Bipolar Junction transistor

Holes and electrons Three terminal device

determine device characteristics
Control of two terminal currents

Amplification and switching through 3rd contact

How can we make a BJT from a pn diode?
• Take pn diode
V • Remember reverse bias
I
characteristics
• Reverse saturation current: I0
p n

I0 V
 Test: Multiple choice
Why is the reverse bias current of a pn diode small?

1. Because the bias across the depletion region is

small.
2. Because the current consist of minority carriers
injected across the depletion region.
3. Because all the carriers recombine.
 Test: Multiple choice
Why is the reverse bias current of a pn diode small?

1. Because the bias across the depletion region is

small.
2. Because the current consist of minority carriers
injected across the depletion region.
3. Because all the carriers recombine.
How can we make a BJT from a pn diode?
• Take pn diode
V • Remember reverse bias
I
characteristics
e- • Reverse saturation current: I0
p n Caused by minority carriers
h+ swept across the junction
• np and pn low
I

I0 small

I0 V
 V
I

e-
p n Test: Multiple choice
h+
• If minority carrier concentration
I
np and/or pn
can be increased what will
happen to I0?

I0 V 1. Increase
2. Decrease
3. Remain the same
 • If minority carrier concentration
V np and pn
I
can be increased near the
depletion region edge, then I0
e- will increase.
p n
h+
• If np and pn higher
I

|I0| larger

I0 V
 V
I

e-
p n Test: True-False
h+

I
If we only increase pn
then |I0| will still increase.

I0 V
 How can we increase the minority carrier
concentration near the depletion region edge?
• Take pn diode
V
I • Remember forward bias
characteristics
h+ • How can we make a hole
p n
injector from a pn diode?
e-
1. By increasing the applied bias, V.
2. By increasing the doping in the p region only
3. By applying a reverse bias.
Hole injector • Take pn diode
V
I • Remember forward bias
characteristics
h+ • When using a p+n junction
p+p n
e-
diode current If ≈ hole current
I • Ip  pno (eeV/kT-1)
In  npo (eeV/kT-1)
Since NA >> ND
np << pn
If V
→ Ip >> In
 Thus:
A forward biased p+n diode is a good hole injector
A reverse biased np diode is a good minority carrier collector
V
V I0
I

h+ e-
p+ n n p
h+
e-
If W large, then?
W
1. Recombination of excess holes will occur and excess will be 0 at end of layer
2. Recombination of excess holes will occur and excess will be large at end of layer
3. No recombination of excess holes will occur.
4. Recombination of excess electrons will occur and excess will be np0 at end of layer
Thus:
A forward biased p+n diode is a good hole injector
A reverse biased np diode is a good minority carrier collector
V
V I0
I
dpn
h+ e-
p+ n n p
h+ x
e- L
p
If W large → holes
W recombine
Excess hole
concentration reduces
exponentially in W to
some small value.
What is the magnitude of the hole diffusion current at the edge
x=W of the “green” region?
V
V I0
I
dpn
h+ e-
p+ n n p
h+ x
e- L
p

W
1. Magnitude of hole diffusion current at x=W is same as at x=0
2. Magnitude of hole diffusion current at x=W is almost 0
3. Magnitude of hole diffusion current cannot be derived from this layer.
Thus:
A forward biased p+n diode is a good hole injector
A reverse biased np diode is a good minority carrier collector
V
V I0
I
dpn
h+ e-
p+ n n p
h+ x
e- L
p
if W large → holes
W recombine
Since gradient of dpn @
x=W is zero, hole
Reduce W
diffusion current is also
zero
 BJT p+np
E: emitter V VVBC
B: base EB IE IC
C: collector

p+ B
n p
E C
IC W < Lp

IE

VBC
 Base: Short layer with
recombination and no Ohmic
contacts at edges.
Single junction

pno pno
npo npo

Double junction

npo npo
No Ohmic contact thus minority carrier concentration not pno
 How will we calculate the minority
carrier concentration in the base?
dp( x, t )  2dp( x, t ) dp( x, t )
Rate equation  Dp 
t x 2
p
d 2dp( x) dp( x)
Steady state Dp  0
dx 2
p
General solution of second order differential equation
 x  x
dp( x)  C1 exp   C2 exp 
 Lp   Lp 
   

