__________ _________________________________________________________________________ Objectives: 1. To trace the circuit from given experiment board. 2.

To plot the forward and reverse V-I(static) characteristics of a PN Junction silicon diode. 3. To calculate the forward static and dynamic resistance of the diode at a suitable point. 4. To find out Q-point using DC load line. Apparatus: Experimental board, Regulated DC power supply(0-30V), milliammeter(0-1A,0-30mA,0-100uA), voltmeter(0-10V). Circuit Diagram:

(Forward bias) Figure No. 1 (a)

(Reverse bias) Figure No.1(b)

(load line analysis) Figure No. 2

Theory: A p-n junction diode is formed by joining a p-type and n-type semiconductor material. It is a two terminal, uni-junction, uni-directional device. If the positive terminal of the supply is connected to anode (p-region) and negative terminal is connected to cathode (n-region), the diode is said to be forward biased. If the connections are reversed, the diode is said to be reverse biased. Unbiased diode: When the diode is unbiased, diffusion of carriers take place because the concentration of hole is more in p-region and less in n-region and concentration of electron is more in n-region and less in p-region. The difference of potential across this region i.e. barrier potential is 0.6 V to 0.7 V for Silicon diode and 0.2 V to 0.3 V for Germanium diode. Forward biased diode: When the diode is forward biased and the applied bias is less than barrier potential, no current flows. As the applied potential increases, the charge carriers gain sufficient energy to cross barrier potential and enter the other region. The holes enter the n-region and the electrons enter the pregion, crossing the p-n junction. This crossing of charge carriers results in a flow of current. This is called drift current. Reverse biased diode: When the diode is reverse biased the majority charge carriers are attracted towards the terminals of applied potential away from the p-n junction. It results in widening of the depletion region. Under this situation, no current flows across the p-n junction. But, there will be a very small current across the p-n junction due to the thermally generated minority carriers, called reverse saturation current. It is independent of applied potential and increases with temperature. When the applied reverse voltage increased beyond limit, it results in break down. During break down, the diode current increases tremendously for a particular voltage. The circuit diagram to plot the VI characteristics of a pn junction diode is shown. Applying a positive potential to the anode and a negative potential to the cathode of the pn junction diode establishes a forward bias condition on the diode. As the applied potential is increased the depletion region width decrease and conduction of electron increase. In general the characteristics of the semiconductor diode can be defined by the equation

. Where IS = reverse saturation current k=11600/ with =1 for Ge and 2 for Si.

TK=TC+273 TK = Temperature in Kelvin TC = Temperature in Centigrade VD = Applied potential ID = Diode current For positive values of VD, ID is positive and increases exponentially. At VD=0, ID is also zero (ref: equation). For negative values of VD,

which is a horizontal line. This explains the VI characteristics of pn junction diode. Procedure: 1. Note the type of the diodes connected in the experimental board.
2. Connect the milliammeter and voltmeter as shown in figure 1(a).

3. Set the DC source voltage for different values, note down corresponding voltage across diode and current passing though diode. Tabulate the observations. 4. Repeat same process for reverse bias connection(figure 2(b)). 5. Draw the graph between voltage and current, taking suitable scales on x-axis and y-axis. 6. Take a suitable operating point and calculate static and dynamic resistance of the diode.
7. For load line analysis, connect figure 2.

E=Vd+Id.R On x-axis, Id=0(say point A=E) and on y axis,Vd=0V(say point B=E/R) 8. Connect point A and B. The intersection of DC load line with VI characteristics is called Q-point(Vdq,Idq).

Observations:
1. Type number of the diode=1N4007 Si

2. VI characteristics: Forward Bias SR NO. Source voltage Voltage across diode Vd (volt) Current passing through diode Id (mA) 0.0 0.0 0.0 0.0 0.05 0.42 1.44 3.12 5.18 7.68 8.39 10.04 13.45 15.94 17.97 24.1 24.9 28.6 30.1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 SR NO.

Reverse Bias Source Voltage Voltage across diode Vd (volt) Current passing through diode Id (uA)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8

0.0 0.18 0.26 0.34 0.44 0.52 0.58 0.62 0.64 0.65 0.67 0.67 0.69 0.70 0.70 0.71 0.72 0.73 0.73

SR NO.

Source voltage

Voltage across diode Vd (volt)

Current passing through diode Id (mA) 34.7 36.2 39.0 41.8 46.4 54.2 58.8 62.2 67.4 117.1 147.6 147.6 198.0 230.0 250.0 380.0

SR NO.

Source Voltage

Voltage across diode Vd (volt)

Current passing through diode Id (uA)

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

1.9 2.0 2.1 2.2 2.4 2.7 2.8 2.9 3.1 5.0 6.0 7.0 8.0 9.0 10.0 15.0

0.74 0.74 0.75 0.75 0.75 0.76 0.772 0.775 0.780 0.826 0.867 0.894 0.913 0.895 0.925 1.0

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

10.0

3. Information from datasheet: SR NO 1 2 3 4 Voltage and current rating Maximum forward current rating IF Maximum forward voltage rating Maximum peak inverse voltage rating Reverse saturation current Is Datasheet value 1A 1V 1000V 5uA Practical Value 350mA 1V 1000V 3uA at V=

Calculations:
1. Static forward resistance Rf=V/I=____________ 2. Dynamic forward resistance rd=V/I =____________

3. Location of Q-point: Vdq=_______, Idq=________. Questions: Note: Use separate pages for answers: 1 Define cut in voltage. What is the value of cut in voltage for germanium diode and silicon diode? In this experiment what is a value of cut in voltage? 2.What is forward resistance of diode?. Using multimeter find out this value. 3. sketch VI characteristics of diode(1N4007) at T=50c and T=100c. Hint: Use schottky equation. Conclusion: ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------Signature of staff member with Date: