Submitted By:-Nisar Ahmed Khan Roll No. - 00510100613 M.Tech. (RF & Microwave Engg.)

Submitted by:-
Nisar Ahmed Khan

Roll No.- 00510100613
M.Tech.(RF & Microwave Engg.)

Contents
Overview of The Gunn Diode
Gunn Effect
Two-Valley Model Theory
Gunn-Oscillation
Gunn Oscillation Modes
What is it?
semiconductor device which have only N type doped
(semiconductor) material.

The Gunn diode is used as local oscillator covering the microwave
frequency range of 1 to 100GHz
Gunn Diode is also known as:

Transferred Electron Device (TED).
Microwave Semiconductor Device
How it works?
By means of the transferred electron mechanism, it has the negative
resistance characteristic
Overview of The Gunn Diode
Gunn Diode was invented by physicist,John
Battiscombe Gunn, in 1963, in IBM.
Transferred Electron Effect was first published by:
Ridley and Watkins in 1961.Further work by Hilsum
in 1962,
Finally J.B. Gunn, observed it, using GaAs
semiconductor, in 1963.
In a negative resistance the current and voltage are out of
phase by 180.
The voltage drop across a negative resistance is negative and a
power of -I
2
R is generated by the power supply.
i.e positive resistance absorbs power (passive devices) and
negative resistances generates power (active devices).
GaAs (Galliam Arsenide ) has a property of negative
resistance.

The negative resistance in Gunn diode is due to

(a) electron transfer to a less mobile energy level

How electron move into low mobility ?

According to Einstien Equation

E=mc2

(b) high reverse bias

(c) electron domain formation at the junction

Transistors operate with either junctions or gates but
TEDs are bulk devices having no junctions or gates.

The majority of transistors are fabricated from Si or Ge
whereas TEDs are fabricated from GaAs, InP or CdTe.
Transistors operate with warm electrons whose energy
is not much greater than the thermal energy of the
electrons in the semiconductors whereas TEDs operate
with
hot electrons whose energy is very much greater
than the thermal energy.
Because of these fundamental differences, the theory
and technology of transistors cannot be applied to TEDs

Construction:

Gunn diodes are fabricated from a single piece of n-type
semiconductor,

Source Material:

Tri-methylgallium and arsenic (10% in H2).

Most Common Materials :

Gallium Arsenide (GaAs)
and Indium Phosphide (InP).
Gunn effect was discovered by J.B Gunn in IBM : 1963
Above some critical voltage, corresponding to an electric field of
2000~4000 V/cm, the current in every specimen (GaAs) became a
fluctuating function of time

Schematic diagram for n-type GaAs diode
Gunn Effect
+ Anode
Cathod -
Metal-coated contact
v = 10
5
m/s
High-field domain
(Continue)
The current waveform was produced by applying a voltage pulse of 59V
And 10ns duration
Oscillation frequency was 4.5Ghz
The period of oscillation is equal to the transit time of electrons through the
device

Current fluctuation of N-type GaAs reported by Gunn

Gunn Effect
5ns
10ns
0.222ns 4.5GHz
Drift velocity of electrons decrease when electric field excess certain
value
Threshold electric field about 3000V/cm for n-type GaAs.

Drift velocity of electrons in GaAs bulk Vs electric field
Gunn Effect-Negative Differntial Resistance
Drift velocity
3 10
2e7
Electric field [KV/cm]
Negative Differential Resistance
According to the energy-band theory of n-type GaAs, there are two
valleys in the conduction band
Effective mass of electron is given by:

K = 0
Lower valley
(Central valley)
Upper valley
(Satellite valley)
Central valley Satellite valley
2
2
2
* m
d E
dk
Rate of change of the valley curves slope

Effective mass of electron is given by:
Rate of change of the valley curves slope

Since the lower valley slope is shaper than the one in upper valley,
thus electron effective mass in upper valley is higher than that in
lower valley
So that, the mobility of electron in upper valley is less due to the
higher effective mass

Valley Effective mass M
e
Mobility u Cm
2
/V.s
Lower 0.068 8000
Upper 1.2 180
2
2
2
* m
d E
dk
*
n
n
e
m

* n-type GaAs
The current density vs E-field according to equation
( n ) l l u u J e n E
l u
Negative resistance : the current and voltage of a device are out
of phase by 180degree P = -I
2
R

Conductivity of n-type GaAs is given by

The differential resistance of the device is

( n ) l l u u e n
( ) ( )
l u l u
l u l u
d dn dn d d
e e n n
dE dE dE dE dE

,
,
:
:
l u
l u
n
Electron density in lower/upper valley

Mobility in lower/upper valley
(1)

According to Ohms law:
(2)

rewrite equation 2:

(3)

Current density J must decrease with increasing field E
Negative resistance occurs when

