DC Biasing Circuits

1
 Objectives
• State the purpose of dc biasing circuits.
• Plot the dc load line given the value of VCC and
the total collector-emitter circuit resistance.
• Describe the Q-point of an amplifier.
• Describe and analyze the operations of various
bias circuits:
– base-bias circuits
– voltage-divider bias circuits
– emitter-bias circuits
– collector-feedback bias circuits
– emitter-feedback bias circuits

2
Fig 7.1 Typical amplifier operation.

VCC
VB(ac)

IB(ac) RC
RB

Q1

VCE(ac)

IC(ac)

3
Fig 7.2 A generic dc load line.
IC VCC  VCE
IC 
RC
VCC
I C (sat) 
RC

VCE (off )  VCC

VCE

4
 Fig 7.3 Example 7.1.
Plot the dc load line for the circuit
shown in Fig. 7.3a.
+12 V
IC

RC
2 k
8 IC(sat)
RB
6

Q1 4
VCE(off)
2

VCE
2 4 6 8 10 12

5
 Fig 7.4 Example 7.2.
Plot the dc load line for the circuit shown in
Fig. 7.4. Then, find the values of VCE for IC =
1, 2, 5 mA respectively.
+10 V
IC

VCE  VCC  I C RC
RC
1 k
10 IC (mA) VCE (V)
RB
8 1 9
6 2 8
Q1
4 5 5
2

VCE
2 4 6 8 10
6
Fig 7.6-8 Optimum Q-point with
amplifier operation.
IC
IC(sat)
IB = 50 A IB
I C  βI B
IB = 40 A

IC(sat)/2 Q-Point IB = 30 A

IB = 20 A
IB = 10 A
IB = 0 A
VCE
VCC/2 VCC

VCE  VCC  I C RC
7
 Fig 7.9 Base bias (fixed bias).
VCC
VCC  VBE
IB 
RB

IC
RC
I C  βI B
RB
Output
IB
VCE  VCC  I C RC
Input Q1
b = dc current gain = hFE
+0.7 V
IE
VBE

8
Fig 7.10 Example 7.3.
+8 V VCC  0.7V 8V  0.7V
IB  
RB 360kΩ
 20.28μA
RC
IC 2 k I C  hFE I B  100  20.28μA 
RB  2.028mA
360 k

IB VCE  VCC  I C RC
hFE = 100  8V   2.028mA  2kΩ 
 3.94V
+0.7 V
IE
The circuit is midpoint biased.
VBE
9
 Fig 7.11 Example 7.4.
Construct the dc load line for the circuit shown in Fig. 7.10,
and plot the Q-point from the values obtained in Example
7.3. Determine whether the circuit is midpoint biased.

IC (mA)
VCC 8V
I C (sat )    4mA
RC 2kΩ
4

3 VCE off   VCC  8V

2 Q

VCE (V)
2 4 6 8 10 10
Fig 7.12 Example 7.6. (Q-point shift.)
The transistor in Fig. 7.12 has values of hFE = 100 when T =
25 °C and hFE = 150 when T = 100 °C. Determine the Q-
point values of IC and VCE at both of these temperatures.

+8 V

Temp(°C) IB (A) IC (mA) VCE (V)

RC 25 20.28 2.028 3.94
I 2 k 100 20.28 3.04 1.92
RB C
360 k

IB
hFE = 100 (T = 25C)
hFE = 150 (T = 100C)

+0.7 V
IE
VBE
11
 Fig 7.13 Base bias characteristics. (1)
VCC
Circuit recognition: A single resistor
(RB) between the base terminal and
VCC. No emitter resistor.
RC
IC
RB
Output
IB
Input Q1 Advantage: Circuit simplicity.
Disadvantage: Q-point shift with temp.
+0.7 V
IE Applications: Switching circuits only.
VBE

