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Nuclear Science & Engineering: Presentation On Carbon Nanotube Field Effect Transistor - Prashant Ranjan 2k14/NSE/21

This document discusses carbon nanotube field effect transistors (CNFETs). It provides background on CNFETs, describing their structure and operation. It also discusses major contributors to CNFET research, including work by NEC and IBM. The document outlines benefits of CNFETs such as high crystallinity and unique quantum properties. However, it also notes challenges in producing CNTs with consistent diameters and chirality as well as mass production difficulties. The future of CNFETs is seen as including applications in memory, batteries, sensors, and nanoelectronics to replace silicon.

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309 views17 pages

Nuclear Science & Engineering: Presentation On Carbon Nanotube Field Effect Transistor - Prashant Ranjan 2k14/NSE/21

This document discusses carbon nanotube field effect transistors (CNFETs). It provides background on CNFETs, describing their structure and operation. It also discusses major contributors to CNFET research, including work by NEC and IBM. The document outlines benefits of CNFETs such as high crystallinity and unique quantum properties. However, it also notes challenges in producing CNTs with consistent diameters and chirality as well as mass production difficulties. The future of CNFETs is seen as including applications in memory, batteries, sensors, and nanoelectronics to replace silicon.

Uploaded by

ranjan_prashant52
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Nuclear Science & Engineering

Presentation on
Carbon Nanotube Field Effect
Transistor
-Prashant Ranjan
2k14/NSE/21
1

Overview
Background
Major contributors
Benefits of CNFETs
Difficulties and problems with CNTs
The future of carbon CNTs

What is a carbon nanotube?

A carbon nanotube is a graphene sheet (with carbon atoms appearing in a


hexagonal pattern) rolled up to form a hollow cylinder. CNTs have
extremely low electrical resistance because electrons can travel for large
distances without scattering (ballistic transport). This is partly due to their
very small diameter and huge ratio of length to diameter. Also, because of
their low resistance, CNTs dissipate very little energy. This will prove
useful in solving the power consumption problems that are plaguing Silicon
circuits.
3

Carbon nanotube formation


Graphene Sheet

Semiconductor Types

The vector C in the figure above is the vector normal to the


circumference vector in the direction the tube is rolled.
C = na1 + ma2 gives the vector C. The values for the scalars
n and m determine whether the nanotube is conducting or
semi-conducting.
4

MOSFETs: The End of an Age


Past 40 years MOSFETs have been most widely

used technology.
Latest technology MOSFET has minimum feature
of 0.25 micron.
Quantum mechanics and fabrication techniques are
limiting minimum feature size.
New nano-devices will take advantage of quantum
mechanical phenomena which was previously
ignored.
5

Carbon Nanotube Field Effect


Transistor
In the generic CNFET a carbon nanotube is placed

between two electrodes while a separate gate electrode


controls the flow of current in the channel.

Basic CNFET Design

Actual CNFET

Two Basic CNFET Designs


Two common designs:
Coaxial Shottky-Barrier

CNFETs
MOSFET-like CNFETs

Ambipolar I-V Behavior

P- and N-Type CNTs


CNTs are naturally p-type because exposure to the oxygen in the air causes the

Fermi level to shift towards the valence band. However, there are several
methods available to convert p-type CNTs to n-type:
Annealing in vacuum
Doping with Potassium

P- and N-Type CNFET I-V Plots

Single-Electron CN Transistor
Bending of a Single Walled
Carbon Nanotube

Researches at Delft University in the


Netherlands created the worlds first singleelectron transistor by placing two sharp
bends (i.e., large potential barriers) in a
CNT 20 nm apart to create a conducting
island that electrons must tunnel in to.

SET and Conducting Island

Circuit Example: CNFET


Inverter
CNFETs have already been used to
implement basic logic circuits such as the
inverter.
CNFET Inverter and Voltage
Transfer Characteristic

10

Major Contributors: NEC


laboratory
One of the biggest and longeststanding corporation laboratories in
nanotube research.
Have used nanohorns to produce
small fuel cells for mobile applications.
Are active in CNFET design:
They have developed a stable
fabrication technology for CNT
transistors, and transistors produced with
this process have demonstrated more
than 10 times the transconductance of
silicon MOS transistors.
One of NECs future research goals is
to replace the bulky metal electrodes of
their CNFETs with other nanotubes such
as Boron-Nitride.
11

Major Contributors: IBM


IBM has used CNTs and their ambipolar characteristics to produce
nanotube light sources. One prototype used a 1.4-nm diameter nanotube to
produce light through the collision of holes and electrons. Varying the gate
voltage also controlled where along the length of the CNT the light was
emitted.
Nanotube Light

12

Varying the Light Emission Point

Major Contributors: IBM


(Cont.)
Constructive Deconstruction:
IBM developed a method for
controlling which kinds of nanotubes
are deposited on the substrate.
Originally, both metallic and
semiconducting CNTs are grown, then
electrodes are placed across the
bundles. A high voltage is applied
across the electrodes which destroys the
metallic CNTs but leaves the
semiconducting ones intact.

13

Const. Deconst. Process Diagram

Benefits of CNFETs
High single crystallinity
Low defect density, grain boundary free
Predictable electron transport properties
Reliable device performance
Unique properties due to quantum confinement effects
Enhancement in device characteristics
Potential to revolutionize nano-scale science and technology

14

Advantages of CNTs over


Silicon

As Silicon transistors are scaled down the doping of

the channel has to increase proportionately while its


volume decreases.
The change in the number of dopants produces
important differences in switching properties and
degrades the overall performance of the system.
Nanotube transistors can operate even without dopants
and are less sensitive to differences in the channel
length. Instead, CNFETs depend on the diameter of the
tube and its chirality.
15

CNT Challenges
The production methods available for CNTs either produce

CNTs with widely varying sizes and chiralities or are


prohibitively expensive.

Exposure to open air can cause an n-type CNT to revert

back to p-type.

Placing CNTs on substrate is also a big challenge.


The main obstacle to CNTs replacing Silicon transistors is

that there are no mass production methods available for


CNTs to rival the well-developed Silicon and
photolithography process at present.

16

The Future
Medium term (5-10 years)

Memory devices
Fuel cells, batteries
Biosensors (CNT, molecular)
Biomedical devices
Advances in gene sequencing

Long term (> 15 years)

- Nanoelectronics (CNT)
- Molecular electronics
- Use in new aerospace and automotive industry
composites
17

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