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Confined Carriers: Dragica Vasileska

This document discusses quantum confined structures and carriers. It begins by introducing nanoelectronics and quantum confined structures, then discusses quantum wells in more detail. Quantum wells provide confinement in one dimension, creating a quasi-two-dimensional electron gas. Rectangular heterostructures can be used to create quantum wells with discrete energy levels. Transport and properties depend on dimensional scales relative to the phase coherence length and mean free path. Quantum confinement leads to quantization of energy levels and new quantum phenomena at the nanoscale.

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56 views20 pages

Confined Carriers: Dragica Vasileska

This document discusses quantum confined structures and carriers. It begins by introducing nanoelectronics and quantum confined structures, then discusses quantum wells in more detail. Quantum wells provide confinement in one dimension, creating a quasi-two-dimensional electron gas. Rectangular heterostructures can be used to create quantum wells with discrete energy levels. Transport and properties depend on dimensional scales relative to the phase coherence length and mean free path. Quantum confinement leads to quantization of energy levels and new quantum phenomena at the nanoscale.

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samactrang
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Confined Carriers

DRAGICA VASILESKA
PROFESSOR
ARIZONA STATE UNIVERSITY
Outline

 Nanoelectronics

 Quantum Confined Structures: General


Considerations

 Quantum Wells
 Triangular:Si/SiO2 Interface
 Rectangular: Heterostructures
Nanotechnology/Nanoelectronics
• Nanotechnology is the design and construction of
useful technological devices whose size is a few billionths
of a meter
• Nanoscale devices will be built of small assemblies of
atoms linked together by bonds to form macro-molecules
and nanostructures
• Nanoelectronics encompasses nanoscale circuits
and devices including (but not limited to) ultra-scaled
FETs, quantum SETs, RTDs, spin devices, superlattice
arrays, quantum coherent devices, molecular electronic
devices, and carbon nanotubes.
Motivation for Nanoelectronics
Limits of Conventional CMOS technology
• Device physics scaling
• Interconnects
Nanoelectronic alternatives?
• Negative resistance devices, switches (RTDs,
molecular), spin transistors
• Single electron transistor (SET) devices and circuits
• Quantum cellular automata (QCA)
New information processing paradigms
• Quantum computing, quantum info processing (QIP)
• Sensing and biological interface
• Self assembly and biomimetic behavior
Issues
• Predicted performance improves with decreased
dimensions, BUT
• Smaller dimensions-increased sensitivity to fluctuations
• Manufacturability and reproducibility
• Limited demonstration system demonstration
Transport Regimes

‘Classical’

Transport regime
depends on length
scale:
l-Phase coherence
length
lin-Inelastic mean free
path
le-Elastic mean free
path
‘Quantum’
P
Diffusive Transport L>>l

Energy dissipation
in active region

P
Energy dissipation Phase Coherent
in contact Transport L<<l
New Phenomena at the Nanoscale
Quantum Confinement- small dimensions lead to quantum
confinement and associated quantization of motion leading to
discrete energy levels
Quantum Interference- at dimensions smaller than the phase
coherence length, the wave-like behavior of particles manifests
itself, leading to reflection, refraction, tunneling, and other non-
classical wave-like behavior
Phase Coherent Transport- at dimensions smaller than the mean
free path for scattering, transport is ballistic rather than diffusive
Single Electron Effects- for small structures, the discrete nature of
charge itself is important, and the associate energy for transfer of
charge is non-negligible compared to the total energy of the system
Spin Dependent Transport- Due to effects of quantum confinement,
spin dependent phenomena may be enhanced.
Quantum Confined Structures:
General Consideration
Confinement in one dimension: Quantum
Well, Quasi-two-dimensional electron gas
(2DEG)

Confinement in two dimensions: Quantum


wire, quasi-one-dimensional system
(1DEG)

Confinement in all three directions:


Quantum dot, artificial molecule. No
degrees of freedom, completely discrete
energy spectrum, singular density of
states
Example 1 of Quantization:
Quantization at the Si-SiO2 Interface
VG
Accumulation of
minority electrons EC

W Ei
E FS
EV
p-type SC
electrons qVG
(x )
Wf
E FM
QG Qs  Q N  qN AW f
d ox d ox  W f Energy
x
-qNA

QN x-axis
Capacitance Degradation

Gate
Cox Cox
Ctot  
meta l g ates
Cox Cox Cox
Cpoly 1  1
C poly Cinv  Cdepl Cinv
ε ox
Cox 
t ox
1) Long channel devices, tox large
Cox small, Cox/Cinv→0, Ctot=Cox
Cinv Cdepl 2) Nano-scale devices, tox small
Cox large, Cox/Cinv finite, Ctot<Cox

Note that Cinv is always large because the


thickness of the inversion layer is small
Substrate
Threshold Voltage Shift
500
Van Dort experimental data for t =14 nm
ox
400 Our simulation results for t =14 nm
ox
[mV]

300
th

200
V

100

0
16 17 18
10 10 10
-3
N [cm ]
A
Example 2 of Quantization:
Quantum Wells and Heterostructures

Ec  fE g empiricall y f  0.65 for GaAs/AlGaA s

A B A Each state (c1, c2, hh1, hh2,


etc. corresponds to the
CB
formation of a two-
c2
Ec dimensional subband, which
is free electron like in plane
c1
parallel to well.
hh1
hh2 lh1 Ev
VB
Eg  E AlGaAs
g E GaAs
g
QW
Epitaxial Growth: MBE, MOCVD,
MOMBE, MOVPE…

Growth Chamber
LN2

Transfer Chamber
Surface Prep Chamber

Ion Pump
Cryopump
Epitaxial Layer Structure: Vertical Confinement

TEM Cross Section


Band Diagrams of Heterostructures
Band Allignments

Straddled – Type I Staggered – Type II Broken – Type III

There have been numerous attempts and models to


predict band offsets.
Quasi-Two Dimensional System
E E

kx, ky D

HH

LH

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