With Ohmic contact C1=0 Without Ohmic contact C1≠0

C2≠0 C2≠0
 Planar BJT - npn
For integrated circuits (ICs) all contacts have to be on the top

n+-well for emitter

p-well for base
p+ Si
Ohmic contact B E C
n+ Si
device insulation ohmic contact
n+ Si
p+ Si p+ Si
p Si
n Si

p Si

p-substrate
n-well for collector
 Carrier flow in BJTs
E B C
IE p+ n p IC
holes
e- gain, reverse bias
IB

holes
IE
IC
ICB0
I’B I”B
Recombination
e- loss, forward bias e- loss

IB = I’B + I”B – ICB0

IB
 Control by base current : ideal case.
Based upon space charge neutrality
Electrostatically neutral
Base region
IE = Ip
h+ t transit time
t < p
e-
p recombine with
Wb << Lp
Based on the given timescales, holes can pass through the narrow base
before a supplied electron recombines with one hole: ic/ib = p/t
The electron supply from the base contact controls the forward bias to
ensure charge neutrality!
 How good is the transistor?

• Wish list:
E IEp B C
IC
• IEp>>IEn
or g = IEp/(IEn + IEp) ≈ 1
g: emitter injection efficiency
Injection of carriers

equilibrium
• IC ≈ IEp
e- VBE>0 or B= IC/IEp ≈ 1
IEn B: base transport factor
h + W b < Lp x or a= IC/IE ≈ 1
a: current transfer ratio
• IB ≈ IEn + (1-B) IEp
No amplification! thus b= IC/IB = a/(1-a)
b: current amplification factor
Amplification!
ICB0 ignored
 Review 1 – BJT basics
IC
Forward active mode (ON)
IE

VBC
V VV
EB IE IC BC

p+ B
n E p
E C
W < Lp
Forward biased p+n
junction is a hole injector Reverse biased np junction is
a hole collector
 Review 1 – BJT basics
IC
Forward active mode (ON)
IE

VBC
V V
EB IE IB=I’B+I”B I C VBC

p+ B
n E p
E C
W < Lp
Forward biased p+n
junction is a hole injector Reverse biased np junction is
a hole collector
 Review 2
Amplification?

IB = I’B + I”B – ICB0

Recombination only case: I’B, ICB0 negligible

ic/ib = p/t Carriers supplied by the base current stay much

longer in the base: p than the carriers supplied
b = p/t
by the emitter and travelling through the base: t.
But in more realistic case: I’B is not negligible

b = IC/IB With IB electrons supplied by base = I’B = In

IC holes collected by the collector = Ip
 Currents?

• In order to calculate currents in pn junctions, knowledge of

the variation of the minority carrier concentration is
required in each layer.
• The current flowing through the base will be determined by
the excess carrier distribution in the base region.
• Simple to calculate when the short diode approximation is
used: this means linear variations of the minority carrier
distributions in all regions of the transistor. (recombination
neglected)
• Complex when recombination in the base is also taken into
account: then exponential based minority carrier
concentration in base.
 Minority carrier distribution
• Assume active mode: VEB>0
& VBC<0
E B C • Emitter injects majority carriers
into base.
dpn(0)=pno (exp(VEB/VT)-1)

dp(x)
p(x) • Collector collects minority
carriers from base.
B dpn(Wb)=pno (exp(VBC/VT)-1)
DpE

Without recombination
pn0 With recombination
pn0 DpC
x
00 Wb
 Currents: simplified case
Assume I”B=0 & IBC0= 0
dp(x)

• Then IE = total current crossing

the base-emitter junction
DpE B
• Then IC = IEp gradient of excess
hole concentration in the base

DpC • IB without recombination is the

x
loss of electrons via the BE
0 Wb junction: I’B
• Then IB = gradient of excess
electron concentration in the
emitter
See expressions for diode current for short diode
 Narrow base: no recombination: Ip
→ minority carrier density gradient in the base

