Power Converters Lecture - 1: Dr. U. T. Shami

Power
Converters
Lecture -1
Introduction to
Power Electronic
Devices
Dr. U. T.
Reference of Slide Contents

Reading material of the slides presented in this lecture
can be found from the following books:
Chapter -2 and 3
of
Power Electronics
Converters and Regulators (Third Edition)
By
Branko L. Doki Branko Blanua
Diodes and Transistors

In power electronic circuits of the pulse DC/DC or DC/AC voltage
converters, the switching elements are transistors (bipolar and
unipolar) and diodes.
In the analysis of a basic circuit, transistors and diodes have been
considered as ideal switches (zero on resistance, infinite offresistance, and instantaneous transition from one state to the other).
However, they are not ideal switches but have real parameters, in
both the static and dynamic modes of operation.
The influence of these parameters on the characteristics of pulse
converters is considerable, particularly on the efficiency factor.
For this reason, in this chapter, a description is given of the basic
switching characteristics of transistors (bipolar and unipolar) and
diodes.
Diode as a Switch
The static characteristic of a p-n junction diode is
nonlinear and is determined by
where Is is the reverse saturation current, md is the
correction factor (md = 2 for small currentsin the vicinity
of the knee of the characteristic and md = 1 at higher
currents), t is the temperature potential.
The static characteristic
consists
of three regions:
conduction region (lowresistance),
cut off (high-resistance),
Breakdown region.
Diode as a Switch
A diode can be used as a switch because its resistance can be controlled by
the applied voltage.
When a diode is forward biased and if Vd > VDt, where VDt is the conduction
threshold voltage, the diode is on (conducting). Then its resistance is small
(from 10 to 100 ). Since the threshold voltage of Si diodes is VDt = (0.50.6) V,
in the conduction region Vd mt, and exp(Vd/mdt) 1, so the current is
The dynamic diode resistance is
where IDQ is the diode current at the quiescent operating point Q. Any
increase of the diode current IDQ decreases the dynamic resistance. For
instance, for IDQ = 1 mA, rd = 26 and for IDQ = 26 mA, rd = 1 . It has been
assumed that t = 26 mV and md = 1.
It should be emphasized that rd is the p-n junction resistance.
Diode as a Switch
A conducting diode can be approximated, with a satisfactory accuracy, by a
straight line of the slope determined by RD and a voltage source VDt
On the other hand, in the majority of diode applications as a switch, the

resistance of the driving circuit, which determines the current IDQ in the
quiescent operating point Q, is much higher than RD so that the voltage
variation across the diode is negligible.
Diode as a Switch
When a diode is reverse biased, i.e., VAK < 0, and if |VAK| > mdt, then
exp(VD/mdt) 1 and the current through the diode is equal to the reverse
saturation current IDF = IS. Namely, already at VAK = 0.2 V from (2.1) it
follows that ID = 0.98IS. This means that at very small reverse voltages the
cathode-anode current is saturated at IS.
At reverse bias, the concentration of charge carriers in the depleted region drops
well below the equilibrium concentration. Consequently, recombination is
decreased and generation prevails. Owing to the generation of electronhole pairs a
reverse current proportional to the volume of the depleted region Sd and the rate of
generation of pairs G = ni/(2o) arises, i.e.,
where S is the p-n junction area, d is the width of the transition region, ni is the
intrinsic concentration of free charge carriers, 0 is the lifetime of carriers in the
transition region.
2.1.1 The Temperature Characteristics

The basic static parameters of a diode as a switch are the reverse current IR
when diode is not conducting and the forward bias voltage VD when it is
conducting. In many applications the temperature sensitivities of these
parameters are of considerable influence on the temperature sensitivities of the
functional parameters of the circuits incorporating diodes.
2.1.1 The Temperature Characteristics
2.1.2 Dynamic Diode Characteristics
2.1.3 Schottky Diodes
2.2 Bipolar Transistor as a Switch
2.2.1 The Cut Off Region
2.2.2 The Saturation Region
2.2.3 Static Transfer Characteristic
2.2.3 Static Transfer Characteristic
2.2.4.1 Transistor Turn On
2.2.4.1 Transistor Turn OFF
2.2.4.3 Optimum Drive
2.2.4.4 Speed Up Capacitor
2.2.5 Non-saturated Switch
Explanation of BAKERS clamp
BAKERS Clamp
BAKERS Clamp: Application
2.2.7 Inductively Loaded Switch
2.2.7.1 Transistor Protection

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Reference of Slide Contents

Diodes and Transistors

The dynamic diode resistance is

On the other hand, in the majority of diode applications as a switch, the

2.1.1 The Temperature Characteristics

2.1.1 The Temperature Characteristics

2.1.2 Dynamic Diode Characteristics

2.1.3 Schottky Diodes

2.2 Bipolar Transistor as a Switch

2.2.1 The Cut Off Region

2.2.2 The Saturation Region

2.2.2 The Saturation Region

2.2.2 The Saturation Region

2.2.2 The Saturation Region

2.2.3 Static Transfer Characteristic

2.2.3 Static Transfer Characteristic

2.2.4.1 Transistor Turn On

2.2.4.1 Transistor Turn OFF

2.2.4.3 Optimum Drive

2.2.4.4 Speed Up Capacitor

2.2.5 Non-saturated Switch

2.2.5 Non-saturated Switch

Explanation of BAKERS clamp

2.2.5 Non-saturated Switch

BAKERS Clamp: Application

2.2.7 Inductively Loaded Switch

2.2.7.1 Transistor Protection

2.2.7.1 Transistor Protection

2.2.7.1 Transistor Protection

2.2.7.1 Transistor Protection

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