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Processing BJT

The document outlines the process steps for fabricating a bipolar junction transistor (BJT). It involves 1) implanting a buried n+ layer, 2) growing an epitaxial layer, 3) diffusing p+ isolation regions, 4) diffusing the p-type base region, 5) diffusing the n-type emitter region, 6) depositing p+ ohmic contacts, 7) etching contact holes, 8) depositing metal contacts, and 9) adding passivation and bond pads. The process creates the layered n+/p-base/n+ structure necessary for a BJT.

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Snigdha Borah
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285 views14 pages

Processing BJT

The document outlines the process steps for fabricating a bipolar junction transistor (BJT). It involves 1) implanting a buried n+ layer, 2) growing an epitaxial layer, 3) diffusing p+ isolation regions, 4) diffusing the p-type base region, 5) diffusing the n-type emitter region, 6) depositing p+ ohmic contacts, 7) etching contact holes, 8) depositing metal contacts, and 9) adding passivation and bond pads. The process creates the layered n+/p-base/n+ structure necessary for a BJT.

Uploaded by

Snigdha Borah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion
n+ layer p+ layer n+ layer
4. Base p-type diffusion p-base layer

5. Emitter n+ diffusion n+ buried layer

6. p+ ohmic contact
p-substrate
7. Contact etching

8. Metal deposition and etching

9. Passivation and bond pad opening


BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

7. Contact etching

8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact
n epi layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion p+ isolation layer

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion p+ isolation layer

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion p+ isolation layer

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate


Doping Profiles in a BJT
Substrate PNP BJT
Lateral PNP BJT
Modifications to a BJT Process
Dielectric isolation --- substrate isolation

Superbeta transistors

Double diffusion --- make acceptable JFETs

Ion implanted JFETs --- make good JFETs

Double diffused pnp BJTs --- make good pnp devices

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