DpE = pn0(e eVEB/kT – 1) ≈ pn0 e eVEB/kT dp(x)

DpC = pn0(e –e|VBC|/kT – 1) ≈ -pn0
DpE
Linear variation of excess carrier concentration:
dp( x)  Ax  B
DpE  DpC DpE DpC
A 
 Wb Wb
0 Wb x
B  DpE  DpC  DpE
 x 
dp( x)  DpE 1  

 W b
Note: no recombination
 Collector current: Ip
ddp( x)
Diffusion current: I p  eAD p
dx
ddp( x) DpE

dx Wb  eVEB 
 
 kT 
Dp E eADp pn0 e
Hole current: I p  eADp 
Wb Wb

Collector current I C  I p No recombination, thus all injected

holes across the BE junction are
collected.

Base current??
 Look at emitter: In
→ minority carrier density gradient in the emitter
Dnp = np0(e eVEB/kT – 1) ≈ np0 e eVEB/kT dn(x)

Dnp
Linear variation of excess carrier concentration:
dn( x)  Ax  B
n p0  Dn p Dn p 0
A 
xe xe x
xe 0
B  Dn p
 Dn p 
dn( x)     x  Dn p
 xe 
 Base current: In
ddn( x)
Diffusion current: I n  eADn
dx

 eVEB 
 
 kT 
eADn n p0 e
Base current:I B  In 
xe

The base contact has to re-supply only the electrons that are
escaping from the base via the base-emitter junction since no
recombination I”B=0 and no reverse bias electron injection
into base ICB0=0.
 Emitter current
The emitter current is the total current flowing through the
base emitter contact since IE=IC+IB (current continuity)

 eVEB 
 Dn n p0 D p pn0   
Emitter current: I E  I n  I p  eA  e

 kT 

 xe WB 

I C I p D p pn0 xe
Current gain: b   
I B I n Dn n p0Wb
 Short layer approach – summary
forward active mode

dc(x)
IE = IpEB + InEB
DpE
IC = IpBC + InBC
DnE
IC ≈ IpBC = IpEB

IE = IB + IC
DpC x
IB = IE - IC DnC
-Xe 0 Wb Xc
IB = InEB
 General approach also taking
recombination into account.
forward active mode

dc(x)

DpE

DnE

x
-Xe -LpE DpC Xc
DnC LpC
0 Wb < LnB
 Which formulae do we use for the excess minority
carrier concentration in each region?
forward active mode
dc(x)

DpE

DnE

x
-Xe -LpE DpC Xc
DnC LpC
0 Wb < LnB
Emitter
Collector use LONG diode approximation
dnpE(x)=DnE exp(-(-x)/LpE)
dnpC(x)=DnC exp(-x/LpC)
 In the base we must take recombination
into account → short diode
approximation cannot be used!
dp(x)
Excess hole concentration dp(x):

d 2dp ( x) dp ( x) DpE
From: 2
 2
dx Lp

Exact solution of differential equation:

dp(x) = C1 ex/Lp + C2 e-x/Lp x
DpC
Wb
Constants C1, C2:
DpE = dp(x=0)
DpC = dp(x=Wb)
 In the base with recombination → long
diode approximation can also not be
used!
dp(x)
Exact solution of differential equation:

dp(x) = C1 ex/Lp + C2 e-x/Lp DpE

Long diode approximation:

dp(x) = C3 e-x/Lp
Boundary condition at BC x
junction cannot be guaranteed DpC LnB
Wb
http://www.ecse.rpi.edu/~schubert/Course-ECSE-2210-Microelectronics-Technology-2010/
 Extraction of currents in the
general approach.
forward active mode

dc(x)
IE = IpEB + InEB

IC = IpBC + InBC DpE

IC ≈ IpBC
DnE
IE = IB + IC
IB = IE - IC x
-Xe -LpE DpC Xc
DnC LpC
IB = InEB+ IpEB - IpBC 0 Wb < LnB

Term due to recombination

 Currents: Special case when only
recombination in base current is taken
into account: Approximation: IB’=0
dp(x)

DpE B
Starting point:
• Assume IE=IEp & IBC0= 0

• Then IE = Ip(x=0)
DpC 0 Wb
x
and IC = Ip(x=Wb)

• IB=IE - IC =I”B
 All currents are then determined by the
minority carrier gradients in the base.

