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    Monte Carlo Simulation in Statistical Design Kit

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    Vinayaka Hm
    Monte carlo simulation VLSI

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    Monte Carlo Simulation in Statistical Design Kit

    Uploaded by

    Vinayaka Hm
    769 views40 pages
    Monte carlo simulation VLSI

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    Monte carlo simulation

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    Monte carlo simulation VLSI

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    769 views40 pages

    Monte Carlo Simulation in Statistical Design Kit

    Uploaded by

    Vinayaka Hm
    Monte carlo simulation VLSI

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 40

    Monte Carlo Simulation in Statistical Design Kit

    Monte Carlo simulation in statistical design kit

    Overview
    1. Monte Carlo Simulation 2. Practical demonstration in Cadence 3. Simulation and Measurement

    Monte Carlo simulation in statistical design kit

    Monte Carlo Simulation


    ... allows the random variation of - process parameters - mismatch parameters - process & mismatch parameters

    Monte Carlo simulation in statistical design kit

    Monte Carlo process simulation


    Wafer production will always show some variation of technological parameters The MC process simulation is the adequate tool to give an early estimation how it will affect the circuits function.

    Monte Carlo simulation in statistical design kit

    Monte Carlo process simulation


    ... dw_rpyhl_skew rcs_rpyhl_skew rsh_rpyhl_skew a_wc_skew_nsic a_be0_skew_nsic r_nsu_skew_nsic r_nbl_skew_nsic r_ncx_skew_nsic r_nci_skew_nsic r_wb_skew_nsic r_jbei_skew_nsi c r_nbei_skew_nsi c ...

    For each simulation run a new random set of process parameters is generated and is valid for all active and passive components in the circuit

    Monte Carlo simulation in statistical design kit

    Monte Carlo mismatch simulation


    Even optimum layout cannot completely avoid mismatch between components. The MC mismatch analysis gives insight in the effect of these slight variations.

    Monte Carlo simulation in statistical design kit

    Monte Carlo mismatch simulation


    For each device an individual mismatch random variable is generated and is valid only for a single run.

    The mismatch property can be set globally or for selected devices only.

    Monte Carlo simulation in statistical design kit

    Monte Carlo process & mismatch simulation


    In addition to the global random process parameter set each device gets an individual mismatch random variable. This combined simulation will give an estimation of a real wafer fabrication

    Monte Carlo simulation in statistical design kit

    Monte Carlo Tool Demonstration

    Monte Carlo simulation in statistical design kit

    Testbench

    Monte Carlo simulation in statistical design kit

    Operational Amplifier V1

    Monte Carlo simulation in statistical design kit

    Opamp V1 Mismatch and Process Variation

    Monte Carlo simulation in statistical design kit

    Sweep of Process Parameter Model Setup

    Monte Carlo simulation in statistical design kit

    Sweep of Process Parameter Model Setup

    Monte Carlo simulation in statistical design kit

    Variation of Process Parameter with Corner Tool

    Monte Carlo simulation in statistical design kit

    Variation of Process Parameter with Corner Tool

    Monte Carlo simulation in statistical design kit

    Sweep of Process Parameter

    Monte Carlo simulation in statistical design kit

    Opamp V1 Mismatch and Process Variation

    Monte Carlo simulation in statistical design kit

    Circuit optimisation

    Step 1: Add base current compensation

    Monte Carlo simulation in statistical design kit

    Circuit optimisation

    Step 1

    Monte Carlo simulation in statistical design kit

    Circuit optimisation

    Step 2: Add buffer stage

    Monte Carlo simulation in statistical design kit

    Circuit optimisation

    Step 2

    Monte Carlo simulation in statistical design kit

    Circuit optimisation

    Step 3: Adjust bias current and add cascode stage

    Monte Carlo simulation in statistical design kit

    Circuit optimisation

    Step 3

    Monte Carlo simulation in statistical design kit

    Improvement in DC-Offset

    Monte Carlo simulation in statistical design kit

    Overview
    DC-Offset N = 1000 simulation runs

    Simulation MM before optimisation after optimisation 3.82 1.16 Proc 22.77 0.09 MM&Proc 24.94mV 1.16mV

    Monte Carlo simulation in statistical design kit

    Identify critical components and process parameters


    - Run sensitivity analysis
    - MC Simulation with individual mismatch enable

    - Perform correlation check after process simulation in Monte Carlo Tool


    - sweep of single process parameters

    Monte Carlo simulation in statistical design kit

    Rules of thumb for Design


    Wide spread at Mismatch Simulation: -> Increase area factor of critical components

    Wide spread at Process Simulation: -> Check circuit topology e.g.: - add base current compensation - add cascode or buffer stage

    Monte Carlo simulation in statistical design kit

    Simulation and Measurement

    Monte Carlo simulation in statistical design kit

    Circuit Topology

    Monte Carlo simulation in statistical design kit

    First approach to DC-Offset compensation with dummy stage

    Monte Carlo simulation in statistical design kit

    Results from first Silicon


    First silicon of a test circuit did show a wide spreading of DC offsets especially in high gain mode. The yield was unacceptable low :

    DC offset voltages Specification: +/- 20mV First silicon : ~ 40mV (1-sigma)

    Monte Carlo simulation in statistical design kit

    Typical DC Offset Distribution (Wafer probing)

    1-Sigma 38.7mV

    Monte Carlo simulation in statistical design kit

    Resimulation:

    Mismatch & Process Variation

    Monte Carlo simulation in statistical design kit

    Redesign
    Evaluation of the circuit without statistical models is possible - but takes a lot of time. Monte Carlo Analysis with new statistical design kit provides a fast insight in the circuits behaviour at mismatch and process variation. The conformity of measurement and simulation is rather good

    Monte Carlo simulation in statistical design kit

    Circuit improvements
    - enlarge area factor at critical elements - add base current compensation - decrease current of differential amplifier to limit influence of beta variation - limit influence of early effect by cascode stages and dummy amps - revise the complete channel topology and gain chain (omit dummy OP stage)

    Monte Carlo simulation in statistical design kit

    Redesign without dummy stage but OP design improved

    Monte Carlo simulation in statistical design kit

    New Design:

    Mismatch & Process Variation

    Monte Carlo simulation in statistical design kit

    Overview
    DC Offset @ Opamp output (300 simulation runs)

    Simulation MM First Design 13.6 New Design 6.3 Proc 32.9 0.8 MM&Proc 32.9mV 5.9mV

    Measurement Wafer 38.7mV ?

    Monte Carlo simulation in statistical design kit

    More Information
    [1] Kraus, W. : PCM- and Physics-Based Statistical BJT Modeling Using HICUM and TRADICA, 6th HICUM Workshop, 2006

    [2]

    Schrter, M., Wittkopf, H., Kraus, W. : Statistical modeling of high-frequency bipolar transistors, Proc. BCTM, pp 54 - 61, 2005

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