on society

    CMOS VLSI Design 3


    Invention of the Transistor
     Vacuum tubes ruled in first half of 20th century
    Large, expensive, power-hungry, unreliable
     1947: first point contact transistor
    – John Bardeen and Walter Brattain at Bell Labs

    CMOS VLSI Design 4


    Transistor Types
     Bipolar transistors
    – npn or pnp silicon structure
    – Small current into very thin base layer controls
    large currents between emitter and collector
    – Base currents limit integration density
     Metal Oxide Semiconductor Field Effect Transistors
    – nMOS and pMOS MOSFETS
    – Voltage applied to insulated gate controls current
    between source and drain
    – Low power allows very high integration

    CMOS VLSI Design 5


    Moore’s Law
     1965: Gordon Moore plotted transistor on each chip
    – Fit straight line on semilog scale
    – Transistor counts have doubled every 18 months
    1,000,000,000

    100,000,000
    Integration Levels
    Pentium 4
    Pentium III
    10,000,000 Pentium II
    Pentium Pro SSI: 10 gates
    Transistors

    Pentium
    Intel486
    1,000,000
    Intel386
    100,000
    80286
    MSI: 1000 gates
    8086
    10,000 8080

    1,000
    4004
    8008
    LSI: 10,000 gates
    1970 1975 1980 1985 1990 1995 2000
    VLSI: > 10k gates
    Year

    CMOS VLSI Design 6


    Silicon Lattice
     Transistors are built on a silicon substrate
     Silicon is a Group IV material
     Forms crystal lattice with bonds to four neighbors

    Si Si Si

    Si Si Si

    Si Si Si

    CMOS VLSI Design 7


    Dopants
     Silicon is a semiconductor
     Pure silicon has no free carriers and conducts poorly
     Adding dopants increases the conductivity
     Group V: extra electron (n-type)
     Group III: missing electron, called hole (p-type)

    Si Si Si Si Si Si
    - +

    + -
    Si As Si Si B Si

    Si Si Si Si Si Si

    CMOS VLSI Design 8


    p-n Junctions
     A junction between p-type and n-type semiconductor
    forms a diode.
     Current flows only in one direction

    p-type n-type

    anode cathode

    CMOS VLSI Design 9


    What is “CMOS VLSI”?
    • MOS = Metal Oxide Semiconductor (This used
    to mean a Metal gate over Oxide insulation)

    • Now we use polycrystalline silicon which is


    deposited on the surface of the chip as a gate.
    We call this “poly” or just “red stuff” to
    distinguish it from the body of the chip, the
    substrate, which is a single crystal of silicon.

    • We do use metal (aluminum) for


    interconnection wires on the surface of the
    chip.

    CMOS VLSI Design 10


    D

    S G D G

    Poly crossed over Diffusion  Field effect transistor (FET)

    Insulated Gate  Metal Oxide Semiconductor FET

    Source and Drain are Interchangeable

    CMOS VLSI Design 11


    nMOS Transistor
     Four terminals: gate, source, drain, body
     Gate – oxide – body stack looks like a capacitor
    – Gate and body are conductors
    – SiO2 (oxide) is a very good insulator
    – Called metal – oxide – semiconductor (MOS)
    capacitor Source Gate Drain
    Polysilicon
    – Even though gate is SiO2
    no longer made of metal
    n+ n+

    p bulk Si

    CMOS VLSI Design 12


    nMOS Operation
     Body is commonly tied to ground (0 V)
     When the gate is at a low voltage:
    – P-type body is at low voltage
    – Source-body and drain-body diodes are OFF
    – No current flows, transistor is OFF
    Source Gate Drain
    Polysilicon
    SiO2

    0
    n+ n+
    S D
    p bulk Si

    CMOS VLSI Design 13


    nMOS Operation Cont.
     When the gate is at a high voltage:
    – Positive charge on gate of MOS capacitor
    – Negative charge attracted to body
    – Inverts a channel under gate to n-type
    – Now current can flow through n-type silicon from
    source through channel to drain, transistor is ON
    Source Gate Drain
    Polysilicon
    SiO2

    1
    n+ n+
    S D
    p bulk Si

    CMOS VLSI Design 14


    pMOS Transistor
     Similar, but doping and voltages reversed
    – Body tied to high voltage (VDD)
    – Gate low: transistor ON
    – Gate high: transistor OFF
    – Bubble indicates inverted behavior
    Source Gate Drain
    Polysilicon
    SiO2

    p+ p+

    n bulk Si

    CMOS VLSI Design 15


    Power Supply Voltage
     GND = 0 V
     In 1980’s, VDD = 5V
     VDD has decreased in modern processes
    – High VDD would damage modern tiny transistors
    – Lower VDD saves power
     VDD = 3.3, 2.5, 1.8, 1.5, 1.2, 1.0, …

    CMOS VLSI Design 16


    Transistors as Switches
     We can view MOS transistors as electrically
    controlled switches
     Voltage at gate controls path from source to drain
    g=0 g=1

    d d d
    nMOS g OFF
    ON
    s s s

    d d d

    pMOS g OFF
    ON
    s s s

    CMOS VLSI Design 17


    CMOS Inverter

    A Y VDD
    0
    1

    A Y

    A Y
    GND
    CMOS VLSI Design 18
    CMOS Inverter

    A Y VDD
    0
    1 0 OFF
    A=1 Y=0

    ON
    A Y
    GND
    CMOS VLSI Design 19
    CMOS Inverter

    A Y VDD
    0 1
    1 0 ON
    A=0 Y=1

    OFF
    A Y
    GND
    CMOS VLSI Design 20

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