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Verilog-A Mos Model

This document presents a model for threshold voltage-based modeling of MOSFET devices. It discusses how threshold voltage determines three regions of operation: weak inversion, transition, and strong inversion. Standard and non-uniform doping models for threshold voltage are described through equations. Effects like drain-induced barrier lowering and mobility are also accounted for through additional equations. The document derives current equations valid for all regions of operation and discusses extensions to model channel length modulation, source-drain resistance, and impact ionization current. Simulation results are presented to validate properties like DIBL effect and continuity of higher-order derivatives.

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Avirup Dasgupta
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© Attribution Non-Commercial (BY-NC)
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307 views

Verilog-A Mos Model

This document presents a model for threshold voltage-based modeling of MOSFET devices. It discusses how threshold voltage determines three regions of operation: weak inversion, transition, and strong inversion. Standard and non-uniform doping models for threshold voltage are described through equations. Effects like drain-induced barrier lowering and mobility are also accounted for through additional equations. The document derives current equations valid for all regions of operation and discusses extensions to model channel length modulation, source-drain resistance, and impact ionization current. Simulation results are presented to validate properties like DIBL effect and continuity of higher-order derivatives.

Uploaded by

Avirup Dasgupta
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Course: Integrated Circuit Technology

Threshold Voltage Based Modelling

By:
AVIRUP DASGUPTA (Y9227159) VAIBHAV GOYAL (Y9635) RAHUL JHA (Y9450)

Introduction
Threshold voltage is basically the value of gate-

source voltage to turn on the transistor. Threshold voltage is very important parameter in the modeling of MOSFET device. Depending on Threshold voltage, the MOSFET operation can be divided into three major regions:
Weak Inversion Region: Gate voltage less than threshold

voltage. Here inversion charge density is less than doping concentration Transition Region: Gate voltage comparable to Threshold voltage. Strong Inversion Region: Gate voltage higher compared to threshold voltage. Inversion charge density higher than doping concentration.

Standard Model
The threshold voltage is governed by the

following equation

Vth : Threshold voltage, VFB : Flatband Volatge


,,,,,,,,,,,,,,,,,,,,,,,

However the standard model applies only to long uniformly doped channel

Vertical Non-Uniform Doping


More concentration near Si/SiO2 interface and

decreases throughout the interface Modeling governed by following equations:

Where gamma is the body effect coefficient for doping, Vbm is maximum body bias and Vbx is body bias for depletion width = Xt such that

Other Effects
DIBL Effects: Drain voltage control over channel

because of high drain voltage. Modeling is governed by:


where KDIBL is given by

Mobility Model

Effective Vgs-teff and Vdseff


Current equation is different in three regions

(mentioned earlier). Hence single smooth equations of Vgs-teff and Vdseff have been developed that work perfectly in all three regions.

Here delta is the smoothening factor.

Current Calculation
Having smoothened equations for Vgsteff and Vdseff

, we now derive the current equation valid for all the regions:

Channel Length Modulation and DIBL Effect


The modified equations once we include channel length

modulation and DIBL effect can be given as

Voltage Saturation

Source-Drain Resistance

Impact Ionization Current

Charge Calculations
The inversion charge density from a distance x from the source

can be calculated by the following formula:


Hence Total Inversion Charge is the integration from 0 to Length

of the channel which gives:

In Accumulation region: Qacc= Cox(Vgb - Vfb) = QG In Depletion region: Qg = Qdep In Inversion region: Qg= -QI Charge equation valid in all regions should be of form:

max(min(Qacc, Qdep),QI) in max and min functions can be considered as below:

Simulation Results
Ids versus Vds plot for different Vg
500

400

300

200

100

0 2.5

0.5

1.5

Simulation Results
Ids versus Vgs on semilog axis Plot. DIBL effect

can be seen
-2.5 -5.0

-7.5

-10.0

-12.5

-15.0

0 2.5

0.5

1.5

Simulation Results
Impact Ionisation Current versus Vg on semilog axis for different

Vds.
2.5 0

-2.5

-5.0

-7.5

-10.0

-12.5 0 2.5

0.5

1.5

Simulation Results
3rd order derivatives are continuous
35.0 30.0 25.0 20.0 15.0

10.0
5.0 0 -5.0 0 2.5 0.5 1 1.5 2

THANK YOU

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