Transistor Biasing
Transistor Biasing
Transistor Biasing
The proper flow of zero signal collector
current and maintenance of proper
collector emitter voltage during the
passage of signal is known as transistor
biasing.
BE junc-FB while CB junc-RB during the
application of the signal, this can be
achieved with a bias battery or associating
a circuit with a transistor.
The Circuit which provides transistor
biasing is known as Biasing circuit
Stabilisation
The Ic in a
transistor changes
rapidly when,
Temperature
changes
The transistor is
replaced by another
of same type
The process of
making operating
point independent
of temperature
changes or
variations in
transistor
parameters is
known as
Stabilisation
Methods of Transistor
Biasing
The following are the most widely
used methods of obtaining transistor
biasing from one source of supply.
(Vcc):
Base resistor method
Emitter bias method
Biasing with collector feed back resistor
Voltage divider bias
Working
In all these methods same principle
is used, required value of base
current (and hence Ic) is obtained
from Vcc in the zero signal
conditions.
The value of Rc is selected keeping in
mind that Vce should not fall below
0.5V for Ge and 1V for Si transistors.
Circuit Analysis
Emitter Bias
Circuit Analysis
This circuit differs
from bas-bias
circuit in two
important aspects.
2 separate dc
voltage sources are
used
A resistor RE is
connected in the
emitter circuit
Circuit Description
Two resistances R1 and R2 are connected
across the supply voltage Vcc and
provide biasing
The Emitter RE provides stabilization
Voltage divider formed by R1 and R2
The voltage drop across R2 forward
biases the base-emitter junction
This causes the base current and hence
the collector current flow in the zero
signal conditions
Circuit Analysis