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CHAPTER 5
TRANSISTOR BIAS
CIRCUITS
1
OBJECTIVES

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 Discuss the concept of dc biasing of
a transistor for linear operation
 Analyze voltage-divider bias, base
bias, emitter bias and collector-
feedback bias circuits.

2
LECTURE OUTLINE

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1. Objectives
2. Introduction
3. DC operating point
4. Voltage-divider bias
5. Other bias methods
 Base bias
 Emitter bias
 Collector-feedback bias
6. Summary 3
INTRODUCTION

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 biasing is used to establish a fixed level of
current and voltage.
 Transistor must be properly biased with dc voltage
to operate as a linear amplifier.
 If amplifier is not biased with correct dc voltages
on input and output, it can go into saturation or
cutoff when the input signal applied.

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DC OPERATING
POINT
5
DC OPERATING POINT

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 The goal of amplification in most cases is to
increase the amplitude of an ac signal without
altering it.
 Improper biasing can cause distortion in the
output signal.

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DC OPERATING POINT

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 The purpose of biasing a circuit is to establish a
proper stable dc operating point (Q-point). The
goal of Q-point such that it does not go into
saturation or cutoff when an ac signal is applied.

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 Q-point of a circuit: dc operating point of amplifier
specified by VCE and IC. These values are called the
coordinates of Q-point.

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 Refer to figure a, given IB = 200μA and βDC=100. IC=βDCIB
so IC=20mA and

VCE  VCC  I C RC  10V  (20mA )( 220)  10  4.4  5.6V

 Figure b, VBB is increased to produce IB of 300μA and IC
of 30mA.
VCE  VCC  I C RC  10V  (30mA )( 220)  10  6.6  3.4V

 Figure c, VBB is increased to produce IB of 400μA and

IC=40mA. So, VCE is:

VCE  VCC  I C RC  10V  (40mA )( 220)  10  8.8  1.2V

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9
DC OPERATING POINT-DC LOAD
LINE
Recall that the collector characteristic curves graphically

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
show the relationship of IC and VCE for different IB.
 When IB and IC increases and VCE decreases or vice-versa.
Each separate Q-point is connected through dc load line. At any
point along line, values of IB, IC and VCE can be picked off the
graph.
 Dc load line intersect VCE axis at 10V, where VCE=VCC. This is
cutoff point because IB and IC zero. Dc load line also intersect
IC axis at 45.5mA ideally. This is saturation point because IC
is max and VCE=0.

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EXAMPLE 1
 Determine Q-point in figure below. Assume

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βDC=200.

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SOLUTION EXAMPLE 1
Q-point is defined by values of IC and VCE.

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

VBB  VBE 10  0.7

IB    198A
RB 47k
I C   DC I B  200(198 )  39.6mA
VCE  VCC  I C RC  20V  (39.6mA)(330)  6.93V

 Q-point is at IC=39.6mA and VCE=6.93V. Since IC(cutoff) =0,

we need to know IC(sat) to determine variation in IC can
occur and still in linear operation.
VCC 20
I C ( sat )    60.6mA
RC 330

12
 EXAMPLE 2
 Figure below shows the collector characteristic

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curves and dc load line. Determine the following
a) Collector saturation current

b) VCE at cutoff

c) Q-point values of IB, IC and VCE

13
SOLUTION EXAMPLE 2

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IB
IC

VCE

IC = 50mA
14
VCE cutoff = 10V
IC = 25mA, IB = 250μA, VCE = 5V
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VOLTAGE-DIVIDER
BIAS
15
VOLTAGE-DIVIDER BIAS

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 Voltage-divider bias is the most
widely used type of bias circuit. Only
one power supply is needed and
voltage-divider bias is more
stable(independent) than other bias
types.
 dc bias voltage at base of transistor
is developed by a resistive voltage-
divider consists of R1 and R2.
 Vcc is dc collector supply voltage. 2
current path between point A and
ground: one through R2 and the
other through BE junction and RE.

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VOLTAGE-DIVIDER BIAS

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 If IB is much smaller than I2, bias circuit is viewed as voltage
divider of R1 and R2 as shown in Figure a.
 If IB is not small enough to be neglected, dc input resistance
RIN(base) must be considered. RIN(base) is in parallel with R2
as shown in figure b.

