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Ac Analysis

1) The document discusses several models used to analyze BJTs in AC circuits, including the hybrid pi model, hybrid equivalent model, and Ebers-Moll model. 2) It explains the small-signal AC equivalent circuit model and how it defines important parameters like input and output impedance, currents, and voltage gain. 3) The hybrid equivalent model uses h-parameters to relate the input and output voltages and currents, and can be represented by an equivalent circuit with resistors and dependent current sources. 4) The Ebers-Moll model describes the operating states of a transistor through equations relating collector and emitter currents to junction voltages, and can be represented by a circuit with diodes and dependent

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419 views42 pages

Ac Analysis

1) The document discusses several models used to analyze BJTs in AC circuits, including the hybrid pi model, hybrid equivalent model, and Ebers-Moll model. 2) It explains the small-signal AC equivalent circuit model and how it defines important parameters like input and output impedance, currents, and voltage gain. 3) The hybrid equivalent model uses h-parameters to relate the input and output voltages and currents, and can be represented by an equivalent circuit with resistors and dependent current sources. 4) The Ebers-Moll model describes the operating states of a transistor through equations relating collector and emitter currents to junction voltages, and can be represented by a circuit with diodes and dependent

Uploaded by

GHOST 007
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© © All Rights Reserved
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AC Analysis ,Hybrid Model &

Ebers-Moll Model

Prepared By:
Yogendra Narayan
Introduction
• We now begin to examine the ac response of the BJT amplifier by
reviewing the models most frequently used to represent the
transistor in the sinusoidal ac domain.
• Magnitude of the input signal
• small-signal or large-signal techniques
• Three models commonly used in the small-signal ac analysis
• re model,
• Hybrid pi model
• Hybrid equivalent model
AMPLIFICATION IN THE AC DOMAIN
• Transistor can be employed as an amplifying device.
• output sinusoidal signal is greater than the input sinusoidal signal
• the output ac power is greater than the input ac power
• Conservation of energy
• total power output system cannot be greater than its power input
• the efficiency defined by η = Po/Pi cannot be greater than 1.
AMPLIFICATION IN THE AC DOMAIN
AMPLIFICATION IN THE AC DOMAIN
BJT TRANSISTOR MODELING

• AC equivalent circuit is determined,


• The schematic symbol for the device can be replaced by this
equivalent circuit
• And the basic methods of circuit analysis applied
Drawback
• Hybrid equivalent network
It is defined for a set of operating conditions that might not
match the actual operating conditions
• re model became the more desirable approach
• reduced version of the hybrid π model
As important parameter of the equivalent circuit was determined by the actual
operating conditions rather than using a data sheet value
• The re model also failed to include a feedback term which is
important some times
Small signal Ac equivalent Circuit
Small signal AC equivalent Circuit
• Define the ac equivalent that the parameters of interest such as Zi, Zo, Ii,
and Io
• input impedance is defined from base to ground,
• the input current as the base current of the transistor,
• the output voltage as the voltage from collector to ground,
• and the output current as the current through the load resistor RC .
Small signal AC equivalent Circuit
• If we establish a common ground and rearrange the elements of Fig.
(shown earlier), R 1 and R 2 will be in parallel, and R C will appear
from collector to emitter as shown in Fig below.
Small signal AC equivalent Circuit
• transistor is an amplifying device, we would expect some indication
• of how the output voltage V o is related to the input voltage V i — the voltage
gain.
• Note for Fig. of this configuration that the current gain is defined by Ai = Io/Ii.
THE HYBRID EQUIVALENT MODEL

The hybrid parameters as shown in Fig. are derived from the specification sheet for the 2N4400
transistor. The values are provided at a dc collector current of 1 mA and a collector-to-emitter
voltage of 10 V.
THE HYBRID EQUIVALENT MODEL
• The description of the hybrid equivalent model will begin with the
general two-port system of Fig. 5.93 . The following set of equations
(5.133) and (5.134) is only one of a number of ways in which the four
variables of Fig. 5.93 can be related.
THE HYBRID EQUIVALENT MODEL
• The parameters relating the four variables are called h-parameters ,
from the word “hybrid.”
• The term hybrid was chosen because the mixture of variables ( V and I
) in each equation results in a “hybrid” set of units of measurement
for the h -parameters.
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
• The complete “ac” equivalent circuit for the basic three-terminal
linear device is indicated in Fig. 5.96 with a new set of subscripts for
the h -parameters.
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
THE HYBRID EQUIVALENT MODEL
Ebers-Moll Model
• Device modelling aims at relating physical device parameters to
device characteristics.
• Important for integrated circuits. (Predict performance)
• More accurate -> More complex.
• Trade off between accuracy and complexity.
Ebers-Moll Model
• Transistor model describes operating states of a transistor.
• Information about the de characteristics of transistor.
• Active region
• Emitter junction is forward biased and collector junction is reverse biased.
Ebers-Moll Model
• The dependence of the currents in a transistor upon the junction
voltages, or vice-versa may be obtained by starting with Eq,
reproduced here

• In inverted mode of operation, equation corresponding may be


written as
Ebers-Moll Model
• Ebers-Moll model interpreting Eqs. 1 and 2 in terms of a circuit is
given in Fig. for a P-N-P transistor.
• It involves two ideal diodes connected back to back with reverse
saturation currents Ieo and lco and two dependent current-controlled
current sources shunting the ideal diodes.
Ebers-Moll Model
• By making the width of the base much larger than the diffusion length
of the minority carriers in the base, all the minority carriers will
recombine in the base and none will survive to reach the collector.
• In such a condition transport factor β and hence also current gain
factor α will be zero.

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