ASIC Tape Out: Designers' Perspective: C-DAC All Rights Reserved C-DAC/TVM/HDG/Aug'12
ASIC Tape Out: Designers' Perspective: C-DAC All Rights Reserved C-DAC/TVM/HDG/Aug'12
ASIC Tape Out: Designers' Perspective: C-DAC All Rights Reserved C-DAC/TVM/HDG/Aug'12
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Specification
Realization
Verification
Fabrication
Testing
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Functionality
Speed
Area
Power
Cost
Time to market.
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RTL Design
Verilog / VHDL
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gates
FF
FF
Schematic Design
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ADC
INPUT
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clock
OUTPUT
ROM
PLL
PROCESSING
LOGIC
RAM
FLASH
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Implementing the
Functionality
Mapping to Hardware logic
Primitives
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Hard macros
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IP Cores :
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EDA Tools
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(usually
The masks for different layer have grids of squares that are
either "on" or "off, the size of each square will be half of the
specified size.
Process
Nominal
High speed
Low power
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Frequency of Operation
Area
Operating voltage
Power requirement
Yield
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Cost
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Semiconductor Technology
selection
5V
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5V
VOUT2
Vt = 1V
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MOSFET Structure
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Speed of operation
Area of Chip
Power consumption
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Regular process
High speed process
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Multi Vt transistors
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MOSFET as a Switch
: Switch is ON
VGS < VT
: Switch is OFF
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MOSFET as a Switch
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VS
M1
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VIN >= VT
M2
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Reduce RL ??
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CMOS Technology
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CMOS Technology
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Process Finalizing
Reduce VT
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LOW VT CELLS
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Foundry / IP Vendor
Deliverables For Hardware
Mapping
Primitive Cell Behavioral Models (Verilog)
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input
C-DAC/TVM/HDG/Aug12
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output
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Mapping to Hardware :
Synthesis
Golden Register Transfer level (RTL)
Functionality to be implemented
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Max Fan-out
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Constraints (SDC)
Speed
Clock frequency
Power
Area
C-DAC/TVM/HDG/Aug12
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Input
2 Register (I2C)
Register 2 Register (C2C)
Register 2 Output (C2O)
Input
2 Output (I2O)
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C L K
800 M H z
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C
D e la y o f A N D g a t e
C L K
S e t u p t im e f o r F F
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C L K
1 G H z
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D e la y o f A N D
g a te
C L K
S e tu p tim e fo r F F
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Timing Library
Leakage power
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Synthesis
Route
Mapped Netlist
Constraints
SDC
LEF
Place and
Timing Library
.lib
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P&R :Floorplanning
C-DAC/TVM/HDG/Aug12
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Floor plan
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Placement
Good placement
No congestion
Shorter wires
Less metal levels
Smaller delay
Lower power dissipation
C-DAC/TVM/HDG/Aug12
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Bad placement
Congestion
Longer wire lengths
More metal levels
Longer delay
Higher power dissipation
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Placement
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Routing
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Constraints
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Clock Skew
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Synchronous Counter
FF2
FF1
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Setup Timing
CLK FF1
FF1_in
CLK FF2
Skew
FF2_in
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Hold Timing
CLK FF1
FF1_in
CLK FF2
FF2_in
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Power Routing
Creation of power grid to ensure Power Integrity
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Final layout
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Tape out
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SemiconductorManufacturingY
ield
Percentage ratio of good dies over total dies manufactured
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60/60
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foundry
C-DAC/TVM/HDG/Aug12
61/60
10 m
1971
3 m
1975
1.5 m
1982
1 m
1985
800 nm (.80 m)
1989
600 nm (.60 m)
1994
350 nm (.35 m)
1995
250 nm (.25 m)
1998
180 nm (.18 m)
1999
130 nm (.13 m)
2000
90 nm
2002
65 nm
2006
45 nm
2008
32 nm
2010
22 nm
2012
C-DAC/TVM/HDG/Aug12
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