Scribd
Upload
480 views18 pages

Microwave Solid State Device

Microwave devices face two main problems: stray capacitance/inductance and transit time. Interdigital design and using gallium arsenide instead of silicon help remedy these issues. Common microwave transistors include GaAsFETs and HEMTs. Other microwave devices include Gunn diodes, pin diodes, varactor diodes, and microwave tubes. Microwave antennas include horn antennas of various shapes like pyramidal and conical as well as slot antennas.

Uploaded by

Amit Shankar Choudhary
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
480 views18 pages

Microwave Solid State Device

Microwave devices face two main problems: stray capacitance/inductance and transit time. Interdigital design and using gallium arsenide instead of silicon help remedy these issues. Common microwave transistors include GaAsFETs and HEMTs. Other microwave devices include Gunn diodes, pin diodes, varactor diodes, and microwave tubes. Microwave antennas include horn antennas of various shapes like pyramidal and conical as well as slot antennas.

Uploaded by

Amit Shankar Choudhary
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 18

Microwave Devices

By:
Amit Shankar
Choudhary
B.Tech (Electronics & Communication)
PGDM (Finance & Operation)
Microwave Solid State Devices

 Two problems with conventional transistors at


higher frequencies are:
 1. Stray capacitance and inductance.
 - remedy is interdigital design.
 2.Transit time.

- free electrons move quicker than
holes therefore change from silicon to Gallium
Arsenide

Microwave Transistors
 Conventional bipolar transistors are not
suitable for microwave frequencies.
 Electrons move faster than holes.
 Component leads introduce elevated
reactance.
 XL increases and XC decreases therefore
collector feedback becomes worse as
frequency increases.
 Transit time and mobility of carriers. As
transit time approaches signal period
phase shifts occur.

Microwave Transistors
 REMEDIES:

ØInterdigital design of emitter and base


minimizes capacitances.
ØGallium arsenide. Faster than silicon.
ØN type GaAsFET. Why N type?
ØFlat component leads.

Ø
Microwave Transistors
 REMEDIES contd.:
Ø Low noise design considerations:
 * Planar and epitaxial methods of
construction use diffusion and surface passivation
to protect surfaces from contamination as
opposed to diffusion method of mesa structure
implementing acid etching.

* Shot noise is proportional to the square of
current therefore operate at moderate Ic.

* Thermal noise is reduced at lower power
levels. With interdigital base design Rb is low
therefore lower voltage drop and less power.
Gunn Devices
 Uses phase shift to minimize transmit time.
 Transferred-electron device (TED).
 N type GaAs – electron mobility decreases
as electric field strength increases.
 Characterized by a negative resistance
region.
 A domain is developed that sustains
oscillations as a voltage is applied to the
substrate of GaAS.
 A pulse current develops as domain of
charge travels to the positive terminal.
Other Devices
 Pin Diodes - R.B.(R II C) F.B. (variable R)
 Varactor Diodes – R.B. (variable junction
capacitance)
 YIG Yitrium-Iron-Garnet Devices
 Dielectric Resonators
 MMICs – monolithic microwave integrated
circuits

HEMT
 High Electron Mobility Transistor
 Similar to GaAsFET construction.
 Difference is that motion of charge carriers is
confined to a thin sheet within a GaAs buffer
layer.
 GaAs/AlGaAs heterostructure epitaxy.
 The thickness of the channel remains constant
while the number of carriers is modulated by
the gate bias as opposed to a MESFET that
modulates the channel thickness.
 PHEMT- pseudomorphic HEMT used above 20 GHz
(mm wave)
Microwave Tubes
 Magnetrons
 Klystrons
 Travelling-Wave Tube
Microwave Horn Antennas

E-plane
H-plane

Pyramidal

Conical

Slot

You might also like