12
 Fig 7.13 Base bias characteristics. (2)
VCC
Load line equations:
VCC
I C (sat ) 
RC RC
IC
RB VCE (off )  VCC
Output
IB
Input Q1
Q-point equations:
VCC  VBE
+0.7 V
IE IB 
VBE RB
I C  hFE I B
VCE  VCC  I C RC
13
 Fig 7.14 Voltage divider bias. (1)
+VCC
Assume that I2 > 10IB.
R2
VB  VCC
R1  R2
IC RC
I1 R1 VE  VB  0.7V
VE
IB
Output IE 
RE
Input Assume that ICQ  IE (or
I2 R2 hFE >> 1). Then
IE RE
VCEQ  VCC  ICQ  RC  RE 

14
 Fig 7.15 Example 7.7. (1)
Determine the values of ICQ and VCEQ for the circuit shown in Fig. 7.15.
+10 V R2
VB  VCC
R1  R2
4.7kΩ
 10V   2.07V
22.7kΩ
RC
R1
IC
3 k VE  VB  0.7V
I1
18 k  2.07V  0.7V  1.37V
IB Because ICQ  IE (or hFE >> 1),
hFE = 50 VE 1.37V
I CQ    1.25mA
RE 1.1kΩ
R2
I2
4.7 k
RE VCEQ  VCC  I CQ  RC  RE 
1.1 k
IE  10V  1.25mA  4.1kΩ   4.87V
15
 Fig 7.15 Example 7.7. (2)
Verify that I2 > 10 IB.
+10 V
VB 2.07V
I2    440.4μA
R2 4.7kΩ
IE 1.25mA
RC IB  
R1
IC
3 k hFE  1 50+1
I1
18 k  24.51μA

IB  I 2  10 I B
hFE = 50

R2
I2 RE
4.7 k
1.1 k
IE

16
Which value of hFE do I use?
Transistor specification sheet may list any
combination of the following hFE: max. hFE,
min. hFE, or typ. hFE. Use typical value if
there is one. Otherwise, use

hFE (ave)  hFE (min)  hFE (max)

17
 Example 7.9
A voltage-divider bias circuit has the following values:
R1 = 1.5 k, R2 = 680 , RC = 260 , RE = 240  and
VCC = 10 V. Assuming the transistor is a 2N3904,
determine the value of IB for the circuit.

R2 680Ω
VB  VCC  10V   3.12V
R1  R2 2180Ω
VE  VB  0.7V  3.12V  0.7V  2.42V
VE 2.42V
I CQ  IE    10mA
RE 240Ω
hFE ( ave )  hFE (min)  hFE (max)  100  300  173

IE 10mA
IB    57.5μA
hFE (ave)  1 174
18
Stability of Voltage Divider
Bias Circuit
The Q-point of voltage divider bias circuit is less
dependent on hFE than that of the base bias (fixed
bias).

For example, if IE is exactly 10 mA, the range of hFE is

100 to 300. Then

IE 10mA
At hFE  100, I B    100μA and I CQ  I E  I B  9.90mA
hFE  1 101
IE 10mA
At hFE  300, I B    33μA and I CQ  I E  I B  9.97mA
hFE  1 301

ICQ hardly changes over the entire range of hFE.

19
Fig 7.18 Load line for voltage
divider bias circuit.
IC (mA)

VCC 10V
25 I C (sat )    20mA
RC  RE 260Ω+240Ω
20
Circuit values are from
15
Example 7.9.
10
VCE (off )  VCC  10V
5

VCE (V)
2 4 6 8 10 12 20
 Fig 7.19-20 Base input resistance. (1)

VCC VCC VE  I E RE  I B (hFE  1) RE

VE
RIN (base)   (hFE  1) RE
IB
I1 R1
IC RC
I1 R1
 hFE RE
0.7 V
IB
May be ignored.