Injection at emitter side: DpE = pn0(e eVEB/kT – 1)

Collection at collector side: DpC = pn0(e eVCB/kT – 1)
dp(x)

DpE IE = Ip(x=0)

B IC = Ip(x=Wb)
DpC x
0 Wb
 Expression of the diffusion currents

Diffusion current: Ip (x) = -e A Dp ddp(x)/dx

Emitter current: IE ≈ Ip (x=0)
Collector current: IC ≈ Ip (x=Wb)
Base current: IB ≈ Ip (x=0) - Ip (x=Wb) Hyperbolic functions

IE ≈ e A Dp/Lp (DpE ctnh(Wb/Lp) - DpC csch(Wb/Lp) )

IC ≈ e A Dp/Lp (DpE csch(Wb/Lp) - DpC ctnh(Wb/Lp) )
IB ≈ e A Dp/Lp ((DpE + DpC) tanh(Wb/2Lp) )

Superposition of the effects of injection/collection at

each junction!

Note: only influence of recombination

 Non-ideal effects in BJTs
• Base width modulation
V VVBC
BE IE IC

p+ Bn p
E C
Original base width
Depletion width
Effective base width changes with VBC
Metallurgic junction
 Base width modulation
• Early voltage: VA
 eVBE  base width modulated
Dp pn0  
I c  eA e  kT 
W
Wbb iC

ideal IB

VA -vCE
 Conclusions

• Characteristics of bipolar transistors are based on

diffusion of minority carriers in the base.
• Diffusion is based on excess carrier concentrations:
– dp(x)
• The base of the BJT is very small:
– dp(x) = C1 ex/Lp + C2 e-x/Lp
• Base width modulation changes output impedance of
BJT.
Transistor switching

Ic

t
p-type material
n-type material

iC

iB RL ib higher
iC
RS ECC
ECC /RL
ib
es iE On

es
-vCE
ECC
t Off
 iC

iC
ic=biB

RL -vCE

iB

ECC
RS
es

Es
t
iE
-Es
 iC

ic=biB
iC

RL -vCE

ECC

RS
es

Es
t iE

-Es
 iC
ic≠biB
iC

RL -vCE

ECC

RS
es Ic= ECC /RL

Es
t iE

-Es
 Switching cycle
iB
IB IB≈Es/RS
Switch to ON
iC
Switch OFF
iB RL
-IB
ECC dp
RS
QB DpE
t2
es iE DpE
Es
Qs ts
-Es t DpE
t1 DpC
iC
ECC /RL t1 ts t2 t’s 0
-pn x
tsd t0
iC Wb
IC IC≈ECC/RL
-vCE
ECC
 Charge in base (linear)
• Cut-off • Saturation
– VEB<0 & VBC<0 – VEB>0 & VBC≥0
– DpE=-pn & DpC=-pn – DpE = pn (eeVEB/kT – 1)
– DpC = 0 (VBC=0)

dp dp
DpE VBC>0
DpE
DpC
-pn x x
Wb Wb
 Currents - review.
forward active mode

dc(x)
IE = IpEB + InEB

IC = IpBC + InBC DpE

IC ≈ IpBC
DnE
IE = IB + IC
IB = IE - IC x
-Xe -LpE DpC Xc
DnC LpC
IB = InEB+ IpEB - IpBC 0 Wb < LnB

Term due to recombination

 Switching cycle - review
Common emitter cicuit iB Switch to ON
IB IB≈Es/RS
iC With IB>ICmax/b

iB RL Over-saturation
-IB
ECC dp
RS
QB DpE
t2
es iE DpE
Es
Qs ts
-Es t DpE
t1 DpC
Load line technique t1 ts t2 -pno 0
t0 x
iC
ECC /RL iC Wb
IC ICmax≈ECC/RL pno << DpE