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INPUT RESISTANCE AT TRANSISTOR
BASE

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 VIN is between base and ground
and IIN is the current into base.
 By Ohm’s Law,
RIN(base) = VIN / IIN
 Apply KVL, VIN=VBE+IERE
 Assume VBE<<IERE, so VIN≈IERE
 Since IE≈IC=βDCIB,
VIN≈ βDCIBRE
 IIN=IB, so
RIN(base)= βDCIBRE / IB
RIN(base) = βDCRE

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ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT

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ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT

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 Total resistance from base to ground is:

R2 R IN ( base)
R2  DC R E
 A voltage divider is formed by R1 and resistance from base to
ground in parallel with R2.
 R2  DC R E 
VB   VCC
 R1  R  DC RE 
 2 

 If βDCRE >>R2, (at least ten times greater), then the formula
simplifies to
 R2 
VB   VCC 20

 R1  R 2 
ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT
Now, determine emitter voltage VE.

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

VE=VB – VBE
 Using Ohm’s Law, find emitter current IE.

IE = VE / RE
 All the other circuit values

I C ≈ IE
VC = VCC – ICRC
 To find VCE, apply KVL:

VCC – ICRC – IERE – VCE =0

 Since IC ≈ IE,

VCE ≈ VCC – IC (RC + RE) 21

EXAMPLE 3

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 Determine VCE and IC in voltage-divider biased
transistor circuit below if βDC=100.

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SOLUTION EXAMPLE 3
 Determine dc input resistance at base to see if it can be

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neglected.
R IN ( base)   DC R E  100(560)  56k

 RIN(base)=10R2, so neglect RIN(base). Then, find base

voltage  R2   5.6k 
VB   VCC   10V  3.59V
 1
R  R 2   15.6 k 
 So, emitter voltage
VE  VB  VBE  3.59  0.7  2.89V
 And emitter current V E 2.89
IE    5.16mA
RE 560
 Thus, I  5.16mA
C
 And VCE is
VCE  VCC  I C ( RC  RE )  10  5.16m(1.56k )  1.95V 23
VOLTAGE-DIVIDER BIAS FOR
PNP TRANSISTOR

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 Pnp transistor has opposite polarities from npn.
To obtain pnp, required negative collector supply
voltage or with a positive emitter supply voltage.
The analysis of pnp is basically the same as npn.

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a. Negative collector b. Positive emitter
Supply supply voltage
ANALYSIS OF VOLTAGE BIAS
FOR PNP TRANSISTOR

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 Base voltage V   R1 
V EE
B R R  R 
 1 2 DC E 

 Emitter voltage VE  VB  VBE

VEE  VB  I B RB  I E RE  VBE
 By Ohm’s Law,
VEE  VB  VBE
IE 
R  RB
E DC
VC  I C RC 25
 And,
VEC  VCC  I C RC  I E RE
 EXAMPLE 4

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 Evaluate IC and VEC for pnp transistor circuit in Figure below.
Given VEE = +15V, R1 = 63kΩ, R2 = 27kΩ, RC = 1.8kΩ, RE =
2.6kΩ, βDC =120.

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SOLUTION EXAMPLE 4
𝑹𝟏
𝑽𝑩 = 𝑽𝑬𝑬
𝑹𝟏 + 𝑹𝟐

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𝟔𝟑𝒌Ω
𝑽𝑩 = 𝟏𝟓𝑽 = 𝟏𝟎. 𝟓𝑽
𝟔𝟑𝒌Ω +𝟐𝟕𝒌Ω

𝑹𝟏 𝑹𝟐 𝟔𝟑𝒌𝜴 𝟐𝟕𝒌𝜴
𝐑𝐁 = = = 𝟏𝟖. 𝟗𝒌𝜴
𝑹𝟏 + 𝑹𝟐 𝟔𝟑𝒌𝜴+𝟐𝟕𝒌𝜴

𝑽𝑬𝑬 −𝑽𝑩𝑬 −𝑽𝑩 𝟏𝟓−𝟎.𝟕−𝟏𝟎.𝟓 𝟑.𝟖𝑽

𝐈𝐄 = 𝑹 = 𝟏𝟖.𝟗𝒌𝜴 = = 𝟏. 𝟑𝟖 𝒎𝑨
𝑹𝑬 +𝜷 𝑩 𝟐.𝟔𝒌𝜴+ 𝟏𝟐𝟎 𝟐.𝟕𝟓𝟕𝒌𝜴
𝑫𝑪

IC = IE = 1.38 mA

VEC = VEE - IERE -ICRC

VEC = 15 - (1.38mA) (2.6kΩ) - (1.38mA) (1.8kΩ)
VEC = 15 – 3.59 – 2.48 V = 8.93 V 27
EXAMPLE 5
 Figure below shown the schematic with a negative supply

