Scribd
Upload
234 views17 pages

Power Igbt

1. IGBT is a hybrid power semiconductor device that combines the high input impedance and gate-drive characteristics of a MOSFET with the low on-state conduction losses of a bipolar junction transistor (BJT). 2. An IGBT has a structure consisting of a MOSFET gate that controls a bipolar transistor. 3. It can operate in three regions - cutoff, active, and saturation - like other semiconductor devices, with its operating point determined by the gate-emitter voltage.

Uploaded by

nandhakumarme
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
234 views17 pages

Power Igbt

1. IGBT is a hybrid power semiconductor device that combines the high input impedance and gate-drive characteristics of a MOSFET with the low on-state conduction losses of a bipolar junction transistor (BJT). 2. An IGBT has a structure consisting of a MOSFET gate that controls a bipolar transistor. 3. It can operate in three regions - cutoff, active, and saturation - like other semiconductor devices, with its operating point determined by the gate-emitter voltage.

Uploaded by

nandhakumarme
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 17

IGBT: Insulated-Gate Bipolar Transistor

Combination BJT and MOSFET


High Input Impedance (MOSFET)
Low On-state Conduction Losses (BJT)

High Voltage and Current Ratings


Symbol

Cross-Sectional View of an IGBT


Metal

Silicon Dioxide

Metal

IGBT Equivalent Circuit for VGE<VT


+
IBPNP

IEPNP

ICNPN
IBNPN

ICPNP

VCC

Leakage Current
Both transistors are OFF

IENPN

IRBE

IGBT Equivalent Circuit for VGE>VT


+
PNP transistor turns ON,

VCC

RMOD decreases due to


carrier injection from the
PNP Emitter.

MOS transistor conducts,


drawing current from the
Base of the PNP transistor.

NPN Transistor
becomes forward
biased at the BE,
drawing current
from the Base of
the PNP transistor.

Channel is Induced When VGE>VT

RMOD

PNP
electrons

NPN

RBE
Induced Channel

IGBT Output Characteristics

Follows an SCR
characteristic

IGBT Transfer Characteristic

IGBT Used as a Switch

Fairchild FGA25N120AND IGBT

10

11

12

13

14

15

Cut-off region
Saturation region
Active region

I) IGBT is a hybrid device which combines the advantages of MOSFET and BJT.
ii) An IGBT is formed by adding a p+ collector layer on the drain drift layer of a Power
MOSFET.
(ii) Punch through IGBT has a thin n+ buffer layer between the p+ collector layer and n-drain
drift layer. They have significantly lower conduction loss.
(iii) The IGBT cell structure embeds a parasitic thyristor in it. Latching up of this thyristor is
prevented by special structuring of the body region and increasing the effectiveness of the

body shorting.
(iv) From the operational point of view an IGBT is a voltage controlled bipolar device.

Characteristics Features
Modes of operation
POWER IGBT

Advantages

(i) The IGBTs have a slightly positive


temperature coefficient of the on-state voltage
drop which makes paralleling of these devices
simpler.
(ii) An IGBT does not exhibit second break
down phenomena as in the case of a BJT

Disadvantages

(i) The maximum allowable collector current in an IGBT is


restricted by the static latch up consideration.
(ii) The RBSOA of IGBT is rectangular for low values of
dvcece/dt

16

SUMMARY
1. IGBT is a hybrid device which combines the advantages of MOSFET and BJT.
2. An IGBT is formed by adding a p+ collector layer on the drain drift layer of a Power
MOSFET.
3. Punch through IGBT has a thin n+ buffer layer between the p+ collector layer and ndrain drift layer. They have significantly lower conduction loss.
4. The IGBT cell structure embeds a parasitic thyristor in it. Latching up of this thyristor is
prevented by special structuring of the body region and increasing the effectiveness of the
body shorting.
5. From the operational point of view an IGBT is a voltage controlled bipolar device.
6. The operational equivalent circuit of an IGBT has an n channel MOSFET driving a p-n-p
BJT.
7. Like other semiconductor devices on IGBT can also operate in the cut off active and
saturation regions.
8. When the gate-emitter voltage of an IGBT is below threshold it operates in the cut off
region.
9. For a given load resistance the operating point of an IGBT can be moved from cut off to
saturation through the active region by increasing the gate-emitter voltage.
17

You might also like