ECC -vCE
 Switching cycle - review
Common emitter cicuit iB Switch OFF
IB
iC

iB RL
-IB≈-Es/RS
ECC dp
RS
QB DpE
t2
es iE DpE
Es
Qs t’s
-Es t
DpC
t3
Load line technique t2 t’s t3 t4 -pno 0
t4 x
iC tsd
ECC /RL iC Wb
IC IC≈ECC/RL

-vCE
ECC
 Calculating the delays
• Since the currents and minority carrier charge
storage are determined by the pn diodes, the
delays are calculated as in the pn diode.
– Knowledge of current immediately before and after
switch
– Stored minority carrier charge Qp(t) cannot change
immediately → delay.
• The additional parameter is the restriction on the
maximum collector current imposed by the load.
ON switching OFF=0→ON

RL
C
p
e(t) RS vbc ECC
B n
veb
p
t E
iC

dpnB(x) ICsat
E I B C
B QB
IB
IB IBp

IB Qsat

IB

0 WB x tsat t tsat t
t<0 dQB (t ) QB (t )
i (t )   t<tsat
t≥0 veb= 0→ON≈0.7V p QB (t ) I B p    t 
1  exp  
dt iC (t )  
 t  t    p 
E-p B-n
   t  t≥tsat
QB  I B p 1  exp  
   
 p  iC (t ) 
ECC
 I Csat
& RL
x WB
RS +E>>0.7V
QB   e A dn
x 0
pB ( x)dx
E
IB 
RS
 Driving off
Time to turn the BJT OFF is determined by:
1) The degree of over-saturation (BC junction)
2) The off-switching of the emitter-base diode
ib CASE 1: OFF=IB=0 ib CASE 2: OFF=-IB
0N (saturation)→OFF 0N (saturation)→OFF
IB IB

-IB t
t Qb
Qb IB  p
IB  p
Qs
Qs = IC  t -IB p
t
tsd t tsd
iC iC
IC IC

t
t
OFF switching 0N (saturation)→OFF - CASE 1: OFF=IB=0

RL
C
p
e(t) RS vbc ECC
B n
veb
p
t E
iC tsd
dpnB(x) ICsat
E t<0
IB B C
QB
t≥0 IB=0
IBp tsd
tsd Qsat

0 WB x tsd t tsd t
t<0 dQB (t ) QB (t )
i (t )   t<tsd
veb= 0.7V (ON)→0V dt p
 ECC
E-p B-n iC (t )   I Csat
 t  RL
QB (t )  I B p exp  
 
 p t≥tsd
QB (t ) I B p  t 
& iC (t )   exp  
x WB t t  
RS E=0V  p
QB   e A dn pB ( x)dx
x 0
E
IB  0
RS
 0N (saturation)→OFF - CASE 2: OFF=-IB

RL
C
p
e(t) RS vbc ECC
B n
veb
p
t E
iC
tsd
dpnB(x) ICsat
E t<0
IB B C
QB
t≥0 -IB
IBp tsd
tsd Qsat

0 WB x tsd t tsd t
t<0
veb= 0.7V (ON)→-E

E-p B-n dQB (t ) QB (t )

i (t )  
dt p t<tsd
 ECC
iC (t )   I Csat
  t   RL
QB (t )  I B p 2 exp    1
RS -E    
 p  t≥tsd
E QB (t ) I B p   t  
IB  & iC (t )   2 exp    1
RS x WB t  t    p  
QB   e A dn pB ( x)dx
x 0
0N (saturation)→OFF - CASE 1: OFF=IB=0 0N (saturation)→OFF - CASE 1: OFF=-IB

iC
iC tsd t<tsd tsd t<tsd
E
iC (t )  CC  I Csat ECC
ICsat RL ICsat iC (t )   I Csat
RL

