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Esd

Electrostatic discharge (ESD) can damage semiconductor devices by causing unexpected failures. ESD occurs when static electricity builds up and discharges, transferring charge between objects at different voltages. This summary document discusses ESD failures in integrated circuits and outlines ESD protection methods used in semiconductor manufacturing to prevent device damage from electrostatic events.

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Abhishek Mat
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368 views

Esd

Electrostatic discharge (ESD) can damage semiconductor devices by causing unexpected failures. ESD occurs when static electricity builds up and discharges, transferring charge between objects at different voltages. This summary document discusses ESD failures in integrated circuits and outlines ESD protection methods used in semiconductor manufacturing to prevent device damage from electrostatic events.

Uploaded by

Abhishek Mat
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Electro Static Discharge

in Silicon IC Technologies

ESD
BY : Damodar B. Charate

Outline

Background to ESD
Static Charge Build-up
ESD Failures
ESD Models
ESD Protection

ELECTROSTATIC DISCHARGE
(ESD)

Electrostatic Discharge?

Sudden discharge of a charged body

Importance of ESD to the Semiconductor


Industry

Unexpected destruction of semiconductor


devices
Losses can occur anywhere from fabrication to
field
Millions of $ in real and hidden losses each year

ELECTROSTATIC DISCHARGE
(ESD)

Electrostatic Discharge (ESD) :


The transfer of electrostatic charge between
bodies or surfaces at different electrostatic
potential. ESD is a subset of EOS
Electrical Overstress (EOS):
The exposure of an object to a current or
voltage beyond its maximum ratings

Static Charge Build-Up

Materials Make Intimate Contact

Charge - Separation

TRIBOELECTRIC SERIES
POSITIVE (+)
Human Hands
Rabbit Fur
Glass (Quartz)
Mica
Human Hair
Nylon
Wool
Fur
Lead
Silk
Aluminum
Paper
Cotton
Steel
Wood
Amber
Sealing Wax
Hard Rubber
Nickel, Copper

Brass, Silver
Gold, Platinum
Sulfur
Acetate Rayon
Polyester
Celluloid
Orlon
Polyurethane
Polyethylene
Polypropylene
PVC
KEL F
Silicon
Teflon
NEGATIVE (-)

ESD Failure

ESD DAMAGE TO ICs

Any point from manufacture to field service


Handling the devices in uncontrolled
surroundings
Poor ESD control practices used
Types of Failure:

Catastrophic failure
Latent failure

What Causes Electronic


Devices to Fail?

Discharge to the Device


Discharge from the Device
Field Induced Discharges

What Fails?

Oxide breakdown of the transistor gates


(CDM)
Thermal in nature to the transistor junctions
(MM and HBM)
Metallization and Poly-silicon Burn-out
Hot-carrier injection

Oxide breakdown

Gate oxide damage in MOS transistor after the CDM stress

Junction Breakdown

Drain junction filamentation in MOS transistor due to the ESD stress

Metallization and Poly-silicon


Burn-out

Interconnects damage due to the ESD stress

Hot-carrier injection

Mechanism of charge injection in gate oxide region under ESD stress

ESD Model

ESD Model

Human Body Model or HBM

Machine Model or MM

Human handling of the chips)


Robotic handling in assemblies

Charged Device Model or CDM

Charge from the package itself

HBM

MM

CDM

ESD Waveform

ESD Protection
ESD PROTECTION IS ONLY AS STRONG AS THE
WEAKEST LINK!

ON Chip ESD Protection

Full Chip ESD Protection


ESD protection between power
Protection circuits for I/O pins

ESD Testing

Zapping modes: (a) PS-mode (b) NS-mode (c) PD-mode (d) ND-mode

How to Protect an IO IN ESD


Event

ESD protection required for a


typical IO PAD

ESD Protection on a IO PAD

How it works???

PAD to VDD (PD)

VSS to PAD (NS)

PAD to VSS (PS)

VDD to PAD (ND)

ESD Between IOs

RC Triggered Clamp

Snap Back Clamp

Grounded Gate NMOS in Snap Back Mode

Snap Based ESD Protection

Snap Based ESD Protection

A typical Input Signal PAD


RBUS

LV
LOCAL
CLAMP

P
PAD

RBUS

RBUS
VDDO
(RAIL)

RBUS

IO DEVICE

CORE
SIDE

LV
LOCAL
CLAMP

VSSO (RAIL)
RBUS

RBUS

RBUS

ESD Paths Between Diff Power


VDDO2V5

VSS

VDD
VSSO

VDD

VDDO3V3

VSSO

VDDO2V5
LV
CLAMP

VDDO3V3
Back to
Back
Diodes

LV
CLAMP

HV
CLAMP

HV
CLAMP

VSS

VSS

VDD

2.5V domain

VDD

3.3V domain

ESD protection in a
bidirectional I/O circuit.

Full Chip Wire Bond


LVTTL

DDR

LVTTL

LVDS

LVDS

LV
DS

DDR

LVTTL

S1 S2

S3

S4 S5
VDD
BUS
VSS

BUS

BUS

S6

VDDO
PAD

VDDO
(3.3V)

VSSO
PAD

BUS

VSS
PAD

VDDO
(2.5V)

VDD
PAD

VDDO
PAD

VSSO
PAD

VSS
PAD

VDD
PAD

VSSO BUS

A typical CMOS buffer stage (a) schematic (b) cross section

A typical CMOS Receiver (a) schematic (b) cross section

Layout Issues

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