I2 R2 I2 R2 IB RIN(base)
RE
IE
RIN(base)
21
 Fig 7.19-20 Base input resistance. (2)

VCC R2 // RIN (base)

VB  VCC
R1  R2 // RIN (base)
R2 //  hFE RE 
I1 R1  VCC
R1  R2 //  hFE RE 
IB
VB
REQ
 VCC
R1  REQ REQ  R2 //  hFE RE 
I2 R2 IB RIN(base)

22
 Fig 7.21 Example 7.11.
REQ  R2 //  hFE RE 
VCC=20V
 10kΩ//  50 1.1kΩ   8.46kΩ
REQ
VB  VCC
RC R1  REQ
IC
R1 6.2k 8.46kΩ
  20V 
I1
68k  2.21V
68kΩ  8.46kΩ
VE VB  0.7V
hFE = 50
I CQ  I E  
RE RE
IE 2.21V  0.7V
I2
R2
RE   1.37mA
10k 1.1kΩ
1.1k
VCEQ  VCC  I CQ  RC  RE 
 20V  1.37mA  7.3kΩ   9.99V
23
 Fig 7.24 Voltage-divider bias
characteristics. (1)
+VCC
Circuit recognition: The
voltage divider in the base
circuit.

IC RC Advantages: The circuit Q-

I1 R1 point values are stable
against changes in hFE.
IB
Output Disadvantages: Requires
more components than most
Input other biasing circuits.
I2 R2 Applications: Used primarily
IE RE
to bias linear amplifier.

24
 Fig 7.24 Voltage-divider bias
characteristics. (2)
+VCC VCC
Load line I 
equations: C (sat ) RC  RE
VCE (off )  VCC

IC RC
I1 R1 Q-point equations (assume
that hFERE > 10R2):
IB R2
Output VB  VCC
R1  R2
Input VE  VB  0.7V
I2 R2 VE
IE RE I CQ  I E 
RE
VCEQ  VCC  I CQ  RC  RE 
25
 Other Transistor Biasing
Circuits
• Emitter-bias circuits
• Feedback-bias circuits
– Collector-feedback bias
– Emitter-feedback bias

26
 Fig 7.25-6 Emitter bias.
+VCC
Assume that the transistor
operation is in active region.
VEE  0.7V
IC RC IB 
RB   hFE  1 RE

IB IC  hFE I B
Output
Q1 I E   hFE  1 I B
Input
RB
VCE  VCC  IC RC  I E RE  VEE
RE
IE
Assume that hFE >> 1.
VCE  VCC  IC  RC  RE   VEE
-VEE 27
28
29
30
31
 Fig 7.27 Example 7.12.
+12 V
Determine the 12V  0.7V
IB 
values of ICQ and RB  (hFE  1) RE
VCEQ for the 11.3V
RC   37.47μA
amplifier shown in IC
Fig.7.27.
750 100Ω+2011.5kΩ
I CQ  hFE I B  200  37.47μA
IB  7.49mA
Q1 Output
hFE = 200 VCEQ  VCC  IC  RC  RE   (VEE )
Input
RB
 24V  7.49mA  750Ω  1.5kΩ 
100 RE  7.14V
IE 1.5k

-12 V
32
 Load Line for
Emitter-Bias Circuit
IC
VCC  (VEE ) VCC  VEE
I C (sat )  
RC  RE RC  RE
IC(sat)
VCE (off )  VCC   VEE   VCC  VEE

VCE(off)

VCE
33
 Fig 7.28 Emitter-bias
characteristics.
+V
(1)
CC
Circuit recognition: A split (dual-
polairty) power supply and the base
resistor is connected to ground.
IC RC
Advantage: The circuit Q-point
values are stable against changes in
hFE.
IB
Output Disadvantage: Requires the use of
Q1
dual-polarity power supply.
Input
Applications: Used primarily to bias
RB linear amplifiers.
RE
IE

-VEE 34
 Fig 7.28 Emitter-bias
characteristics.
+V
(2)
CC
Load line equations:
VCC  VEE
I C (sat ) 
IC RC RC  RE
VCE (off )  VCC  VEE
IB
Output Q-point equations:
Q1
VBE  VEE
Input I CQ   hFE 
RB
RB   hFE  1 RE
IE
RE
VCEQ  VCC  I CQ  RC  RE   VEE