t≥tsd t≥tsd
QB (t ) I B p  t 
iC (t )   exp   QB (t ) I B p   t  
t t  
 p
iC (t )   2 exp    1
t  t    p  

tsd t tsd t

STORAGE DELAY TIME: tsd

ECC I B p   t sd  ECC I B p   t  
iC (t sd )  I Csat   exp   iC (t sd )  I Csat   2 exp  sd   1
t    t  
RL  p  RL   p  
 I B p   
t sd   p ln    
I B p
 I Csat t  t sd   p ln  
  1 1 I B p  
 I Csat t    
  2 2 I Csat t  

shorter delay
 Transients
Turn-on: off to saturation
iC
IC IC≈ECC/RL

t
ts
 Time to saturation
QB
ON switching OFF=0→ON
IBp
   t 
RL Qsat QB  I B p 1  exp 
   p 
C  
p
e(t) RS vbc ECC
B n tsat t
veb
p
t E iC
ECC
ICsat iC (t )   I Csat
t≥tsat
RL
t<tsat
QB (t ) I B p    t 
iC (t )   1  exp  
t t    p 

tsat t

I B p    t 
t=tsat iC (t sat )  1  exp sat   I Csat
 t    p 
 
 Transients
Turn-on: off to saturation
iC
IC IC≈ECC/RL

t
ts
ts = p ln(1/( 1 – IC/b IB))
ts small when:
p small
IC small compared to b IB
oversaturation
Transients
Turn-off: saturation to off
Storage delay time: tsd
iC
IC IC ≈ ECC/RL

toff t’s
 Time from saturation

0N (saturation)→OFF - CASE 1: OFF=IB=0

iC tsd t<tsd
E
ICsat iC (t )  CC  I Csat
RL

t≥tsd
QB (t ) I B p  t 
iC (t )   exp  
t t  
 p

tsd t

ECC I B p  t 
iC (t sd )  I Csat   exp  sd 
RL t   
 p 
 I B p 
t sd   p ln  
 I Csat t 
Transients
Turn-off: saturation to off
Storage delay time: tsd
iC
IC IC ≈ ECC/RL

Determined by
toff t’s
EB diode

tsd = p ln(b IB /IC)

tsd small when:
p small
BUT
tsd large when:
IC small compared to b IB
NO oversaturation
 Transients
Turn-off: saturation to off
Turn-on: off to saturation
Storage delay time: tsd
iC iC
IC IC≈ECC/RL IC IC ≈ ECC/RL

t Determined by
ts toff t’s
EB diode
ts = p ln(1/( 1 – IC/b IB))
tsd = p ln(b IB /IC)
ts small when:
tsd small when:
p small
p small
IC small compared to b IB
BUT
oversaturation tsd large when:
IC small compared to b IB
NO oversaturation
 Solution to dilemma
The Schottky diode clamp
C C

B B

E E

B B

metal
C
V
0.3 0.7 pn diode Schottky diode
 Large signal equivalent circuit
• Switching of BJTs
– LARGE SIGNAL
iC

iB RL

RS ECC

es iE

iC

t
Ebers-Moll large signal circuit model
for large signal analysis in SPICE
Not examinable

Is valid for all bias conditions.

The excess at the BC is taken
into account what is essential
for saturation operation and off-
currents.
 Superposition EB & BC influence
Take EB & BC forward biased.

Charge in base:
dp dp dp
DpE DpE
= +
DpC IEN ICN IEI DpC
ICI
Wb x Wb x Wb x
negative
IE = IEN + IEI
Where IEN, ICI are pn diode currents of
IC = ICN + ICI
EB and BC respectively.
 Ebers-Moll equations
IE = IEN + IEI
IC = ICN + ICI
Diode currents

IE = IES (eeVEB/kT –1) – aI ICS (eeVCB/kT –1)

IC = aN IES (eeVEB/kT –1) – ICS (eeVCB/kT –1)
 Ebers-Moll equations
IE = IEN + IEI
IC = ICN + ICI
Collected currents

IEI = aI ICI

ICN = aN IEN a: current transfer factor

IE = IES (eeVEB/kT –1) – aI ICS (eeVCB/kT –1)

