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Ecd # 02

The document discusses transistor modeling for small signal AC analysis. It describes two models: 1. The hybrid model which uses fixed parameters (hf, hr, etc.) that are provided by manufacturers for a given operating point. It is limited to that operating condition. 2. The re model which uses a diode and controlled current source to model the transistor. The parameters (re) can be determined for any operating region but do not account for output impedance effects. Both models are examined for common base, common emitter, and common collector configurations. The hybrid model is generally preferred as it provides output impedance effects and fixed parameters across operating conditions.

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42 views37 pages

Ecd # 02

The document discusses transistor modeling for small signal AC analysis. It describes two models: 1. The hybrid model which uses fixed parameters (hf, hr, etc.) that are provided by manufacturers for a given operating point. It is limited to that operating condition. 2. The re model which uses a diode and controlled current source to model the transistor. The parameters (re) can be determined for any operating region but do not account for output impedance effects. Both models are examined for common base, common emitter, and common collector configurations. The hybrid model is generally preferred as it provides output impedance effects and fixed parameters across operating conditions.

Uploaded by

Hat Hackers
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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BJT

TRANSISTOR MODELLING
Introduction
• Examine the Small signal AC response of BJT
amplifier by reviewing the models used to
represent the transistor in the sinusoidal AC
domain

• Small Signal AC Analysis:


– The re Model
– The Hybrid Model
Amplification in AC Domain
BJT Transistor Modeling
The Hybrid Model The re Model
i. Manufacturers specify the i. The re parameters in this region
can be derived directly from
hybrid parameters for a hybrid parameters
particular operating region
ii. Can be determined for any
region of operation within the
ii. Limited to particular set of active region & are not limited
operating conditions by single set of parameters
provided by the specification
sheet
iii. Does provide the output
impedance level & feedback iii. Fails to account for the output
impedance level & feedback
effect from output to input effect from output to input
BJT Transistor Modeling
• Consider the following circuit:
BJT Transistor Modeling
• Its small signal AC equivalent circuit is
BJT Transistor Modeling
• Analysis such as superposition, Thevenin can be
applied to determine the required quantities

• Identify the important quantities to be determined


Input Impedance
• More the input impedance, more will be the
level of signal form the source that reaches
the system (or Amplifier)

• In other words, the system with more input


impedance becomes more sensitive to the
input signals
Output Impedance
• The output impedance is determined at the
output terminals looking back into the system
with the applied signal set to zero
Output Impedance
• If significant current gain is required, the
output impedance must be as large as
possible
Voltage Gain
• The no-load voltage gain is greater than
loaded voltage gain
Current Gain
Phase Relationship
Frequency
• Other factor that will effect the parameters as
discussed above is frequency at low and high
end of frequency spectrum
The re Model
• Employs a diode & controlled current source to duplicate
the behavior of transistor in the region of interest

• A Current Controlled Current Source where parameters of


current source are controlled by current elsewhere in the
network

• The re model may be produced for all three configurations


– Common Base
– Common Emitter
– Common Collector
Common Base Configuration
• In figure, Common Base pnp transistor is used

• The FB junction behaves like a diode

• The RB junction behaves like a current source


who current (Ic) is controlled by input current
(Ie)
Ic = ∝Ie
Common Base Configuration
• The diode can be replaced by its AC resistance
using the following formula

• Where IE is the DC current through diode at Q-


point
Common Base Configuration
• The Zi ranges from 0 to 50Ω

• The ZO ranges from 1 to 2MΩ


Common Emitter Configuration
Common Emitter Configuration
• The i/p & o/p current are related by

• The current through diode is


Common Emitter Configuration
• The Zi ranges from fews ohms to 7k ohms

• The ZO ranges from 40 to 50k ohms


Common Collector Configuration
• Common Emitter Model is normally applied
rather than defining model for CC
configuration
The Hybrid Equivalent Model
• In the re model, the Zi varies with the Q-point,
therefore it is sensitive to operating conditions

• Parameters are defined in specification sheets


only for given operating point

• The Hybrid parameters given below are for


2N4400 transistor, IC = 1mA, VCE = 10V
The Hybrid Equivalent Model
The Hybrid Equivalent Model
The Hybrid Equivalent Model
Complete Hybrid Equivalent Circuit
Common Emitter Hybrid Model
Common Base Hybrid Model
Approximate
Hybrid Equivalent Model
Approximate
Hybrid Equivalent Model
Hybrid Vs re Model
Hybrid Vs re Model
• hi varies with IC & should be determined at
operating levels whreas hf remains constant

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