Lecture 5
Lecture 5
a)
Example (Ideal diode in circuit)
Ideal diode application:
Rectification
Exercise 3.1 & 3.2
Figure shows a circuit for charging a 12-V battery. If vS is a sinusoid with 24-V peak
amplitude, find the fraction of each cycle during which the diode conducts. Also, find
the peak value of the diode current and the maximum reverse-bias voltage that
appears across the diode.
Example 4.1 Solution
1. Fraction during which the diode conducts:
-thediodestartsconducting at𝑣𝑠 =12v
∴ 24𝑠𝑖𝑛𝑥 = 12
⇒ 𝑥 = 30𝑜 𝑜𝑟 (180− 30 =)150𝑜
⇒ 𝑐𝑜𝑛𝑑𝑢𝑐𝑡𝑖𝑜𝑛 𝑎𝑛𝑔𝑙𝑒 = 150 − 30 = 120𝑜
Which means that the diode is conducting for (120/360) one-third of the cycle
2. Peak Diode current
𝑝𝑒𝑎𝑘 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑎𝑐𝑟𝑜𝑠𝑠 𝑟𝑒𝑠𝑖𝑠𝑡𝑜𝑟 = 𝑣𝑠 𝑝 𝑒 𝑎 𝑘 −
12𝑣
𝑣𝑅 = 24−12 = 12𝑣
12
𝐼 = = 0.12 A
100
• Solve for V
• Remember, make a
plausible assumption
first, solve and check
for consistency
Circuits with ideal diode
• Solve for V
• Remember, make a
plausible assumption
first, solve and check
for consistency
Real Diode
PN Junction as a Diode
• The characteristic curve consists of three
distinct regions
– The forward-bias region, determined by v > 0
– The reverse-bias region, determined by v < 0
– The breakdown region, determined by v < –VZK
The PN Junction as a Diode
Forward Biased Region
• The forward-bias region of operation is entered
when the terminal voltage v is positive. Current
increases exponentially in this region.
𝑣
𝑖= 𝐼𝑠 (𝑒 / n𝑉𝑇 − 1)
– Where, Is is directly proportional to the cross-sectional
area of the diode.
• Thus doubling of the junction area results in a diode with
double the value of IS.
– It is also dependent on temperature (Doubles every 5 degree)
– IS is in the order of 10–15 A.
Characteristics of Junction Diodes
i I S (ev / nVT 1)
• VT Thermal Voltage is a constant
• VT = kT/q
• k is Boltzmann’s Const
• k = 1.38 x 10-23 joules/kelvin
• T absolute temp in kelvins
• T = 273 + temp in C0
• q magnitude of electronic charge
• q = 1.60 x 10-19 coulomb
Lecture 05 Electronics I 16
Characteristics of Junction Diodes
i I S (ev / nVT 1)
• VT = 25.2 mV
• at room temp. 200 C
• for circuit analysis VT 25 mV
• A slightly higher ambient temp of 250 C is assumed
inside a cabinet and VT = 25.8 mV
• n is any value between 1 and 2
• Depends upon material & physical structure of diode
• Standard IC fabricated diodes n= 1
• for circuit analysis n= 1
Lecture 05 Electronics I 17
Forward Bias Region
Forward Bias Region
• The graph shows the exponential increase in
current as the terminal voltage becomes
positive showing that 𝑖 ≫ 𝐼𝑠
∴ 𝑖 ≅ 𝐼𝑠 𝑒 𝑣/𝑉 𝑇
𝑖
𝑜𝑟 𝑣 = 𝑉𝑇 ln | |
𝐼𝑆
Example
• A silicon diode said to be 1mA device displays a
forward voltage of .7 at current of 1mA. Evaluate
scaling current Is that can apply for 1A diode that
conduct 1A at .7V?
• 𝑖 ≅ 𝐼𝑠 𝑒 𝑣 /𝑉 𝑇
𝑖𝑠 ≅ 𝐼/(𝑒 𝑣 /𝑉 𝑇 )
= 6.9144001e-16
i I S (e v / nVT
1)
• Reverse Bias Region
• v<0
i I S
• Breakdown Region v < – VZK
Lecture 05 Electronics I 26
Breakdown Region
• The breakdown region is entered when the
magnitude of the reverse voltage exceeds a
threshold value that is specific to a particular
diode (given in datasheets as breakdown
voltage), called the breakdown voltage.
• This is the voltage at the “knee” of the i–v curve
shown and is denoted by VZK, where the
subscript Z stands for zener and K denotes
knee.
Breakdown Region
• In the breakdown region the reverse current
increases rapidly, with the associated increase
in voltage drop being very small.
• Diode breakdown is normally not destructive,
provided the power dissipated in the diode is
limited by external circuitry to a “safe” level
normally specified on the device data sheets.
The PN Junction as a Diode
Peak Inverse Voltage (PIV)
• An important parameter while choosing
diodes in the PIV
• The PIV rating of a diode is the maximum
reverse biased voltage that can be applied
across it before reaching breakdown
• For a particular diode connected in the circuit
1.6mA current is flowing when voltage of 0.7V is
applied. To change certain circuit parameters we
need current of 1mA flowing from the diode. Find
the voltage across diode for 1mA current.