IC = aN IES (eeVEB/kT –1) – ICS (eeVCB/kT –1)

 Ebers-Moll equations

IE = IES (eeVEB/kT –1) – aI ICS (eeVCB/kT –1)

IC = aN IES (eeVEB/kT –1) – ICS (eeVCB/kT –1)

Where: aN IES = aI ICS

Or:
IEO

IIEE == aaII IICC + a a

eVEB) I
/kT (e eVEB/kT
+ IEO (eN I ES–1)eV /kT –1)
(1-
IICC == aaNN IIEE -- (1-
ICOa(eNeV
aCB /kT (e CB
I) ICS–1) –1)

ICO

General equivalent circuit based on diode circuit

 Equivalent circuit
IE = aI IC + IEO (eeVEB/kT –1)
IC = aN IE - ICO (eeVCB/kT –1)

E
C
IE IC
IB
B

Valid for all biasing modes

 Description of different transistor regimes
• Cut-off • Active
– VBE<0 & VCB<0 – VBE>0 & VCB<0

E
C E
IE IC C
IB IE IC
IB
B
B
IE = -(1-aN) IES IC = IC0 + aN IE
IC = (1-aI) ICS IC
IE

Small! -VCB
IC0, IE=0
BJT small signal equivalent
circuit
 Now
• Amplification and maximum operation
frequency
– SMALL SIGNAL equivalent circuit

Cj,BC C
B
Cj,BE Cd,BE npn
vbe Rp gmvbe Ro

E
 Definition of circuit elements
• Transconductance
  Vbe  

I C  I 0  exp   

  VT  

I C IC
gm  
Vbe VT
Cj,BC C
B
Cj,BE Cd,BE
Rp gmvbe Ro

E
• Base input resistance
I C  bI B
I C
gm 
Vbe

Vbe b
Rp  
I B gm
Cj,BC C
B
Cj,BE Cd,BE
Rp gmvbe Ro

E
• Base-emitter input capacitances
Cj,BE Depletion capacitance
dQb
Cd , BE  Cd,BE Diffusion capacitance
dVbe
See SG on pn-diode
IE
Cd , BE  B
VT
Cj,BC C
B
Cj,BE Cd,BE
Rp gmvbe Ro

E
• Base-collector capacitance

Cj,BC Depletion capacitance

Miller capacitance: feedback between B & C

Cj,BC C
B
Cj,BE Cd,BE
Rp gmvbe Ro

E
• Output resistance iC

IB
ideal
Vce  Vcb
VA -vCE

Vce VA
R0  
I C IC
Cj,BC C
B
Cj,BE Cd,BE
Rp gmvbe Ro

E
 Current gain - frequency
• Small signal current gain

ic g mvbe b
h fe   
ib ib 1  j C j , BE  Cd , BE Rp
Circuit analysis
ib Max gain
Cj,BC C
B
Cj,BE Cd,BE
vbe Rp gmvbe Ro

E
 Transit frequency fT
• Small signal current gain=1
h fe  1
b 1
fT  
2p C R  total transit time
j , BE  Cd , BE p 2p


C j , BE  Cd , BE Rp

C j , BEVT
 B
b IE
Base transit time

Base-Emitter charging time

 Transit frequency fT
• Base transit time

I C 
Qb
 B   t 
 B

 IC  I p for p+n

Wb2
B  D  D p ( pnp), Dn (npn)
2D

Note: this approach ignores delay caused by BC junction (see 3rd year)
Simplified small signal equivalent circuit
Common-emitter connection
Active mode:
BE: forward, BC: reverse.

ib ic
B C
bib
vbe rbe or rce
gmvbe

E
 Small signal equivalent circuit when
other biasing connection is made
Common-base connection
Active mode:
BE: forward, BC: reverse.

ie ic
E C
i’e

Cdif re ai’e rc
CjE CjC

B
 Conclusion
• Delays in BJTs are a result of the storage of
minority carriers.
• Main delay in common BJTs is due to the
base transit time t.