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voltage, determine IC and VCE for a pnp transistor circuit
with given values: R1 = 25kΩ, R2 = 60kΩ, RC = 6kΩ, RE
= 9kΩ, VCC = -12V, and βDC = 90

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SOLUTION EXAMPLE 5
𝑹𝟐
𝑽𝑩 = 𝑽𝑪𝑪

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𝑹𝟏 + 𝑹𝟐
𝟔𝟎𝒌Ω
𝑽𝑩 = (−𝟏𝟐𝑽) = −𝟖. 𝟒𝟕𝑽
𝟐𝟓𝒌Ω +𝟔𝟎𝒌Ω

𝑹𝟏 𝑹𝟐 𝟐𝟓𝒌𝜴 𝟔𝟎𝒌𝜴
𝐑𝐁 = = = 𝟏𝟕. 𝟔𝟓𝒌𝜴
𝑹𝟏 + 𝑹𝟐 𝟐𝟓𝒌𝜴+𝟔𝟎𝒌𝜴
− 𝑽𝑩 +𝑽𝑩𝑬 − −𝟖.𝟒𝟕 +𝟎.𝟕 𝑽 𝟗.𝟏𝟕𝑽
𝐈𝐄 = 𝑹 = 𝟏𝟕.𝟔𝟓𝒌𝜴 = = 𝟎. 𝟗𝟗𝟕 𝒎𝑨
𝑹𝑬 + 𝑩 𝟗𝒌𝜴+
𝟗𝟎
𝟗.𝟏𝟔𝟗𝒌𝜴
𝜷𝑫𝑪

IC = IE = 0.997 mA
VCE = VCC + ICRC + IERE
VCE = -12V + (0.997mA) (6kΩ) + (0.997mA) (9kΩ)
VCE = -12+5.98+8.97
VCE = 2.95V

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EXAMPLE 6

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 Construct a complete circuit required to replace the
transistor in Figure below with a pnp transistor. Given VCC
= 10V, R1 = 78kΩ, R2 = 100kΩ, RC = 18kΩ, RE = 8kΩ.

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SOLUTION EXAMPLE 6

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31
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OTHER BIAS
METHODS
32  BASE BIAS
 EMITTER BIAS
 COLLECTOR-FEEDBACK BIAS
OTHER BIAS METHODS – BASE
BIAS

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 KVL apply on base circuit.
VCC – VRB – VBE = 0 or VCC – IBRB – VBE =0
 Solving for IB, VCC  VBE
IB 
RB

 Then, apply KVL around collector

 circuit. VCC – ICRC – VCE = 0
 We know that IC = βDCIB,

 VCC  VBE 
I C   DC   33

 RB 
BASE BIAS

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 From the equation of IC, note that IC is
dependent on DC. When DC vary, VCE
also vary, thus changing Q-point of
transistor.
 This type of circuit is beta-dependent
and very unstable. Recall that DC
changes with temperature and collector
current. Base biasing circuits are
mainly limited to switching
applications. 34
EXAMPLE 7

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 Determine IB, IC and VCE for a base-biased transistor
circuit with the following values: βDC = 160, VCC = 18V,
RB = 43kΩ and RC = 190Ω.

