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Conduction in Semiconductors

This document discusses electrical conduction in semiconductors. It describes how electrons and holes drift in an applied electric field, leading to a drift current. The drift velocity depends on factors like the carrier type and applied field. Mobility is defined as the drift velocity per unit field. Conductivity is related to carrier concentration, mobility, and drift current density through Ohm's law. Intrinsic semiconductors conduct due to the thermal generation of equal numbers of electrons and holes. Conductivity increases with temperature as intrinsic carrier concentration rises exponentially with temperature.

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Sahil Ahuja
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700 views20 pages

Conduction in Semiconductors

This document discusses electrical conduction in semiconductors. It describes how electrons and holes drift in an applied electric field, leading to a drift current. The drift velocity depends on factors like the carrier type and applied field. Mobility is defined as the drift velocity per unit field. Conductivity is related to carrier concentration, mobility, and drift current density through Ohm's law. Intrinsic semiconductors conduct due to the thermal generation of equal numbers of electrons and holes. Conductivity increases with temperature as intrinsic carrier concentration rises exponentially with temperature.

Uploaded by

Sahil Ahuja
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Conduction in Semiconductors

2 July 2013

Conduction in Semiconductors

Electrical Conduction in Good Conductors

2 July 2013

Conduction in Semiconductors

Drift Current
In addition to the random motion, the electrons drift towards the positive terminal. This drift of the charge carriers results in an electric current, called drift current.

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Conduction in Semiconductors

Drift Velocity
It is the average velocity of charge carriers in a definite direction under the influence of electric field. Its value depends upon
1. The nature of charge carriers. 2. The applied electric field.

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Conduction in Semiconductors

Mobility
The constant is called mobility. It can be defined as the drift velocity (in m/s) per unit applied field (in V/m). Thus,

2 July 2013

Conduction in Semiconductors

Conductivity

2 July 2013

Conduction in Semiconductors

Let n be the concentration of charge carriers. The time to cross the length is t = L / vd The drift current is given as

The current Density is

2 July 2013

Conduction in Semiconductors

Putting = qn, we get J = E This is simply Ohms Law, put in another form. The constant is called Conductivity. Conductivity is the inverse of resistivity, = 1 / (S/m)

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Conduction in Semiconductors

Conduction in Intrinsic Semiconductors

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Conduction in Semiconductors

Drift of electrons and holes in an external field


The electrons in the conduction band and the holes in the valence band move in a random fashion within a crystal due to their thermal energy. When an external voltage is applied to the semiconductor, a drift velocity is superimposed on the random thermal motion of the electrons and holes. The drift of the electrons in the conduction band and that of the holes in the valence band produce an electric current.
2 July 2013 Conduction in Semiconductors 10

The electrons move towards the positive electrode and the holes towards the negative electrode. Conventional current flows in semiconductors from the positive electrode to the negative electrode. When the charge on an electron is same as the charge on a hole, why is the electrondrift current In is greater than the hole-drift current Ip ?
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Conductivity of Intrinsic Semiconductors

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Conduction in Semiconductors

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Charge density = qn Qn = (qn)(Avn)

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Total Current,

But

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Applying Ohms Law,

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Since in an intrinsic semiconductor, n = p = ni,

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Intrinsic Concentration
With increasing temperature, the density of electron-hole pairs increases and correspondingly conductivity increases. It is found that intrinsic concentration ni varies with T as,

EG 0 ni A0T exp kT
2 3

EG0 k A0
2 July 2013

= Energy gap at 0 K in electron volts = Boltzman constant in eV/K = a constant independent of T.


Conduction in Semiconductors 17

In case Germanium, 1 atom in about 109 contributes a free electron (and also a hole). In case Silicon, 1 atom in about 1012 contributes a free electron (and also a hole).

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Energy Gap or Band Gap


The forbidden energy gap in semiconductors depends upon temperature. Experimentally it has been found that, For Germanium, Eg = 0.785 2.23 X 10-4T At 300 K, Eg = 0.72 eV. For Silicon, Eg = 1.21 - 3.60 X 10-4T At 300 K, Eg = 1.12 eV.
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Review
Electrical Conduction in Good Conductors Drift Current. Drift Velocity. Mobility. Conductivity. Conductivity of Intrinsic Semiconductors . Intrinsic Concentration.

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