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    EE518 - Epitaxial Dep.S07

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    Vandana Thakur
    This document discusses epitaxial deposition, which is the controlled growth of a crystalline layer on a crystalline substrate. It matches the crystal structure of the substrate. Various methods are used, including vapor phase epitaxy where reactants are introduced as gases. Precise control allows for high quality layers with abrupt interfaces and uniform doping. Applications include engineered wafers, CMOS structures, bipolar transistors, and III-V semiconductor devices that require high quality interfaces. Epitaxial layers are important for producing the highest quality semiconductor wafers and devices.

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    EE518 - Epitaxial Dep.S07

    Uploaded by

    Vandana Thakur
    55 views19 pages
    This document discusses epitaxial deposition, which is the controlled growth of a crystalline layer on a crystalline substrate. It matches the crystal structure of the substrate. Various methods are used, including vapor phase epitaxy where reactants are introduced as gases. Precise control allows for high quality layers with abrupt interfaces and uniform doping. Applications include engineered wafers, CMOS structures, bipolar transistors, and III-V semiconductor devices that require high quality interfaces. Epitaxial layers are important for producing the highest quality semiconductor wafers and devices.

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    This document discusses epitaxial deposition, which is the controlled growth of a crystalline layer on a crystalline substrate. It matches the crystal structure of the substrate. Various methods are used, including vapor phase epitaxy where reactants are introduced as gases. Precise control allows for high quality layers with abrupt interfaces and uniform doping. Applications include engineered wafers, CMOS structures, bipolar transistors, and III-V semiconductor devices that require high quality interfaces. Epitaxial layers are important for producing the highest quality semiconductor wafers and devices.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    55 views19 pages

    EE518 - Epitaxial Dep.S07

    Uploaded by

    Vandana Thakur
    This document discusses epitaxial deposition, which is the controlled growth of a crystalline layer on a crystalline substrate. It matches the crystal structure of the substrate. Various methods are used, including vapor phase epitaxy where reactants are introduced as gases. Precise control allows for high quality layers with abrupt interfaces and uniform doping. Applications include engineered wafers, CMOS structures, bipolar transistors, and III-V semiconductor devices that require high quality interfaces. Epitaxial layers are important for producing the highest quality semiconductor wafers and devices.

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    © All Rights Reserved
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    Download as ppt, pdf, or txt
    of 19

    Epitaxial Deposition

    Daniel Lentz

    EE 518
    Penn State University
    March 29, 2007
    Instructor: Dr. J. Ruzyllo
    Outline
     Introduction
     Mechanism of epitaxial growth

     Methods of epitaxial deposition

     Properties of epitaxial layers

     Applications of epitaxial layers


    Epitaxial Growth
     Deposition of a layer on
    a substrate which Ordered,
    crystalline
    matches the crystalline growth;
    order of the substrate NOT
    epitaxial
     Homoepitaxy
     Growth of a layer of the
    same material as the
    substrate
    Epitaxial
     Si on Si growth:
     Heteroepitaxy
     Growth of a layer of a
    different material than
    the substrate
     GaAs on Si
    Motivation
     Epitaxial growth is useful for applications that place
    stringent demands on a deposited layer:
     High purity
     Low defect density
     Abrupt interfaces
     Controlled doping profiles
     High repeatability and uniformity
     Safe, efficient operation
     Can create clean, fresh surface for device
    fabrication
    General Epitaxial Deposition
    Requirements
     Surface preparation
     Clean surface needed
     Defects of surface duplicated in epitaxial layer
     Hydrogen passivation of surface with water/HF
     Surface mobility
     High temperature required heated substrate
     Epitaxial temperature exists, above which deposition is
    ordered
     Species need to be able to move into correct
    crystallographic location
     Relatively slow growth rates result
     Ex. ~0.4 to 4 nm/min., SiGe on Si
    General Scheme

    Modified from http://www.acsu.buffalo.edu/~tjm/MOVPE-GaN-schematic.jpg


    Thermodynamics
     Specific thermodynamics varies by process
     Chemical potentials
     Driving force
     High temperature process is mass transport controlled, not very
    sensitive to temperature changes
     Steady state
     Close enough to equilibrium that chemical forces that drive growth
    are minimized to avoid creation of defects and allow for correct
    ordering
     Sufficient energy and time for adsorbed species to reach their lowest
    energy state, duplicating the crystal lattice structure
     Thermodynamic calculations allow the determination of solid
    composition based on growth temperature and source composition
    Kinetics
     Growth rate controlled by kinetic
    considerations
     Mass transport of reactants to surface
     Reactions in liquid or gas
     Reactions at surface
     Physical processes on surface
     Nature and motion of step growth
     Controlling factor in ordering
     Specific reactions depend greatly on method
    employed
    Kinetics Example
     Atoms can bond to flat surface,
    steps, or kinks.
     On surface requires some critical
    radius
     Easier at steps
     Easiest at kinks
     As-rich GaAs surface
     As only forms two bonds to
    underlying Ga
     Very high energy
     Reconstructs by forming As dimers
     Lowers energy
     Causes kinks and steps on surface
     Results in motion of steps on
    surface
     If start with flat surface, create step
    once first group has bonded
     Growth continues in same way