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SOLUTION EXAMPLE 7
𝑉𝐶𝐶 −𝑉𝐵𝐸 18−0.7 17.3𝑉
𝐼𝐵 = = = = 402.33𝜇𝐴

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𝑅𝐵 43𝑘 43𝑘

𝑉𝐶𝐶 −𝑉𝐵𝐸 18−0.7

𝐼𝐶 = 𝛽𝐷𝐶 = 160 = 64.37𝑚𝐴
𝑅𝐵 43𝑘

VCE = VCC – ICRC

VCE = 18 – (64.37mA)(190Ω)
VCE = 18 -12.23
VCE = 5.77V

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EMITTER BIAS

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37
Npn transistor with emitter bias
 EMITTER BASE

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 This type of circuit is independent of βDC making it as stable as the
voltage-divider type. The drawback is that it requires two power
suppliers
 Apply KVL and Ohm’s Law,
IBRB + IERE + VBE = VEE IE
IB 
 Since IC ≈ IE and IC = βDCIB,  DC
VEE  VBE
IE 
 Solve for IE or IC, RB
( )  RE

 Voltage equations for emitter base circuit,
VE = VEE - IERE
38
VB = VE + VBE
VC = VCC - ICRC
 EMITTER BASE

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 Apply KVL and Ohm’s Law,
IBRB + IERE + VBE = VEE
 Since IC ≈ IE and IC = βDCIB,
IE
IB 
 DC
 Solve for IE or IC,

 VEE  VE
IE 
RE

39
EXAMPLE 8

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 Calculate IE and VCE for the circuit below using VE = -1V
and IC = IE, RB = 47kΩ, RC = 4.7kΩ, RE = 10kΩ, VCC = 15V
and VEE = -15V

40
SOLUTION EXAMPLE 8

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𝑉𝐸 = −1𝑉

−𝑉𝐸𝐸 + 𝑉𝐸 − −15 − 1 14
𝐼𝐸 = = = = 1.4𝑚𝐴
𝑅𝐸 10𝑘Ω 10𝑘Ω

𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 = 15𝑉 − 1.4𝑚𝐴 4.7𝑘Ω = 8.4𝑉

𝑉𝐶𝐸 = 𝑉𝐶 − 𝑉𝐸 = 8.4 − −1 = 9.4𝑉

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COLLECTOR-FEEDBACK BIAS

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Collector-feedback bias is
kept stable with negative
feedback, although it is not
as stable as voltage-
divider or emitter. With
increases of IC, VC decrease
and causing decrease in
voltage across RB, thus IB
also decrease. With less IB,IC
go down as well.
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ANALYSIS OF COLLECTOR-
FEEDBACK CIRCUIT

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 By Ohm’s Law, VC  VBE
IB 
RB

 Collector voltage with assumption IC>>IB.

 VC = VCC – ICRC
 And IB = IC / βDC

 So, collector current equation

VCC  VBE
IC 
RC  RB /  DC
 Since emitter is ground, VCE = VC.
 VCE = VCC - ICRC 43
EXAMPLE 9

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 Determine IC, VB, VC and Power rating in figure below.

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 SOLUTION EXAMPLE 9

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𝑉𝐶𝐶 −𝑉𝐵𝐸 3𝑉−0.7𝑉 2.3𝑉 2.3𝑉
𝐼𝐶 = 𝑅𝐵 = 33𝑘 = = = 1.06𝑚𝐴
𝑅𝐶 + 1.8𝑘+ 1.8𝑘+366.67 2.17𝑘
𝛽𝐷𝐶 90

𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 = 3𝑉 − 1.06𝑚𝐴 1.8𝑘 = 3𝑉 − 1.9𝑉 = 1.1𝑉

𝐼𝐶 1.06𝑚𝐴
VB = VC – VBE @ 𝐼𝐵 = = = 11.78μ𝐴
𝛽𝐷𝐶 90
VB = 1.1V – 0.7V VB = IBRB
VB = 0.4V VB = (11.78μA)(33k)
VB = 0.39V

P = IC2RC @ P = ICVRC
P = (1.06mA)2(1.8kΩ) P = (1.06mA) (1.06mA)(1.8kΩ)
P = 2.02 mW P = 2.02 mW 45
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SUMMARY
46
6. SUMMARY

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 The purpose of biasing is to establish a
stable operating point (Q-point).
 The dc load line helps to establish the Q-
point for a given collector current.
 Q-point is used to avoid amplifier goes into
saturation and cutoff
 The linear region of a transistor is the
region of operation within saturation and
cutoff.
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6. SUMMARY

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 Voltage-divider bias is most widely used
because it is stable and uses only one
voltage supply.
 Base bias is very unstable because it is β
dependent.
 Emitter bias is stable but require two
voltage supplies.
 Collector-back is relatively stable when
compared to base bias, but not as stable 48
as voltage-divider bias.
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