(4)
J E
dJ d
E
dE dE

1
1
d
dJ
dE
dE
E

1
d
dE
E

Plot current density vs E-field according to equation (3)

According to Ridley-Watkins-Hilsum thoery, the band structure of a
semiconductor must satisfy 3 criteria in order to exhibit negative
resistance.
1. The energy difference between two valleys must be several times
larger than the thermal energy (KT~0.0259eV)
2. The energy difference between the valleys must be smaller than
the gap energy between the valence and the conduction band.
3. Electron in lower valley must have a higher mobility and smaller
effective mass than that of in upper valley

Above Eth, A domain will start to form and drift with the carrier stream.
When E increases, drift velocity decreases and diode exhibits negative
resistance
If more Vin is applied, the domain will increase and the current will decrease.
A domain will not disappear before reaching the anode unless Vin is dropped
below Vth
The formation of a new domain can be prevented by decreasing the E field
below Eth

Gunn-Oscillation (High field domain)
Modes of operation
1. Gunn Oscillation: fL=10
7
cm/s
noL = 10
12
cm/s
2

Device is unstable because of the
cyclic formation of either the
accumulation layer or high field
domain

2. Stable Amplification: fL=10
7
cm/s
noL =10
11
cm/s
2
to 10
12
cm/s
2

3. LSA Oscillation: fL >10
7
cm/s
Quotient of doping divided by
frequency is between 2 x 10
4
to
2 x 10
5.

4. Bias-circuit oscillation mode: This
mode occurs only when there is
either Gunn or LSA oscillation, and it
is usually at the region where the
product of frequency times length is
too small in the figure to appear.

The Operation in Resonant Circuit
1. Stable domain mode(Without resonant circuit)
>
th
(Low efficiency less than 10%)

2. Resonant Gunn mode
>
s
(Low efficiency less than 10%)

1
t
resonant f

s v
f
L
s v
f
L
1
resona
t
nt f

3. Delayed mode :
-

(High efficiency up to 20%)
- There is an ohmic currents higher than domain currents.
- f
osc
is determined by the resonant circuit

4. Quenched mode
-

(Efficiency up to 13%)
- The domain can be quenched before it is collected
- So that, f
osc
is determined by the resonant circuit
t
t
Positive resistance region
The sustaining drift velocity
LSA mode(Limited Space charge Accumulation)

(The most efficiency mode more than 20%)
The frequency is so high that domains have insufficient time to form while
the field is above threshold. As a results, domains do not form.

f
osc
determined by the resonant circuits, is much higher than the transit time
frequency
t
Stable amplification
mode
When noL < 10
12
/cm
2
the
device exhibits amplification
at the transit time frequency
rather than spontaneous
oscillation.
This situation occurs because
the negative conductance is
utilized without domain
formation.
There are too few carriers for
domain formation within the
transit time. Therefore
amplification of signals near
the transit time frequency can
be accomplished.
Structure
Fabrication
1.25e17cm
-3
1e16cm
-3
Active region : 5e15cm
-3
Dead zone

Distance from the cathode

The doping-notch

Doping density

Electric field

T=0
T=3ps
T=5.6ps
T=10ps
GUNN DIODE P-N JUNCTION DIODE
Construction
It only consists of N type
semiconductor material
It has N+ n N+ material
No depletion region is
formed

It has P type,N type and
depletion region between
these materials
It consists of P & N type
semiconductor material

GUNN DIODE P-N JUNCTION DIODE
GUNN DIODE

P-N JUNCTION DIODE

GUNN DIODE

P-N JUNCTION DIODE
I-V CHARACTERISTICS
OF GUNN DIODE
I-V CHARACTERISTICS
OF P-N JUNCTION DIODE
A Gunn diode can be used to amplify signals because of the
apparent "negative resistance". Gunn diodes are commonly
used as a source of high frequency and high power signals
Gunn diode oscillators have been used in military, commercial
and industrial applications

Anti-lock brakes
Sensors for monitoring the flow of traffic
Pedestrian safety systems
Distance traveled recorders
Traffic signal controllers
Automatic traffic gates

Low noise, High frequency operation and Medium RF Power
Summary

Gunn diode is mainly used as a local oscillator covering the microwave
frequency range of 1 to 100GHz
By means of the transferred electron mechanism, the negative resistance
characteristic can be obtained. This mechanism provides low noise, high
frequency operation and Medium RF Power characteristic
The LSA mode is particularly suitable for microwave power generation
because of its relatively high efficiency and operating frequency

Solid State Electronic Devices, 3
rd
Ed, Streetman
Microwave device & Circuits 3
rd
Ed, Samuel Y.Liao
Reference

Submitted By:-Nisar Ahmed Khan Roll No. - 00510100613 M.Tech. (RF & Microwave Engg.)

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Rate of change of the valley curves slope

Electron density in lower/upper valley

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