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    Fundamentals of Modern VLSI Devices and Fabrication

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    Chandru Badachi
    The document summarizes the history and evolution of VLSI technology, beginning with major milestones like the invention of the bipolar transistor in 1940 and the first integrated circuit in 1958. It describes the development of MOSFET and CMOS technology in the 1960s and 1970s, which improved integration levels and addressed limitations of bipolar transistors. The document outlines increasing scales of integration from SSI to VLSI and beyond. It notes ongoing challenges in driving integration such as higher speeds, lower power, and increased miniaturization.

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    Fundamentals of Modern VLSI Devices and Fabrication

    Uploaded by

    Chandru Badachi
    218 views12 pages
    The document summarizes the history and evolution of VLSI technology, beginning with major milestones like the invention of the bipolar transistor in 1940 and the first integrated circuit in 1958. It describes the development of MOSFET and CMOS technology in the 1960s and 1970s, which improved integration levels and addressed limitations of bipolar transistors. The document outlines increasing scales of integration from SSI to VLSI and beyond. It notes ongoing challenges in driving integration such as higher speeds, lower power, and increased miniaturization.

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    Presentation on Introduction to Modern VLSI Devices

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    The document summarizes the history and evolution of VLSI technology, beginning with major milestones like the invention of the bipolar transistor in 1940 and the first integrated circuit in 1958. It describes the development of MOSFET and CMOS technology in the 1960s and 1970s, which improved integration levels and addressed limitations of bipolar transistors. The document outlines increasing scales of integration from SSI to VLSI and beyond. It notes ongoing challenges in driving integration such as higher speeds, lower power, and increased miniaturization.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    218 views12 pages

    Fundamentals of Modern VLSI Devices and Fabrication

    Uploaded by

    Chandru Badachi
    The document summarizes the history and evolution of VLSI technology, beginning with major milestones like the invention of the bipolar transistor in 1940 and the first integrated circuit in 1958. It describes the development of MOSFET and CMOS technology in the 1960s and 1970s, which improved integration levels and addressed limitations of bipolar transistors. The document outlines increasing scales of integration from SSI to VLSI and beyond. It notes ongoing challenges in driving integration such as higher speeds, lower power, and increased miniaturization.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 12

    Fundamentals of Modern VLSI

    Devices and Fabrication


    History and Evolution of VLSI Technology
    Chronology of Major milestones in the development of VLSI

    • 1940---First Bipolar Transistor

    • 1958--- First IC Invented

    • 1960--- First MOSFET invented

    • 1963---First CMOS invented

    • 1971--- Microprocessor

    • 1980 onwards VLSI Era


    Bipolar Transistors

    • Transistors have been used basically for


    amplification and also as a switch.
    • Bipolar Transistors were invented in the year
    1947 by William Shockly.
    • The term Transistor is derived from “Transfer
    Resistor”
    • The invention of transistor had a large impact in
    the field of Electronics and also has led to many
    other inventions.
    • This development has resulted into a sustained
    growth leading to VLSI.
    Integrated Circuit(IC)
    • An electronic circuit formed on a small piece of
    semiconducting material, which performs the same
    function as a larger circuit made from discrete
    components.
    • First Integrated Circuit(1959, By JACK KILBY)
    MOSFETS and CMOS
    • In the year 1960 to 70 n-channel MOSFET and p-Channel
    MOSFET were available separately.
    • These were suffered with some limitations.
    • Slow in operation
    • Higher layout density
    • Large standby power dissipation
    • Advantages:
    • Fabrication process was very simple
    • Requires single doping
    • Then level of integration had been enhanced to
    accommodate both p-channel and n-channel on a single
    chip called as Complementary MOS Technology.

    • CMOS is the complementary metal oxide semiconductor


    and is the technology to construct the integrated circuits
    used in microprocessors, microcontrollers, static RAM and
    other digital logic circuits.
    Continued.... MOSFET and CMOS
    • The MOSFET made out of CMOS Technology
    offered advantages such as
    • Low standby power dissipation
    • The active power dissipates only during switching
    activities.
    • In spite of having been integrating more
    number of components on a chip the
    limitation was not a problem of heat
    dissipation and is still air cooled.
    Scale of Integration
    • Small scale integration circuit: <100 compo.
    • Medium scale integration circuit: <500 compo.
    • Large scale integration circuit: 500-300K compo.
    • Very large scale integration circuit:>300K compo.
    • Ultra Large scale integration circuit:>1500K.
    The worlds smallest chip is developed by Hitachi
    Challenges in Integration
    • Higher Circuit Speed
    • Lower power dissipation
    • Higher packaging density
    • Miniaturization
    Trends in lithographic feature size and
    number of transistors per chip for DRAM and
    Microprocessor chips.
    • The earlier trend of Bipolar transistors faded away after
    CMOS transistors were made available.
    • The usage of Bipolar has been confined to only where
    raw circuit speed makes an important difference.
    • Further, progress in the process of chip manufacturing
    has enabled to reduce the chip size, pack more
    components in same chip area led to exponential growth
    in the semiconductor industry.
    • If the size of the silicon device is reduced the speed
    increases and cost reduces.
    • Present transistors are 20 times more faster and occupy
    less than 1% of the area of those built years ago.
    Continued.....
    • The DRAM have characteristically highest
    component count of any IC.
    • It is because of Small size of one transistor
    memory cell.
    Modern CMOS Transistors
    Modern Bipolar n-p-n Transistor

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