Ferroelectric Ram

FERROELECTRIC RAM
[FRAM]
Presented by
Javad.P
N0:30
FEATURES OF FRAM
1.FRAM allows systems to retain information even when power is lost i.e.; non-volatile.
2.The number of write cycles supported by the FRAM components is
nearly unlimited—up to 10 billion read/writes.
3.Low power requirements.
4.When an electric field is applied to a ferroelectric crystal,
the central atom moves in the direction of the field.
5.As the atom moves within the crystal, it passes through an energy barrier, causing a
charge spike.
6.Internal circuits sense the charge spike and set the memory
If the electric field is removed from the crystal, the central atom stays in position,
preserving the state of the memory. This
makes FRAM non-volatile, without any periodic refresh.
7.Once a cell is accessed for a read operation, its data are presented in the form of an
anal
Signal to sense amplifier, where they are compared against a reference voltage to find
the logic level.
BASIC MEMORY CELL STRUCTURE
Bitline(BL)
word line (WL)
Plateline(PL)
A ferroelectric memory cell, known as IT- IC (one transistor, one
capacitor) structure which is similar to that of DRAM.
 The difference is that ferroelectric film is used as its storage

capacitor rather than paraelectric material as in DRAM.
Figure above shows memory cell structure, consists of a single

ferroelectric capacitor that is connected to a Plateline(PL) at one
end and, via an access transistor, to a Bitline(BL) at the other end.
Raising the wordline (WL) and hence turning ON the access
transistor accesses the cell.
FERRO ELECTRIC
CRYSTAL
Ferroelectric CrystaI: The center atom moves to store ones and zeros
Consist of 8 atom of lead at corners

6 atom of oxygen at face centers
1 atom of titanium at cube centers
FRAM TECHONOLOGY
• When an electric field is applied to a ferroelectric crystal, the

central atom moves in the direction of the field.
•As the atom moves within the crystal, it passes through an energy
barrier,causing a charge spike.
•Internal circuits sense the charge spike and set the memory. If the
electric field is removed from the crystal, the central atom stays in
position, preserving the state of the memory.
•This makes FRAM non-volatile, without any periodic refresh
FRAM READ OPERATION
• An electric field is applied.
• If the atoms are near the cube "floors" and the

electric field pushes them to the top, the cell
gives off a current pulse.
• This pulse, representing a stored 1 or 0, is

detected by a sense amplifier. If the atoms are
already near their cubes' "ceilings," they don't
budge when the field is applied and the cell
gives off a smaller pulse.
• Reading an FRAM cell destroys the data stored

in its capacitor. So after the bit is read, the sense
amplifier writes the data back into the cell, just
as in a DRAM.
FRAM WRITE OPERATION
To write a "1" into the memory cell,
 the BL is raised to Vdd-

 Then the WL is raised to Vdd + Vt.
 This allows a full Vdd to appear across the ferroelectric capacitor
 At this time the state of ferroelectric is independent of its initial state.
 Next, the PL is pulsed, WL stays activated until
the PL is pulled down completely and the BL is driven back to zero.
 The final state of the capacitor is a negative charge state S1.
To write a "0" into the cell
the BL is driven to 0V prior to activating the

WL.
 The rest of the operation is similar to that of
writing a "1“
The written data is held in the cell even though

the selection of the wordline is changed to non
selected state (i.e. transistor is OFF), so it is
nonvolatile.
FRAM AS RAM AND ROM
FRAM memory fills the RAM and ROM performance gap
• The key advantage to FRAM over DRAM is what happens between the read and
write cycles. In DRAM, every cell must be periodically read and then re-written, a
process known as refresh..
•In contrast, FRAM only requires power when actually reading or writing a cell. The
vast majority of power used in DRAM is used for refresh power usage about 99%
lower than DRAM.
RAMTRON-FRAM
COMPARISON
FRAM EEPROM Flash DRAM SRAM
Memory
Memory Type Non- Non- Non-volatile Volatile Volatile

volatile volatile
Read Cycle 100ns 200ns 120ns 70ns 85 ns .
Write Cycle 100ns 10ns 100ns 70ns 85ns
Power 1nJ lnJ 2nJ 4nJ 3nJ.
Consumption
Current to Unnecess Unnecess Unnecessary' Necessar Necessar
retain Data ary ary y y
Internal Write 2V-5V 14V 9V 3.3V 3.3V
Voltage
Cell Structure 1T-1C • 2T IT 1T-1C 6T,4T+R
Area/Cell 4 3 1 2 4 -
ADVANTAGES
*FRAM allows systems to retain information even when power

is lost, without resorting to batteries, EEPROM, or flash.
*Access times are the same as for standard SRAM, so there's

no delay-at-write access as there is for EEPROM or flash.
*Low power consumption, low voltage operation and high

write endurance make it superior than other non-volatile
memories like EEPROM & FLASH.
*It is less expensive than magnetic memories.

DISADVANTAGES
Present high cost.
Low density compared to DRAM & SRAM.
FUTURE OF FRAM
Increased memory capacity
High density, to operate under very high temperatures.
Combine FRAM with other logic technologies to offer more enhanced devices.
APPLICATIONS
Personal digital assistants (PDAs), handheld phones, power meters, and smart card, and
in security systems
SMART CARDS USING FRAM
•Dial a connection on a mobile telephone and be charged on a per-call basis

•Establish your identity when logging on to an Internet access provider or to an online bank
•Pay for parking at parking meters or to get on subways, trains, or buses
•Give hospitals or doctors personal data without filling out a form
•Make small purchases at electronic stores on the Web (a kind of cybercash)
•Buy gasoline at a gasoline station
CONCLUSION
 Ferroelectric memories are superior to EPROM’s & Flash memories
in terms of write access time & overall power consumption.Two eg: of
such applications are contactless smart cards & digital cameras.
Future personal wireless connectivity applications that are battery
driven will demand large amounts of non volatile storage to retain
accessed internet webpages, contain compressed video, voice and
data. The density and energy efficiency of writing data to memory
would seem to indicate that ferroelectric memory will play a major role
in these types of consumer products.

Ferroelectric Ram

Uploaded by

Copyright:

Available Formats

Ferroelectric Ram

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Ferroelectric Ram

Uploaded by

Copyright:

Available Formats

FERROELECTRIC RAM

word line (WL)

 The difference is that ferroelectric film is used as its storage

Figure above shows memory cell structure, consists of a single

Consist of 8 atom of lead at corners

• When an electric field is applied to a ferroelectric crystal, the

• An electric field is applied.

• If the atoms are near the cube "floors" and the

• This pulse, representing a stored 1 or 0, is

• Reading an FRAM cell destroys the data stored

To write a "1" into the memory cell,

 the BL is raised to Vdd-

the BL is driven to 0V prior to activating the

The written data is held in the cell even though

FRAM memory fills the RAM and ROM performance gap

Memory Type Non- Non- Non-volatile Volatile Volatile

*FRAM allows systems to retain information even when power

*Access times are the same as for standard SRAM, so there's

*Low power consumption, low voltage operation and high

*It is less expensive than magnetic memories.

SMART CARDS USING FRAM

•Dial a connection on a mobile telephone and be charged on a per-call basis

You might also like