    http://www.bnl.gov/nsls2/sciOps/chemSci/growth.asp
    Vapor Phase Epitaxy
     Specific form of chemical vapor deposition (CVD)
     Reactants introduced as gases
     Material to be deposited bound to ligands
     Ligands dissociate, allowing desired chemistry to
    reach surface
     Some desorption, but most adsorbed atoms find
    proper crystallographic position
     Example: Deposition of silicon
     SiCl4 introduced with hydrogen
     Forms silicon and HCl gas
     Alternatively, SiHCl3, SiH2Cl2
     SiH4 breaks via thermal decomposition
    Precursors for VPE
     Must be sufficiently volatile to allow
    acceptable growth rates
     Heating to desired T must result in pyrolysis
     Less hazardous chemicals preferable
     Arsine highly toxic; use t-butyl arsine instead
     VPE techniques distinguished by precursors
    used
    Varieties of VPE
     Chloride VPE
     Chlorides of group III and V elements
     Hydride VPE
     Chlorides of group III element
     Group III hydrides desirable, but too unstable
     Hydrides of group V element
     Organometallic VPE
     Organometallic group III compound
     Hydride or organometallic of group V element
     Not quite that simple
     Combinations of ligands in order to optimize
    deposition or improve compound stability
     Ex. trimethylaminealane gives less carbon
    contamination than trimethylalluminum

    http://upload.wikimedia.org/wikipedia/en/thumb/e/e5/Trimethylaluminum.png/100px-Trimethylaluminum.png,
    http://pubs.acs.org/cgi-bin/abstract.cgi/jpchax/1995/99/i01/f-pdf/f_j100001a033.pdf?sessid=6006l3
    Other Methods
     Liquid Phase Epitaxy  Fast, inexpensive
     Reactants are dissolved in  Not ideal for large area
    a molten solvent at high layers or abrupt interfaces
    temperature  Thermodynamic driving
     Substrate dipped into force relatively very low
    solution while the  Molecular Beam Epitaxy
    temperature is held
     Very promising technique
    constant
     Elemental vapor phase
     Example: SiGe on Si
    method
     Bismuth used as solvent
     Beams created by
     Temperature held at
    evaporating solid source in
    800°C
    UHV
     High quality layer
    Doping of Epitaxial Layers
     Incorporate dopants during deposition
     Theoretically abrupt dopant distribution
     Add impurities to gas during deposition
     Arsine, phosphine, and diborane common
     Low thermal budget results
     High T treatment results in diffusion of dopant into
    substrate
     Reason abrupt distribution not perfect
    Properties of Epitaxial Layer
     Crystallographic structure of film reproduces that of
    substrate
     Substrate defects reproduced in epi layer
     Electrical parameters of epi layer independent of
    substrate
     Dopant concentration of substrate cannot be reduced
     Epitaxial layer with less dopant can be deposited
     Epitaxial layer can be chemically purer than
    substrate
     Abrupt interfaces with appropriate methods
    Applications
     Engineered wafers
     Clean, flat layer on top of
    less ideal Si substrate
     On top of SOI structures
     Ex.: Silicon on sapphire
     Higher purity layer on lower
    quality substrate (SiC)
     In CMOS structures
     Layers of different doping
     Ex. p- layer on top of p+
    substrate to avoid latch-up
    More applications
     Bipolar Transistor
     Needed to produce
    buried layer
    http://www.search.com/reference/Bipolar_junction_transistor
     III-V Devices
     Interface quality key
     Heterojunction Bipolar
    Transistor
     LED
     Laser
    http://www.veeco.com/library/elements/images/hbt.jpg
    Summary
     Deposition continues crystal structure
     Creates clean, abrupt interfaces and high
    quality surfaces
     High temperature, clean surface required
     Vapor phase epitaxy a major method of
    deposition
     Epitaxial layers used in highest quality wafers
     Very important in III-V semiconductor
    production
    References
     P. O. Hansson, J. H. Werner, L. Tapfer, L. P. Tilly, and E. Bauser, Journal of Applied
    Physics, 68 (5), 2158-2163 (1990).
     G. B. Stringfellow, Journal of Crystal Growth, 115, 1-11 (1991).
     S. M. Gates, Journal of Physical Chemistry, 96, 10439-10443 (1992).
     C. Chatillon and J. Emery, Journal of Crystal Growth, 129, 312-320 (1993).
     M. A. Herman, Thin Solid Films, 267, 1-14 (1995).
     D. L. Harame et al, IEEE Transactions on Electron Devices, 42 (3), 455-468 (1995).
     G. H. Gilmer, H. Huang, and C. Roland, Computational Materials Science, 12, 354-380
    (1998).
     B. Ferrand, B. Chambaz, and M. Couchaud, Optical Materials, 11, 101-114 (1999).
     R. C. Cammarata, K. Sieradzki, and F. Spaepen, Journal of Applied Physics, 87 (3),
    1227-1234 (2000).
     R. C. Jaeger, Introduction to Microelectronic Fabrication, 141-148 (2002).
     R. C. Cammarata and K. Sieradzki, Journal of Applied Mechanics, 69, 415-418 (2002).
     A. N. Larsen, Materials Science in Semiconductor Processing, 9, 454-459 (2006).

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