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Microwave Devices

Transffered electron devices

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Yagnesh Ashar
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57 views15 pages

Microwave Devices

Transffered electron devices

Uploaded by

Yagnesh Ashar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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TRANSFER ELECTRON DEVICES

The application of two-terminal semiconductor devices at microwave frequencies has


been increased usage during the past decades. The CW, average, and peak power
outputs of these devices at higher microwave frequencies are much larger than those
obtainable with the best power transistor. The common characteristic of all active
two-terminal solid-state devices is their negative resistance. The real part of their
impedance is negative over a range of frequencies. In a positive resistance the current
through the resistance and the voltage across it are in phase. The voltage drop
across a positive resistance is positive and a power of (12 R) is dissipated in the resistance.
In a negative resistance, however, the current and voltage are out of phase by
180. The voltage drop across a negative resistance is negative, and a power of
(-[2 R) is generated by the power supply associated with the negative resistance. In
other words, positive resistances absorb power (passive devices), whereas negative
resistances generate power (active devices).

Differences b/w Microwave Transistors


and Transfer Electron Devices(TEDs)
MICROWAVE
TheMicrowave
-TRANSISTORS

transistordevices include
microwave BJT, FET, HBT, tunnel
diode etc. Here electrons and
holes both participate in the
transport process.

TRANSFER ELECTRON
DEVICES

TheTEDdevices include Gunn


diode, LSA diode and Inp diode.
Here electron transfer from lower
conduction valley to the upper
satellite valley.

It consists of junctions or
gates.

It is not having any junction or


gate, it is a bulk type of device.

It is fabricated from elemental


semiconductor such as Ge and Si.

It is fabricated from compound


semiconductor such as GaAS and
Inp.

It operates with low energy


"Warm" electrons.

It operates with high energy


"hot" electrons.

Advantages:Low cost, low


power supply, small size

Advantages:Low noise, high


gain, low power, reliable, lighter
in weight

Because of these fundamental differences, the theory and


technology of transistors
cannot be applied to TEDs.

The Gunn diode is a so-called transferred electron device, Since


Electrons are transferred from one valley in the conduction ban
another valley.

GUNN DIODE
A Gunn diode, also known as a transferred electron device (TED), is a form of diode,
a two-terminal passive semiconductor electronic component, with negative resistance,
used in high-frequency electronics. Its largest use is in
Electronic oscillators to generate microwaves, in applications such as
Radar speed guns and microwave relay data link transmitters.

RUSSIAN GUNN DIODE

1. Its internal construction is unlike other diodes in that it consists only ofN-doped
semiconductormaterial, whereas most diodes consist of both P and N-doped regions.
2. It therefore does not conduct in only one direction and cannotrectifyalternating current
like other diodes, which is why some sources do not use the term
diodebut prefer TED.
3.Gunn diode is termed as diode because it has two electrodes.
4. In the Gunn diode, three regions exist: two of those are heavily N-doped on each
terminal, with a thin layer of lightly n-doped material between. When a voltage is applied to
the device, the electrical gradient will be largest across the thin middle layer. If the voltage
is increased, the current through the layer will first increase, but eventually, at higher field
values, the conductive properties of the middle layer are altered, increasing its resistivity,
and causing the current to fall. This means a Gunn diode has a region of
negative differential resistancein itscurrent-voltage characteristiccurve, in which an
increase of applied voltage, causes a decrease in current.
5. This property allows it toamplify, functioning as a radio frequency amplifier, or to
become unstable and oscillate when it isbiasedwith a DC voltage.

Construction

GUNN EFFECT
A schematic diagram of a uniform n-type GaAs diode with ohmic contacts at the
end surfaces is shown in Fig.

1.)Above some critical voltage, corresponding to an electric


field of 2000-4000 volts/cm, the current in every specimen
became a fluctuating function of time.
2.) This fluctuation took the form of a periodic oscillation
superimposed upon the pulse current.
3.) The frequency of oscillation was determined mainly by
the specimen, and not by the external circuit.
4.) The period of oscillation was usually inversely
proportional to the specimen length and closely equal to the
transit time of electrons between the electrodes.

From Gunn's observation the carrier drift velocity is linearly increased from
zero to a maximum when the electric field is varied from zero to a threshold value.
When the electric field is beyond the threshold value of 3000 Wcm for the n-type
GaAs, the drift velocity is decreased and the diode exhibits negative resistance.

By applying a voltage pulse of 16-V amplitude and 10-ns duration to a


specimen of n-type GaAs 2.5 X 10-3 cm in length.The oscillation frequency
Was 4.5GHz.
Gunn found that the period of these oscillations was equal to the transit time
of the electrons through the specimen calculated from the
threshold current.

Gunn also discovered that the threshold electric field Eth varied with the length
and type of material. A specimen of n-type GaAs of length L = 210 x 10^-6 m
and cross-sectional area 3.5 x 10^-3 cm2 with a low-field resistance of 16 Ohms. Current
instabilities occurred at specimen voltages above 59 V, which means that the
threshold field is

Eth=V/L=2810 volts/cm

In some materials (III-V compounds such as GaAs and InP), after an electric field
in the material reaches a threshold level, the mobility of electrons decrease as the
electric field is increased, thereby producing negative resistance.
Electrons (GaAs) can exist in a high-mass low velocity state as well
as their normal low-mass high-velocity state and they can be forced into the
high-mass state by a steady electric field of sufficient strength. In this state
they form clusters or domains which cross the field at a constant rate
causing current to flow as a series of pulses. This is the Gunn effect.

GUNN DIODE AS OSCILLATOR

THANK YOU

YAGNESH ASHAR
5TH B
TELECOMMUNICATION ENGINEERING
CMRIT

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