-VEE 35
Fig 7.29 Collector-feedback
bias.
+VCC VCC   IC  I B  RC  I B RB  VBE
VCC  VBE
IB 
(hFE  1) RC  RB
RC
I CQ  hFE I B
RB
VCEQ  VCC   hFE  1 I B RC
IC
IB
 VCC  I CQ RC

IE

36
In this case collector voltage provides the bias for the base-
emitter junction. The negative feedback creates an “offsetting”
effect that tends to keep the Q-point stable. If IC tries to
increase, it drops more voltage across RC, thereby causing VC
to decrease. When VC decreases, there is a decrease in
voltage cross RB, which decreases IB. The decrease in IB
produces less IC which drops less voltage across RC and thus
offsets the decrease in VC.

37
 Fig 7.30 Example 7.14.
+10 V Determine the values of ICQ and VCEQ for the
amplifier shown in Fig. 7.30.
VCC  VBE
IB 
RC RB   hFE  1 RC
1.5 k
10V  0.7V
RB   28.05μA
180kΩ  1011.5kΩ
180 k I CQ  hFE I B  100  28.05μA

hFE = 100  2.805mA

VCEQ  VCC  (hFE  1) I B RC
 10V  101 28.05μA 1.5kΩ
 5.75V 38
 Circuit Stability of
Collector-Feedback Bias
+VCC hFE increases

IC increases (if IB is the same)

RC
RB VCE decreases

IC
IB
IB decreases

IE
IC does not increase that much.
Good Stability. Less dependent
on hFE and temperature.
39
Collector-Feedback
Characteristics (1)
+VCC
Circuit recognition: The base
resistor is connected between
the base and the collector
RC terminals of the transistor.
RB Advantage: A simple circuit
with relatively stable Q-point.
IC Disadvantage: Relatively poor
IB
ac characteristics.
Applications: Used primarily to
IE
bias linear amplifiers.

40
Collector-Feedback
Characteristics (2)
+VCC Q-point relationships:

VCC  VBE
IB 
(hFE  1) RC  RB
RC
I CQ  hFE I B
RB
VCEQ  VCC  I CQ RC
IC
IB

IE

41
Fig 7.31 Emitter-feedback bias.
+VCC VCC  VBE
IB 
RB   hFE  1 RE

I CQ  hFE I B
RB RC
IC

IB
I E   hFE  1 I B

VCEQ  VCC  I C RC  I E RE
 VCC  I CQ  RC  RE 
IE RE

42
Fig 7.32 Example 7.15.
+VCC
VCC  VBE 16V  0.7V
IB  
RB   hFE  1 RE 680kΩ  511.6kΩ
 20.09μA
RB RC I CQ  hFE I B  50  20.09μA  1mA
680k 6.2k
VCEQ  VCC  I CQ  RC  RE 
 16V  1mA  7.8kΩ   8.2V
hFE = 50

RE
1.6k

43
 Circuit Stability of
Emitter-Feedback Bias
+VCC hFE increases

IC increases (if IB is the same)

RB RC
IC VE increases

IB
IB decreases

IE RE
IC does not increase that much.
IC is less dependent on hFE and
temperature.
44
Emitter-Feedback
Characteristics (1)
+VCC
Circuit recognition: Similar to
voltage divider bias with R2
missing (or base bias with RE
added).
RB RC
IC
Advantage: A simple circuit
with relatively stable Q-point.
IB
Disadvantage: Requires more
components than collector-
feedback bias.
IE RE Applications: Used primarily to
bias linear amplifiers.

45
Emitter-Feedback
Characteristics (2)
+VCC
Q-point relationships:

VCC  VBE
IB 
RB  (hFE  1) RE
RB
IC
RC
I CQ  hFE I B

IB
VCEQ  VCC  ICQ  RC  RE 

IE RE

46
 Summary
• DC Biasing and the dc load line
• Base bias circuits
• Voltage-divider bias circuits
• Emitter-bias circuits
• Feedback-bias circuits
– Collector-feedback bias circuits
– Emitter-feedback bias circuits

47